METHODS AND APAPRATUS FOR MANUALLY SUSPENDING INTRATHORACIC IMPEDANCE FLUID STATUS MEASUREMENTS
    31.
    发明申请
    METHODS AND APAPRATUS FOR MANUALLY SUSPENDING INTRATHORACIC IMPEDANCE FLUID STATUS MEASUREMENTS 审中-公开
    用于手动停止静脉内阻滞流体状态测量的方法和APAPRATUS

    公开(公告)号:US20120303085A1

    公开(公告)日:2012-11-29

    申请号:US13570858

    申请日:2012-08-09

    IPC分类号: A61N1/365

    摘要: The capability to suspend a patient alert relating to a monitored physiologic parameters addresses a need to selectively shut off a patient-alert signal or signals during the time a patient is being treated for an excursion in the parameter. Of course, in general a signal call attention to a patient's a potentially deleterious status or condition for which they should seek medical attention. Once a chronically-implanted monitoring device has detected or provided information about the parameter relative to a desired value, trend, or range and a clinician has been notified and intervened the alert signal is temporarily disabled for a predetermined period. That is, once the notification occurs and alert has served its purpose, the alert mechanism is selectively deactivated while the patient ostensibly begins to gradually correct the monitored physiologic parameter under a caregiver's direction and control. After which time, the alert will reactivate.

    摘要翻译: 暂停与所监测的生理参数相关的患者警报的能力解决了在患者被治疗参数期间偏移的时间期间选择性地切断病人警报信号或信号的需要。 当然,一般来说,一个信号会引起对患者的一个潜在的有害的状态或状况的关注,他们应该寻求医疗护理。 一旦长期植入的监测装置已经相对于期望值,趋势或范围已经检测或提供了关于参数的信息,并且已通知临床医生并且中介了警报信号暂时禁用预定时间段。 也就是说,一旦通知发生并且警报已经达到其目的,则警告机制被选择性地去激活,同时患者表面上开始逐渐校正受照顾者的方向和控制下的监测的生理参数。 之后,警报将重新启动。

    REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF
    32.
    发明申请
    REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF 有权
    调节性T细胞介质蛋白及其用途

    公开(公告)号:US20120301484A1

    公开(公告)日:2012-11-29

    申请号:US13546098

    申请日:2012-07-11

    IPC分类号: C07K16/28 A61K39/395

    摘要: The present invention relates to novel regulatory T cell proteins. One protein, designated PD-L3, resembles members of the PD-L1 family, and co-stimulates αCD3 proliferation of T cells in vitro. A second, TNF-like, protein has also been identified as being upregulated upon αCD3/αGITR stimulation. This protein has been designated Treg-sTNF. Proteins, antibodies, activated T cells and methods for using the same are disclosed.In particular methods of using these proteins and compounds, preferably antibodies, which bind or modulate (agonize or antagonize) the activity of these proteins, as immune modulators and for the treatment of cancer, autoimmune disease, allergy, infection and inflammatory conditions, e.g. multiple sclerosis is disclosed

    摘要翻译: 本发明涉及新型调节性T细胞蛋白。 称为PD-L3的一种蛋白质类似于PD-L1家族的成员,并且在体外共同刺激T细胞的αCD3增殖。 第二种TNF样蛋白也被鉴定为在αCD3/αGITR刺激下上调。 该蛋白质已被命名为Treg-sTNF。 公开了蛋白质,抗体,活化的T细胞和使用它们的方法。 特别是使用这些蛋白质和化合物(优选抗体)的方法,其结合或调节(激动或拮抗)这些蛋白质的活性,作为免疫调节剂和用于治疗癌症,自身免疫疾病,变态反应,感染和炎性病症,例如, 公开了多发性硬化

    METHOD AND APPARATUS FOR IMPROVING POWER OUTPUT EFFICIENCY OF LINE DRIVER
    33.
    发明申请
    METHOD AND APPARATUS FOR IMPROVING POWER OUTPUT EFFICIENCY OF LINE DRIVER 有权
    提高线路驱动器功率输出效率的方法和装置

    公开(公告)号:US20120294438A1

    公开(公告)日:2012-11-22

    申请号:US13565532

    申请日:2012-08-02

    IPC分类号: H04M9/00

    CPC分类号: H04M11/062

    摘要: A method and an apparatus for improving power output efficiency of a line driver are disclosed. The method includes: obtaining a current working parameter of an xDSL subscriber board, where the current working parameter includes at least one of a working mode configured on a subscriber port of the xDSL subscriber board and current output power of the subscriber port; and determining, according to the current working parameter, a control signal for a line driver in the xDSL subscriber board and outputting the control signal.

    摘要翻译: 公开了一种用于提高线路驱动器的功率输出效率的方法和装置。 该方法包括:获取xDSL用户板的当前工作参数,其中当前工作参数包括在xDSL用户板的用户端口上配置的工作模式和用户端口的当前输出功率中的至少一个; 以及根据当前工作参数确定xDSL用户板中的线路驱动器的控制信号并输出​​该控制信号。

    SYSTEM AND METHOD OF INTEGRATING WIND POWER AND TIDAL ENERGY
    35.
    发明申请
    SYSTEM AND METHOD OF INTEGRATING WIND POWER AND TIDAL ENERGY 有权
    综合风力发电系统与方法

    公开(公告)号:US20120139350A1

    公开(公告)日:2012-06-07

    申请号:US13312132

    申请日:2011-12-06

    申请人: Li Wang

    发明人: Li Wang

    IPC分类号: H02J1/12

    摘要: A system integrating a tidal power generation device and a wind power generation device and a method thereof are provided. The system includes a wind power generation device, a tidal power generation device and an integration device. The wind power generation device generates a first voltage, the tidal power generation device generates a second voltage, and the integration device integrates the first and the second voltages for a further use.

    摘要翻译: 提供集潮汐发电装置和风力发电装置的系统及其方法。 该系统包括风力发电装置,潮汐发电装置和集成装置。 风力发电装置产生第一电压,潮汐发电装置产生第二电压,积分装置对第一电压和第二电压进行积分以进一步使用。

    METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR
    37.
    发明申请
    METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR 审中-公开
    使用硅烷作为前驱体制备N型半导体材料的方法

    公开(公告)号:US20110298005A1

    公开(公告)日:2011-12-08

    申请号:US12680261

    申请日:2007-10-12

    IPC分类号: H01L33/02 H01L21/20

    摘要: A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above the Si substrate using silane gas (SiH4) as a precursor at a flow rate set to a first predetermined value (210). Subsequently, the SiH4 flow rate is reduced to a second predetermined value during the fabrication of the n-type layer (220). The method also comprises forming a multi-quantum-well active region above the n-type layer. In addition, the flow rate is reduced over a predetermined period of time, and the second predetermined value is reached at a predetermined, sufficiently small distance from the interface between the n-type layer and the active region (230).

    摘要翻译: 制造III-V族氮化物结构的方法包括制造生长Si衬底,然后使用硅烷气体(SiH 4)作为前体以流量设定在Si衬底上沉积III-V族III型层 到第一预定值(210)。 随后,在制造n型层(220)期间,将SiH 4流量减小到第二预定值。 该方法还包括在n型层上形成多量子阱有源区。 此外,在预定时间段内减小流量,并且在与n型层和有源区域(230)之间的界面预定的足够小的距离处达到第二预定值。

    AIR PURIFICATION APPARATUS AND METHOD OF FORMING THE SAME
    38.
    发明申请
    AIR PURIFICATION APPARATUS AND METHOD OF FORMING THE SAME 有权
    空气净化装置及其形成方法

    公开(公告)号:US20110142725A1

    公开(公告)日:2011-06-16

    申请号:US12635523

    申请日:2009-12-10

    申请人: Xuanbin Liu Li Wang

    发明人: Xuanbin Liu Li Wang

    CPC分类号: A61L9/205 A61L2209/14

    摘要: A photocatalytic air purification apparatus and method of fabricating the same. The apparatus may be configured to include a light source surrounded by one or more porous plate substrates. An inner and outer surface of each plate substrate may be coated with a photocatalyst material. The light source may be placed in a direction parallel to the direction of an air flow and in optical proximity to the plate substrates in order to activate the photocatalyst coating. The photocatalyst coating associated with the plate substrates may be activated by absorbing light with a wavelength shorter than a cut-off activation wavelength from the light source in order to capture and decompose organic components and airborne pollutants in the air by the activated photocatalyst.

    摘要翻译: 一种光催化空气净化装置及其制造方法。 该装置可以被配置为包括由一个或多个多孔板基板包围的光源。 每个板基板的内表面和外表面可以涂覆有光催化剂材料。 光源可以沿平行于空气流的方向的方向放置,并且光​​学接近板基板,以激活光催化剂涂层。 可以通过从光源吸收波长短于截止激活波长的光来激活与板基板相关联的光催化剂涂层,以通过活化的光催化剂捕获和分解空气中的有机组分和空气传播的污染物。

    METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE
    39.
    发明申请
    METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE 有权
    用金属基材制造金属发光二极管的方法

    公开(公告)号:US20110140080A1

    公开(公告)日:2011-06-16

    申请号:US13059140

    申请日:2008-08-19

    摘要: One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.

    摘要翻译: 本发明的一个实施例提供一种制造发光二极管的方法。 该方法包括在生长衬底上蚀刻凹槽,从而在生长衬底上形成台面。 该方法还包括在每个台面上制造包含p型层,多量子阱层和n型层的铟镓铝氮化物(InGaAlN)多层结构。 此外,该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。 此外,该方法包括去除生长衬底。 此外,该方法包括在InGaAlN多层结构的两侧形成电极,从而形成垂直电极结构。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER
    40.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER 审中-公开
    具有P型层中钝化的半导体发光器件

    公开(公告)号:US20110133159A1

    公开(公告)日:2011-06-09

    申请号:US13059400

    申请日:2008-08-19

    IPC分类号: H01L33/06 H01L33/44

    摘要: A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.

    摘要翻译: 半导体发光器件包括衬底,第一掺杂半导体层,位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱(MQW)有源层 。 该器件还包括耦合到第一掺杂半导体层的第一电极,其中部分第一掺杂半导体层被钝化,并且其中第一掺杂半导体层的钝化部分使第一电极与第一掺杂半导体层的边缘基本绝缘 层,从而减少表面复合。 该器件还包括耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层,MQW有源层和第二掺杂半导体层的水平表面的一部分的侧壁的钝化层, 不被第二电极覆盖。