公开(公告)号：US20100273405A1

公开(公告)日：2010-10-28

申请号：US12747225

申请日：2009-02-09

申请人： Makoto Fukushima ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Osamu Nabeya ,  Tomoshi Inoue

发明人： Makoto Fukushima ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Osamu Nabeya ,  Tomoshi Inoue

IPC分类号： B24B7/20 ,  B24B41/06 ,  B24B55/02

CPC分类号： B24B37/30

摘要： A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

摘要翻译： 抛光装置用于将半导体晶片等基板研磨成平面镜面。 抛光装置包括具有抛光面（101a）的抛光台（100），被配置为将基板保持并压靠在抛光表面（101a）上的顶环体（2），以及设置在抛光表面 所述顶环体（2）的外周部分构造成按压所述抛光表面（101a）。 用于在衬底抛光期间接收从衬底施加到保持环（3）的侧向力的支点位于衬底的中心部分的上方。

公开(公告)号：US07578920B2

公开(公告)日：2009-08-25

申请号：US10948320

申请日：2004-09-24

申请人： Ikutaro Noji ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Kazuto Hirokawa ,  Itsuki Kobata

发明人： Ikutaro Noji ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Kazuto Hirokawa ,  Itsuki Kobata

IPC分类号： C25D21/12 ,  C25F3/02

CPC分类号： C25F7/00

摘要： An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

摘要翻译： 电解处理装置可以以高精度和相对简单的结构稳定地检测电解处理的终点。 电解处理装置包括：处理电极，其能够接近或与处理对象接触; 用于向处理对象供电的馈电电极; 流体供应部分，用于在处理对象与处理电极和馈送电极中的至少一个之间提供流体; 用于在处理电极和馈电电极之间施加电压的处理电源; 驱动部，其用于使处理对象与所述处理电极和所述馈送电极中的至少一个相对移动; 以及用于从涡流损耗的变化中检测加工对象的厚度的涡流传感器。 传感器设置成不与来自处理电极和/或馈电电极的绝缘体接触（或单独地）接触。

公开(公告)号：US07569135B2

公开(公告)日：2009-08-04

申请号：US11723934

申请日：2007-03-22

申请人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

发明人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

IPC分类号： C25F3/16 ,  B23H5/06

CPC分类号： C25F7/00 ,  B23H3/00 ,  B23H3/04 ,  B23H3/08 ,  B23H5/08 ,  B24B37/04 ,  C25F3/00 ,  C25F5/00 ,  H01L21/32115 ,  H01L21/3212

摘要： The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.

摘要翻译： 本发明通过使用去离子水，超纯水等的电解处理通过化学机械抛光来代替基板处理的全部或一部分。 电解处理设备包括：化学机械抛光部分，用于对基材的表面进行化学机械抛光; 具有处理电极和供电电极的电解处理部分，并且还具有设置在基板和处理电极之间或者基板和供电电极之间的至少一个的离子交换器，用于在存在的工件的表面进行电解处理 通过在处理电极和馈电电极之间施加电压的解决方案; 以及能够在所述化学机械抛光部和所述处理电极部之间自由移动的顶环。

公开(公告)号：US20090111362A1

公开(公告)日：2009-04-30

申请号：US12285941

申请日：2008-10-16

申请人： Osamu Nabeya ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Makoto Fukushima

发明人： Osamu Nabeya ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Makoto Fukushima

IPC分类号： B24B7/00

CPC分类号： B24B37/32

摘要： A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a top ring body configured to hold and press a substrate against the polishing surface, a retainer ring provided at an outer peripheral portion of the top ring body and configured to press the polishing surface, and a retainer ring guide fixed to the top ring body and configured to be brought into sliding contact with a ring member of the retainer ring to guide a movement of said ring member. Either one of sliding contact surfaces of the ring member and the retainer ring guide which are brought into sliding contact with each other comprises a low friction material.

摘要翻译： 抛光装置用于将半导体晶片等基板研磨成平面镜面。 抛光装置包括具有研磨面的研磨台，配置为将基板保持并压靠在研磨面上的顶环体，设置在顶环体的外周部并构造成按压抛光面的保持环， 以及保持环导向件，其固定到所述顶环主体并且被构造成与所述保持环的环形构件滑动接触以引导所述环构件的运动。 彼此滑动接触的环构件和保持器环导向件的滑动接触表面中的任一个包括低摩擦材料。

公开(公告)号：US07476303B2

公开(公告)日：2009-01-13

申请号：US10914190

申请日：2004-08-10

申请人： Hozumi Yasuda ,  Ikutaro Noji ,  Kazuto Hirokawa ,  Takeshi Iizumi ,  Itsuki Kobata

发明人： Hozumi Yasuda ,  Ikutaro Noji ,  Kazuto Hirokawa ,  Takeshi Iizumi ,  Itsuki Kobata

IPC分类号： C25F3/16 ,  B23H5/06 ,  B23H5/10 ,  B23H5/14

CPC分类号： C25F7/02

摘要： There are provided an electrolytic processing apparatus and an electrolytic processing method which can regenerate an ion exchanger with an enhanced regeneration rate of ion-exchange capacity without adversely affecting the throughput of the apparatus. The electrolytic processing apparatus includes: a holder for holding a workpiece; an electrode section including an electrode, a contact member, and a discharge portion for discharging metal ions which have been taken from the workpiece into the contact member during processing, said electrode section coming close to or into contact with the workpiece held by the holder to effect processing of the workpiece in the presence of a liquid; and a regeneration dummy electrode which can come close to or into contact with the contact member.

摘要翻译： 提供一种电解处理装置和电解处理方法，其可以以提高的离子交换容量的再生速率再生离子交换器，而不会不利地影响装置的生产量。 电解处理装置包括：用于保持工件的保持器; 电极部分，包括电极，接触部件和用于在处理期间从工件中取出的金属离子放电到接触部件中的放电部分，所述电极部分靠近或与保持件保持的工件接触或接触 在液体存在下对工件进行加工; 以及能够靠近或与接触构件接触的再生虚拟电极。

公开(公告)号：US20070181432A1

公开(公告)日：2007-08-09

申请号：US11723934

申请日：2007-03-22

申请人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

发明人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

IPC分类号： C25D5/10

CPC分类号： C25F7/00 ,  B23H3/00 ,  B23H3/04 ,  B23H3/08 ,  B23H5/08 ,  B24B37/04 ,  C25F3/00 ,  C25F5/00 ,  H01L21/32115 ,  H01L21/3212

摘要： The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.

摘要翻译： 本发明通过使用去离子水，超纯水等的电解处理通过化学机械抛光来代替基板处理的全部或一部分。 电解处理设备包括：化学机械抛光部分，用于对基材的表面进行化学机械抛光; 具有处理电极和供电电极的电解处理部分，并且还具有设置在基板和处理电极之间或基板与供电电极之间的至少一个的离子交换器，用于在存在的工件的表面上电解处理 通过在处理电极和馈电电极之间施加电压的解决方案; 以及能够在所述化学机械抛光部和所述处理电极部之间自由移动的顶环。

公开(公告)号：US20060234508A1

公开(公告)日：2006-10-19

申请号：US10513399

申请日：2003-05-16

申请人： Mitsuhiko Shirakashi ,  Hozumi Yasuda ,  Masayuki Kumekawa ,  Itsuki Kobata

发明人： Mitsuhiko Shirakashi ,  Hozumi Yasuda ,  Masayuki Kumekawa ,  Itsuki Kobata

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02087 ,  B23H5/04 ,  B23H5/08 ,  B24B37/345 ,  C25F3/00 ,  C25F7/00 ,  H01L21/0209 ,  H01L21/32115 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76873

摘要： There is provided a substrate processing apparatus which can process a substrate by using an electrolytic processing method, while reducing a load upon a CMP processing to the least possible extent. The substrate processing apparatus of the present invention includes: an electrolytic processing unit (36) for electrolytically removing the surface of the substrate W having a to-be-processed film formed in said surface, said unit including a feeding section (373) that comes into contact with said surface of the substrate W; a bevel-etching unit (48) for etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding section (373) in the electrolytic processing unit (36); a chemical mechanical polishing unit (34) for chemically and mechanically polishing the surface of the substrate.

摘要翻译： 提供了一种基板处理装置，其可以通过使用电解处理方法来处理基板，同时尽可能减少CMP处理时的负载。 本发明的基板处理装置包括：电解处理单元，用于电解去除在所述表面上形成的待处理膜的基板W的表面，所述单元包括来自的进料部分（373） 与基板W的所述表面接触; 斜面蚀刻单元（48），用于在电解处理单元（36）中与已经与供电部分（373）接触的部分处去除未处理的被处理膜; 化学机械抛光单元（34），用于化学和机械地抛光衬底的表面。

公开(公告)号：US20050067289A1

公开(公告)日：2005-03-31

申请号：US10948320

申请日：2004-09-24

申请人： Ikutaro Noji ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Kazuto Hirokawa ,  Itsuki Kobata

发明人： Ikutaro Noji ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Kazuto Hirokawa ,  Itsuki Kobata

IPC分类号： C25C7/06 ,  C25F7/00

CPC分类号： C25F7/00

摘要： An electrolytic processing apparatus can detect the endpoint of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus including: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss, said sensor being disposed not in contact with or separately by an insulator from the processing electrode and/or the feeding electrode.

摘要翻译： 电解处理装置能够以高精度和相对简单的结构稳定地检测电解加工的终点。 该电解处理装置包括：处理电极，其能够接近或与处理对象接触; 用于向处理对象供电的馈电电极; 流体供应部分，用于在处理对象与处理电极和馈送电极中的至少一个之间提供流体; 用于在处理电极和馈电电极之间施加电压的处理电源; 驱动部，其用于使处理对象与所述处理电极和所述馈送电极中的至少一个相对移动; 以及涡流传感器，用于根据涡流损耗的变化来检测加工对象的厚度，所述传感器被设置成不与处理电极和/或馈电电极接触或分离。

公开(公告)号：US5679063A

公开(公告)日：1997-10-21

申请号：US590477

申请日：1996-01-24

申请人： Norio Kimura ,  You Ishii ,  Hozumi Yasuda ,  Koji Saito ,  Masako Watase ,  Shiro Mishima

发明人： Norio Kimura ,  You Ishii ,  Hozumi Yasuda ,  Koji Saito ,  Masako Watase ,  Shiro Mishima

IPC分类号： B24B37/00 ,  B24B57/02 ,  B24B7/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A polishing apparatus for polishing a surface of an object such as a semiconductor wafer includes a turntable having a polishing cloth mounted on an upper surface thereof, a top ring for holding and pressing the object against the polishing cloth, and a plurality of radially arranged nozzles for supplying a polishing solution, containing abrasive material, of different concentrations that differ along a radial direction of the polishing cloth.

摘要翻译： 用于研磨诸如半导体晶片的物体的表面的抛光装置包括具有安装在其上表面上的抛光布的转盘，用于将物体保持并按压在抛光布上的顶环，以及多个径向布置的喷嘴 用于供应不同浓度的研磨材料的抛光溶液，该研磨材料沿抛光布的径向方向不同。

公开(公告)号：US08100739B2

公开(公告)日：2012-01-24

申请号：US12222908

申请日：2008-08-19

申请人： Hozumi Yasuda ,  Tetsuji Togawa ,  Osamu Nabeya ,  Kenichiro Saito ,  Makoto Fukushima ,  Tomoshi Inoue

发明人： Hozumi Yasuda ,  Tetsuji Togawa ,  Osamu Nabeya ,  Kenichiro Saito ,  Makoto Fukushima ,  Tomoshi Inoue

IPC分类号： B24B49/00

CPC分类号： B24B37/32

摘要： A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.