公开(公告)号：US20070229279A1

公开(公告)日：2007-10-04

申请号：US11716018

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： G08B13/14

CPC分类号： H01Q1/2225 ,  G06K19/0701 ,  G06K19/0702 ,  G06K19/0723 ,  G06K19/07767

摘要： The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.

摘要翻译： 本发明提供一种作为用于在RFID中供电的电源的电池，以及用于对电池充电的另一个天线，以及向外部发送和接收个人信息的天线作为向电池供电的装置。

公开(公告)号：US09123581B2

公开(公告)日：2015-09-01

申请号：US13287569

申请日：2011-11-02

申请人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

发明人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

IPC分类号： G06K19/06 ,  H01L27/12 ,  G06K19/07 ,  H01L21/84

CPC分类号： H01L27/12 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L21/84

摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

摘要翻译： 本发明的目的是提供一种使用小电路区域可以获得将数据写入存储器所需的高电位的半导体器件。 在本发明中，通过使用升压电路的输入电压而不是调节器电路104的常规使用的输出VDD，而是使用比VDD高的电压的整流电路部分103的输出VDD0， 可以以小的电路面积获得将数据写入存储器所必需的。

公开(公告)号：US20120133437A1

公开(公告)日：2012-05-31

申请号：US13367397

申请日：2012-02-07

申请人： Yutaka Shionoiri ,  Kiyoshi Kato ,  Munehiro Azami

发明人： Yutaka Shionoiri ,  Kiyoshi Kato ,  Munehiro Azami

IPC分类号： H03F3/45

CPC分类号： H03F3/45179 ,  G01R19/00 ,  G11C7/062 ,  G11C11/4091 ,  G11C11/413 ,  G11C2207/063 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2203/45396 ,  H03F2203/45506 ,  H03F2203/45546 ,  H03F2203/45551 ,  H03F2203/45702 ,  H03F2203/45726

摘要： A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

摘要翻译： 根据本发明的用于检测输入到第一输入端和第二输入端的信号的电位差的读出放大器包括：第一装置，用于将对应于第一和第二晶体管的阈值电压的电压施加到栅极源电压 第一和第二晶体管，以及用于将输入到第一和第二输入端的信号传送到第一和第二晶体管的栅极的第二装置。 在这种情况下，校正第一和第二晶体管的阈值变化。

公开(公告)号：US20110175083A1

公开(公告)日：2011-07-21

申请号：US13004200

申请日：2011-01-11

申请人： Yusuke Sekine ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Shunpei Yamazaki

发明人： Yusuke Sekine ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Shunpei Yamazaki

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/1052 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225

摘要： A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state (off-state current) between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or to the memory cell by applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another so that the predetermined amount of charge is held in the node. The memory window width is changed by 2% or less, before and after 1×109 times of writing.

摘要翻译： 半导体器件具有包括写入晶体管的非易失性存储单元，该晶体管包括氧化物半导体，并且在源极和漏极之间的截止状态（截止状态电流）中具有小的漏电流，读取晶体管包括不同于 写晶体管和电容器。 通过向写入晶体管的源电极和漏电极，电容器的一个电极和读取晶体管的栅电极之一彼此电连接的节点施加电位而将数据写入或存储到存储器单元，从而 在节点中保持预定量的电荷。 1×109次写入之前和之后，存储窗宽度改变2％以下。

公开(公告)号：US20090289340A1

公开(公告)日：2009-11-26

申请号：US12468280

申请日：2009-05-19

申请人： Shunpei Yamazaki ,  Yoshiaki Oikawa ,  Hironobu Shoji ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Masataka Nakada

发明人： Shunpei Yamazaki ,  Yoshiaki Oikawa ,  Hironobu Shoji ,  Yutaka Shionoiri ,  Kiyoshi Kato ,  Masataka Nakada

IPC分类号： H01L23/02 ,  H01L21/56

CPC分类号： G06K19/07749 ,  G06K19/07735 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/13 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01Q1/526 ,  H01Q7/00

摘要： A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.

摘要翻译： 覆盖半导体集成电路的导电屏蔽防止由于静电放电而导致的半导体集成电路的静电破坏（例如，电路的故障和对半导体元件的损坏）。 此外，通过使用夹在半导体集成电路之间的一对绝缘体，可以提供具有电阻的高可靠性的半导体，同时实现厚度和尺寸的减小。 此外，在制造过程中也防止外部应力或形状不良或由静电放电导致的特性劣化，从而可以高产率制造半导体器件。

公开(公告)号：US20060255837A1

公开(公告)日：2006-11-16

申请号：US11458710

申请日：2006-07-20

申请人： Yutaka Shionoiri ,  Kiyoshi Kato ,  Munehiro Azami ,  Junya Maruyama

发明人： Yutaka Shionoiri ,  Kiyoshi Kato ,  Munehiro Azami ,  Junya Maruyama

IPC分类号： G01R19/00

CPC分类号： H03F3/45179 ,  G01R19/00 ,  G11C7/062 ,  G11C11/4091 ,  G11C11/413 ,  G11C2207/063 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2203/45396 ,  H03F2203/45506 ,  H03F2203/45546 ,  H03F2203/45551 ,  H03F2203/45702 ,  H03F2203/45726

摘要： A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

公开(公告)号：US20050273290A1

公开(公告)日：2005-12-08

申请号：US11132434

申请日：2005-05-19

申请人： Etsuko Asano ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Masahiko Hayakawa

发明人： Etsuko Asano ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Masahiko Hayakawa

IPC分类号： G01R31/317 ,  G01R31/3187 ,  G06F19/00

CPC分类号： G01R31/3187 ,  G01R31/31723 ,  G01R31/31725 ,  G01R31/31726

摘要： The present invention provides a method for evaluating an intended element or a parameter. In addition, the invention provides an evaluation method for obtaining a more precise result rapidly. According to the invention, a plurality of evaluation circuits are formed over the same substrate, and while simultaneously operating the plurality of evaluation circuits, an output of one evaluation circuit selected by a selection circuit that is formed over the substrate is arbitrarily evaluated.

摘要翻译： 本发明提供了一种用于评估预期元素或参数的方法。 此外，本发明提供了一种快速获得更精确结果的评估方法。 根据本发明，在相同的基板上形成多个评估电路，并且在同时操作多个评估电路的同时，任意地评估由形成在基板上的选择电路选择的一个评估电路的输出。

公开(公告)号：US20050029519A1

公开(公告)日：2005-02-10

申请号：US10941823

申请日：2004-09-16

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.

摘要翻译： 提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。 半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域 区域，其中导电区域被设​​置成跨过线性条纹图案延伸的绝缘膜。

公开(公告)号：US20110254538A1

公开(公告)日：2011-10-20

申请号：US13085606

申请日：2011-04-13

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

IPC分类号： G01R19/00

CPC分类号： G01R31/2601 ,  G01R19/0092

摘要： One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.

摘要翻译： 一个目的是提供一种用于测量可以测量微小电流的电流的方法。 流过电气元件的电流的值不是直接测量的，而是根据在预定周期内观察到的电位的变化计算出的。 用于测量电流的方法包括以下步骤：将预定电位施加到具有第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据所述电位变化量计算在所述电气元件的所述第一端子和所述第二端子之间流动的电流值。 因此，可以测量微小电流的值。

公开(公告)号：US20110148455A1

公开(公告)日：2011-06-23

申请号：US12967230

申请日：2010-12-14

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri

IPC分类号： G01R31/26 ,  G01R19/00 ,  G01R27/26

CPC分类号： G01R31/275 ,  G01R19/0092 ,  G01R31/2884 ,  G09G3/20 ,  G09G2320/029

摘要： An object is to provide a current measurement method which enables a minute current to be measured. To achieve this, the value of a current flowing through an electrical element is not directly measured, but is calculated from a change in potential observed in a predetermined period. The detection of a minute current can be achieved by a measurement method including the steps of applying a predetermined potential to a first terminal of an electrical element comprising the first terminal and a second terminal; measuring an amount of change in potential of a node connected to the second terminal; and calculating, from the amount of change in potential, a value of a current flowing between the first terminal and the second terminal of the electrical element.

摘要翻译： 目的在于提供能够测量微小电流的电流测量方法。 为了实现这一点，不直接测量流过电气元件的电流的值，而是根据在预定周期内观察到的电位变化来计算。 可以通过测量方法来实现微小电流的检测，包括以下步骤：将预定电位施加到包括第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据电位变化量计算在电气元件的第一端子和第二端子之间流动的电流的值。