Abstract:
The present invention relates, in a projection aligner wherein a mask and a wafer are held proximate to one another and wherein a circuit pattern depicted on the mask is transferred onto the wafer, to a method of detecting the respective positions of the mask and the wafer for the relative positioning between the mask and the wafer. To the end of dispensing with the withdrawal of a microscope objective in such a way that the objective of a microscope for detecting the mask and the wafer and projection light, for example, an X-ray, are prevented from interfering, thereby to achieve the enhancement of throughput and to permit the detection of the positions of the mask and the wafer even during projection, the present invention consists in that the objective of the microscope is inclined with respect to a perpendicular to the plane of the mask or the plane of the wafer being a plane to-be-detected, so as not to interfere with the projection light, for example, the X-ray, whereby the circuit pattern can be transferred while the relative positions of the mask and the wafer are being detected.
Abstract:
A device for measuring the position of an object has a light radiation mechanism for causing light to be obliquely incident on a surface of the object, a vibrating mechanism for vibrating the light incident on the surface of the object at a predetermined frequency, and a detecting mechanism for detecting light reflected by the surface of the object, generating a detection signal, and obtaining the position of the object in accordance with the detection signal.
Abstract:
An apparatus and method for aligning a mask and wafer in the fabrication ofntegrated circuits utilizing alignment patterns on the mask and wafer. Each alignment pattern comprises a plurality of parallel alignment marks which are spaced from one another such that the patterns may be superimposed so that the marks of one pattern are positioned between marks of the other pattern. When the patterns are misaligned, a moire pattern is produced which disappears on alignment. The marks of each pattern are also disparately spaced from one another, permitting a gross to fine alignment. In aligning the patterns, each mark of one pattern is positioned between pairs of marks of the other pattern in an order corresponding to the widths of spaces defined between marks of the other pattern, progressing from the largest space width, giving gross alignment, to the smallest, giving fine alignment.
Abstract:
A lithography system for X-ray or other beam printing on a substrate such as a silicon semiconductor wafer comprises a beam chamber (301), a beam source (302), means (309) for mounting a mask, means (308) for mounting an image sensing means (342) interiorly of the chamber, means (317, 318), for mounting a substrate (307) in multiple including six degrees of freedom and means (308, 292, 320-322) including the image sensing means to align the mask and substrate relative to one another utilizing alignment patterns on the mask and substrate, images of which are brought into registration and sensed by the image sensing means. In a preferred embodiment three sets of target images are provided so as to adjust the substrate and mask relative orientation in six degrees of freedom. The mask seals helium within the chamber. The mask and the substrate are aligned in situ in the same position in which the mask and substrate are to be exposed to the beam. Means (313, 314, 311, 312) are provided for loading masks, calibration assemblies and substrate-holding means. The source-to-substrate distance is adjustable as is the mask-to-substrate gap. To conserve helium volume adjustable optic objectives (342) are provided in the chamber to sense registration of alignment targets on each of the mask and substrate, with essentially the remainder of the optics outside the chamber. Improved compression optics (408) are also provided in the alignment system.
Abstract:
There is provided a condensing point position detecting method of detecting a position in an optical axis direction of a condensing point of a laser beam condensed by a condenser of a laser processing apparatus. The condensing point position detecting method includes: an irradiation mark forming step of forming a plurality of irradiation marks in a substrate by irradiating the substrate held by a chuck table with the laser beam while moving the condenser in the optical axis direction with respect to the substrate; and a condensing point position detecting step of detecting an irradiation mark having a proper shape from the plurality of irradiation marks formed in the substrate, and detecting the position of the condensing point forming the proper irradiation mark as a position of an accurate condensing point.
Abstract:
An initialization method including estimating a characteristic of a property of an object based on a plurality of measurements by the sensor of the property using a respective plurality of different measurement parameters, different ones of the measurements using different measurement parameters, the characteristic including a combination of respective outcomes of respective ones of the measurements weighted by a respective weighting coefficient; performing, for each of a plurality of models of the object, each model configured to enable respective simulation of the performing of the measurements, a respective simulation, the respective simulation including simulating the measurements under control of a respective plurality of different simulation parameters to obtain a respective plurality of simulated characteristics of the property, the different simulation parameters being indicative of the different measurement parameters; determining, for each of the models, a respective bias representative of a respective difference between a respective theoretical characteristic of the property in accordance with the respective model and a respective further combination of the simulated characteristics of the property in the respective model, the respective further combination of the simulated characteristics including the weight coefficients, each particular one of the weight coefficients associated with a particular one of the different simulation parameters; using a cost function configured to optimize a correspondence between the simulated characteristic of the property and the theoretical characteristic of the property, the cost function being a function of the respective biases of the models; and optimizing the cost function to derive the weight coefficients from the cost function; and using the weight coefficients and the associated simulation parameters in a controller associated with the sensor.
Abstract:
The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.
Abstract:
The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.
Abstract:
The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.
Abstract:
The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.