公开(公告)号：US5536193A

公开(公告)日：1996-07-16

申请号：US264386

申请日：1994-06-23

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.

Abstract translation: 公开了一种场致发射器，其包括与导电金属的平坦表面接触并从其突出的暴露的宽带隙发射区域，以及制造方法。 合适的宽带隙材料（2.5-7.0电子伏特）包括金刚石，氮化铝和氮化镓; 合适的导电金属包括钛，钨，金和石墨。 该方法包括将宽带隙材料设置在基板上，将导电金属设置在宽带隙材料上，蚀刻导电金属以暴露宽带隙发射区域。 发射区域非常适合大面积平板显示器。

公开(公告)号：US4969850A

公开(公告)日：1990-11-13

申请号：US379231

申请日：1989-07-13

Applicant: James L. S. Wales

Inventor： James L. S. Wales

IPC: C25D11/04 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403

Abstract: A method is provided for manufacturing a cold cathode field emission device. The method comprises the steps of:providing a layer of anodised alumina having a plurality of elongate pores which are substantially orthogonal to major surfaces of the layer;filling said pores completely with an electron emission material, and then removing at least a part of said layer to form a defined surface of said layer and to produce a plurality of electron emissive spikes extruding from and at an angle to said defined surface wherein a plurality of electron emissive structures are produced, each structure comprising a plurality of electron emissive spikes inclined to one another.

公开(公告)号：US4498952A

公开(公告)日：1985-02-12

申请号：US419499

申请日：1982-09-17

Applicant: Alton O. Christensen

Inventor： Alton O. Christensen

IPC: H01J1/304 ,  H01J9/02 ,  B44C1/22 ,  H01L21/306 ,  C23F1/02 ,  B05D5/12

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J9/02 ,  H01J2201/30403 ,  Y10T29/413

Abstract: A semiconductor type batch fabrication procedure is disclosed in the preferred and illustrated embodiment. The process forms individual field emission devices and the necessary electron optics for each. The optics, having the form of various anodes, is aligned on a common axis above a pyramid or conic member terminating at a tip which functions as a microgun with the anodes. The microgun structure is supported on a substrate and forms, modulates, deflects and focuses electron beams. The complete device utilizes voltage levels routinely obtained in conventional integrated circuits, which integrated circuits may be simultaneously fabricated on the same supportive substrate with the microguns. The procedure further contemplates the fabrication of a complete array of microguns arranged in rows and columns.

Abstract translation: 在优选和所示实施例中公开了半导体型批量制造程序。 该过程形成各个场发射器件和每个必需的电子光学器件。 具有各种阳极形式的光学元件在位于尖端上的金字塔或圆锥形构件上方的公共轴上对准，该尖端用作具有阳极的微枪。 微枪结构支撑在基板上并形成，调制，偏转和聚焦电子束。 整个设备利用常规集成电路中常规获得的电压电平，集成电路可以与微枪同时制造在相同的支撑基板上。 该程序进一步考虑制造以行和列排列的完整的微枪阵列。

公开(公告)号：US11688579B2

公开(公告)日：2023-06-27

申请号：US17549854

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： Juying Dou ,  Zheng Fan ,  Tzu-Yi Kuo ,  Zhong-wei Chen

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/304 ,  H01J1/14 ,  H01J9/02 ,  H01J9/04 ,  H01J37/26

CPC classification number: H01J37/073 ,  H01J1/14 ,  H01J1/304 ,  H01J9/025 ,  H01J9/042 ,  H01J37/065 ,  H01J37/26 ,  H01J2201/196 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30449 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06308 ,  H01J2237/06316 ,  H01J2237/06341

Abstract: Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

公开(公告)号：US20180012721A1

公开(公告)日：2018-01-11

申请号：US15700297

申请日：2017-09-11

Applicant: Korea University Research and Business Foundation

Inventor： Cheol Jin Lee ,  Dong Hoon Shin ,  Ki Nam Yun ,  Yu Ning Sun

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J29/04 ,  H01J2201/30403

Abstract: The present disclosure relates to a manufacturing method for an electron emitting device using a graphite adhesive material. A method of preparing paste for forming a cathode of an electron emitting device includes: mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent; drying a mixed solution in which the nanomaterial and the graphite filler are mixed; and preparing paste by mixing a graphite binder with the dried mixture.

公开(公告)号：US08080929B2

公开(公告)日：2011-12-20

申请号：US12154903

申请日：2008-05-27

Applicant: Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

Inventor： Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J9/025 ,  C23C16/26 ,  C23C16/45523 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30461

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract translation: 提供了一种制造复合场致发射源的方法。 通过使用RF磁控管溅射进行成膜处理的第一阶段，以在纳米结构膜为由多个纳米石墨壁构成的花瓣状结构的基板上形成纳米结构膜。 之后，进行第二阶段的成膜工艺以增加纳米结构膜上的碳积累量。 因此，可以获得具有高强度和纳米珊瑚状结构的复合场发射源，从而提高电场发射的效果和寿命。

公开(公告)号：US20110101847A1

公开(公告)日：2011-05-05

申请号：US12985814

申请日：2011-01-06

Applicant: Hung-Yuan LI ,  Jian-Min Jeng ,  Ching-Hsuang Cheng ,  Nien-Chun Chin ,  Tzung-Han Yang

Inventor： Hung-Yuan LI ,  Jian-Min Jeng ,  Ching-Hsuang Cheng ,  Nien-Chun Chin ,  Tzung-Han Yang

IPC: H01J1/14 ,  H01J9/04

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/3195

Abstract: A field emission cathode plate is disclosed, which includes: a substrate; a cathode layer, disposed on the substrate; a conductive layer with an arc surface or a resistor layer with an opening and resistivity larger than that of the cathode layer, disposed on the cathode layer; and a cambered field emission layer, having an arc surface and disposed on the conductive layer or on the cathode layer in the opening of the resistor layer and covering the resistor layer around the opening. The present invention also provides a method for fabricating the above-mentioned field emission cathode plate. The method can provide field emission cathode plate achieving uniform field emission and does not involve high resolution and cost.

Abstract translation: 公开了一种场致发射阴极板，其包括：基板; 阴极层，设置在所述基板上; 设置在阴极层上的具有电弧表面的导电层或具有大于阴极层的开口和电阻率的电阻层的电阻层; 和具有弧形表面的弧形场发射层，并且设置在电阻层的开口中的导电层上或阴极层上，并围绕开口覆盖电阻层。 本发明还提供一种制造上述场致发射阴极板的方法。 该方法可以提供场发射阴极板实现均匀的场发射，并且不涉及高分辨率和成本。

公开(公告)号：US07875469B2

公开(公告)日：2011-01-25

申请号：US12001631

申请日：2007-12-12

Applicant: Heinz H. Busta

Inventor： Heinz H. Busta

IPC: H01L21/00

CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从杆的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和杆之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

公开(公告)号：US20090015133A1

公开(公告)日：2009-01-15

申请号：US12061818

申请日：2008-04-03

Applicant: Woo-Hu TSAI ,  Tzung-Han Yang ,  Hsin-Ju Wu

Inventor： Woo-Hu TSAI ,  Tzung-Han Yang ,  Hsin-Ju Wu

IPC: H01J1/62

CPC classification number: H01J1/304 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2203/0204 ,  H01J2203/0216

Abstract: The present invention relates to a field emission device and an electrode structure thereof, comprising a starting base and a curved extending part formed on a surface of various shaped or dimensional structure. Therefore, the applied device and range is increased. The curved extending part is also for reducing the number of the contact point, as to simplify the procedure to design the peripheral circuit. Besides, a resisting section can be formed on the starting base. The resisting value of the resisting section is designed to provide various lighting effects.

Abstract translation: 本发明涉及一种场发射器件及其电极结构，其包括起始基座和形成在各种形状或尺寸结构的表面上的弯曲的延伸部分。 因此，应用的设备和范围增加。 弯曲的延伸部分也用于减少接触点的数量，以简化设计外围电路的过程。 此外，可以在起始基座上形成抵抗部分。 电阻部分的电阻值被设计成提供各种照明效果。

公开(公告)号：US20060244364A1

公开(公告)日：2006-11-02

申请号：US11476045

申请日：2006-06-28

Applicant: Masayuki Nakamoto

Inventor： Masayuki Nakamoto

IPC: H01J63/04 ,  H01J1/62

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/939 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.