公开(公告)号：US08907305B2

公开(公告)日：2014-12-09

申请号：US13816466

申请日：2011-08-10

Applicant: Eric Kneedler ,  Jonathan H. Orloff

Inventor： Eric Kneedler ,  Jonathan H. Orloff

IPC: G21K1/00 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/04 ,  H01J2237/04756 ,  H01J2237/0535

Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

Abstract translation: 公开了一种用于成像和处理目标的带电粒子束系统，包括带电粒子柱，二次粒子检测器和靶和检测器之间的二次粒子检测栅组件。 在一个实施例中，电网组件包括多个栅格，每个具有单独的偏置电压，其中可以使用电网电压来调整目标和栅极之间的电场，以优化到达检测器的次级颗粒的空间分布。 由于检测器寿命由在接收最大剂量的检测器上的区域累积的总剂量确定，所以可以通过使检测器的剂量在空间上更均匀地增加检测器寿命。 具有径向电压梯度的单个电阻栅组件可以替代单独的栅极。 多个偏转器电极可以位于靶和栅格之间以增强电场的形状。

公开(公告)号：US20140131589A1

公开(公告)日：2014-05-15

申请号：US14073600

申请日：2013-11-06

Applicant: ADVANTEST CORPORATION

Inventor： Akio Yamada

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/04 ,  H01J2237/04 ,  H01J2237/045 ,  H01J2237/1538 ,  H01J2237/31776

Abstract: An electron beam EB0 emitted from an electron gun 101 is cut by a first aperture 103a into a rectangular electron beam DB', which is then cut by second and third apertures 140a, 150a into an electron beam EB3 so that the edge cut by the first aperture 103a is removed from the electron beam EB1. This can prevent blur due to the influence of coulomb interaction of the electron beam EB1 between the first and second apertures 103a to 140a and perform highly accurate exposure with the electron beam EB3 having high current density.

Abstract translation: 从电子枪101发射的电子束EB0由第一孔103a切割成矩形电子束DB'，然后由第二和第三孔140a，150a切割成电子束EB3，使得由第一孔 孔103a从电子束EB1去除。 这可以防止由于电子束EB1在第一和第二孔103a至140a之间的库仑相互作用的影响而造成的模糊，并且对具有高电流密度的电子束EB3进行高精度的曝光。

公开(公告)号：US07692139B2

公开(公告)日：2010-04-06

申请号：US11872576

申请日：2007-10-15

Applicant: Bon Woong Koo ,  Frank Sinclair

Inventor： Bon Woong Koo ,  Frank Sinclair

IPC: H01J37/317

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/04 ,  H01J2237/05

Abstract: A system for ion beam neutralization includes a beamguide configured to transport an ion beam through a dipole field, a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The system may further include a charged particle source having one or more apertures configured to inject charged particles into the ion beam. The system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam.

Abstract translation: 用于离子束中和的系统包括被配置为将离子束传送通过偶极场的波导，第一磁体阵列和被配置为产生多尖点磁场的第二磁体阵列，第一磁体阵列位于第一 离子束路径的一侧和第二磁体阵列位于离子束路径的第二侧上。 该系统还可以包括具有一个或多个孔的带电粒子源，所述孔被配置为将带电粒子注入到离子束中。 该系统还可以将一个或多个孔与第一磁体阵列和第二磁体阵列中的至少一个对准，以使来自带电粒子源的注入的带电粒子与一个或多个磁性区域对准，以使有效的带电粒子扩散成 离子束。

公开(公告)号：US5900629A

公开(公告)日：1999-05-04

申请号：US44833

申请日：1998-03-20

Applicant: Hideo Todokoro ,  Makoto Ezumi

Inventor： Hideo Todokoro ,  Makoto Ezumi

IPC: H01J37/244 ,  H01J37/256 ,  H01J37/28 ,  H01J37/285

CPC classification number: H01J37/244 ,  H01J37/145 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/04 ,  H01J2237/04756 ,  H01J2237/2449

Abstract: A scanning microscope is provided for producing a scan image at high spatial resolution and in a low acceleration voltage area. An acceleration tube is located in an electron beam path of an objective lens for applying a post-acceleration voltage of the primary electron beam. The application of an overlapping voltage onto a sample allows a retarding electric field against the primary electron beam to be formed between the acceleration tube and the sample. The secondary electrons generated from the sample and the secondary signals such as reflected electrons are extracted into the acceleration tube through the effect of an electric field (retarding electric field) immediately before the sample. The signals are detected by secondary signal detectors located upwardly than the acceleration tube.

公开(公告)号：US12009176B2

公开(公告)日：2024-06-11

申请号：US18321442

申请日：2023-05-22

Applicant: FEI Company

Inventor： Bart Buijsse ,  Bart Jozef Janssen

IPC: H01J37/26 ,  H01J37/295

CPC classification number: H01J37/265 ,  H01J37/295 ,  H01J2237/04

Abstract: Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

公开(公告)号：US20240030005A1

公开(公告)日：2024-01-25

申请号：US18354944

申请日：2023-07-19

Applicant: Tokyo Electron Limited

Inventor： Tetsuma YAGUCHI

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J2237/04

Abstract: A substrate processing apparatus includes a plasma processing chamber configured to accommodate a substrate, and a ring assembly provided around the substrate and including a dielectric, and a potential generator disposed on the dielectric and formed of a conductive material. A lower surface of the potential generator is disposed at a position higher than an upper surface of the substrate. The substrate processing apparatus further includes a power supply configured to supply a direct current signal or a radio frequency signal to the potential generator.

公开(公告)号：US11699568B2

公开(公告)日：2023-07-11

申请号：US17659800

申请日：2022-04-19

Applicant: NexGen Semi Holding, Inc.

Inventor： Mark Joseph Bennahmias ,  Michael John Zani ,  Jeffrey Winfield Scott

IPC: H01J37/30 ,  H01J37/31 ,  H01J37/317

CPC classification number: H01J37/3007 ,  H01J37/3174 ,  H01J2237/04

Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

公开(公告)号：US20170250052A1

公开(公告)日：2017-08-31

申请号：US15595214

申请日：2017-05-15

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Alex GOLDENSHTEIN

IPC: H01J37/073 ,  H01J37/28

CPC classification number: H01J37/073 ,  H01J37/026 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/04 ,  H01J2237/063 ,  H01J2237/2801 ,  H01J2237/2817

Abstract: A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

公开(公告)号：US09500953B2

公开(公告)日：2016-11-22

申请号：US14361145

申请日：2012-11-02

Applicant: ASML Netherlands B.V.

Inventor： Jan Frederik Hoogkamp ,  Bastiaan Stephanus Hendricus Jansen ,  Maurice Willem Jozef Etiënne Wijckmans

IPC: G03B27/54 ,  G03B27/72 ,  G03B27/74 ,  G03F7/20 ,  H01J37/32 ,  H05G2/00

CPC classification number: G03F7/70033 ,  G03F7/70141 ,  G03F7/70175 ,  G03F7/7085 ,  H01J37/32339 ,  H01J2237/04 ,  H01J2237/327 ,  H05G2/005 ,  H05G2/008

Abstract: A radiation source (SO) suitable for providing a beam of radiation to an illuminator of a lithographic apparatus. The radiation source comprises a nozzle (128) configured to direct a stream of fuel droplets along a trajectory (140) towards a plasma formation location (212). The radiation source is configured to receive a first amount of radiation (205) such that, in use, the first amount of radiation is incident on a fuel droplet at the plasma formation location. The first amount of radiation transfers energy to the fuel droplet to generate a radiation generating plasma that emits a second amount of radiation (132). The radiation source further comprises an alignment detector having a first sensor arrangement (122) and a second sensor arrangement (134). The first sensor arrangement is configured to measure a property of a third amount of radiation (205a) that is indicative of a focus position of the first amount of radiation. The second sensor arrangement is configured to measure a property of a fourth amount of radiation (138), the fourth amount of radiation being a portion of the first amount of radiation that is reflected by the fuel droplet upon which the first amount of radiation is incident.

Abstract translation: 适合于向光刻设备的照明器提供辐射束的辐射源（SO）。 辐射源包括被配置为沿着轨迹（140）引导燃料液滴流朝向等离子体形成位置（212）的喷嘴（128）。 辐射源被配置为接收第一量的辐射（205），使得在使用中，第一量的辐射入射在等离子体形成位置处的燃料液滴上。 第一量的辐射将能量传递到燃料液滴以产生发射第二量的辐射的辐射产生等离子体（132）。 辐射源还包括具有第一传感器装置（122）和第二传感器装置（134）的对准检测器。 第一传感器装置被配置为测量指示第一辐射量的焦点位置的第三量的辐射（205a）的性质。 第二传感器装置被配置成测量第四量的辐射（138）的性质，第四辐射量是被第一辐射量入射的燃料液滴反射的第一辐射量的一部分 。

公开(公告)号：US09496120B2

公开(公告)日：2016-11-15

申请号：US15136503

申请日：2016-04-22

Applicant: Glenn Lane Family Limited Liability Limited Partnership

Inventor： Glenn E. Lane

IPC: H01J37/30 ,  C23C14/48 ,  C23C14/54 ,  H01J37/317 ,  H01J49/06 ,  H01L21/265

CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.