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公开(公告)号：US5511084A
公开(公告)日：1996-04-23
申请号：US372936
申请日：1995-01-17
CPC分类号： H01S5/1032 , H01S5/06206 , H01S5/1035
摘要： Tunable laser diode having an integrated Mach-Zehnder interferometer is provided. A first and a second waveguide are arranged vertically relative to one another with respect to the layer plane as stripe-shaped layers. The second waveguide extends over the entire resonator length between mirror end faces, whereas the first waveguide is only present in one or more interconnected sections provided as coupling region. The waveguides are arranged in such close proximity to one another in this coupling region that coupling occurs between modes guided in the waveguides. An active layer and a tuning layer are arranged vertically relative to one another in these waveguides. A separate current injection into this tuning layer and into this active layer are present, and an interconnected section of the waveguide not present over the entire resonator length is a respective, natural multiple of the coupling length of two specific modes in the waveguides to be coupled.
摘要翻译： 提供具有集成的马赫 - 曾德尔干涉仪的可调谐激光二极管。 第一和第二波导相对于作为条形层的层平面彼此垂直地布置。 第二波导在镜端面之间在整个谐振器长度上延伸，而第一波导仅存在于作为耦合区域提供的一个或多个互连部分中。 波导在该耦合区域中彼此靠近地布置，使得耦合发生在在波导中引导的模式之间。 在这些波导中，有源层和调谐层相对于彼此垂直地布置。 存在对该调谐层和该有源层的单独的电流注入，并且在整个谐振器长度上不存在的波导的互连部分是要耦合的波导中的两个特定模式的耦合长度的相应的自然倍数 。
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32.发明授权Semiconductor optical device with light controlling layer of super-lattice structure 失效具有超晶格结构的光控层的半导体光器件
公开(公告)号：US5499259A
公开(公告)日：1996-03-12
申请号：US265752
申请日：1994-06-27
申请人： Kikuo Makita
发明人： Kikuo Makita
IPC分类号： G02F1/313 , G02F1/015 , G02F1/017 , G02F1/025 , G02F1/31 , H01L33/06 , H01L33/12 , H01L33/30 , H01S5/00 , H01S5/062 , H01S3/18
CPC分类号： B82Y20/00 , G02F1/017 , H01S5/06206 , G02F1/01708 , G02F1/3133 , G02F2001/0155
摘要： A semiconductor optical device such as a light modulator or a tunable laser emitting diode has either light absorbing/transmitting layer, light modulation layer or tuning layer responsive to an electric field for changing the intensity or the wavelength of an output light, and the light absorbing/transmitting layer, the light modulation layer or the tuning layer is implemented by a super-lattice structure formed by using a first compound semiconductor material and a second compound semiconductor material, wherein the second compound semiconductor material is larger in electron affinity as well as the total of electron affinity and energy band gap than the first compound semiconductor material so that a large extinction ratio or a wide variation in wavelength is achieved.
摘要翻译： 诸如光调制器或可调谐激光发射二极管的半导体光学器件具有响应于用于改变输出光的强度或波长的电场的光吸收/透射层，光调制层或调谐层，并且光吸收 透射层，光调制层或调谐层由通过使用第一化合物半导体材料和第二化合物半导体材料形成的超晶格结构实现，其中第二化合物半导体材料的电子亲和力以及 与第一化合物半导体材料的电子亲和力和能带隙的总和相比，可获得大的消光比或宽的波长变化。
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33.发明授权Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices 失效用于控制电光半导体器件的电磁输出功率的方法和装置
公开(公告)号：US5422904A
公开(公告)日：1995-06-06
申请号：US110141
申请日：1993-08-20
CPC分类号： H01S5/06203 , H01S5/0265 , H01S5/0612 , H01S5/06206 , H01S5/06832 , H01S5/3428
摘要： The present invention relates to a separate confinement heterostructure laser, and in particular to a stripe geometry, ridge waveguide geometry, having an active layer positioned between a pair of n-type and p-type emitter layers which inject charge carriers under the ridge guide into the active layer. A pair of ohmic contacts are used to inject one type of charge carrier into at least one emitter layer outside the ridge area. When a signal is applied to the pumping contacts (p- and n-type) in forward bias and an intermittent electric field is applied to the ohmic side contacts, the flow of current injected by the side contacts controls the densities of carriers injected by the pumping contacts, thereby controlling spatially and temporally the optical gain and optical confinement factor. In another embodiment, a stripe geometry, ridge waveguide heterostructure laser is disclosed having pumping contacts under the ridge guide to an active layer between two emitter layers with a portion coextending transversely through the ridge and another portion extending laterally outside the ridge. A pair of electro-optic dielectric layers are positioned on the portion of one emitter layer extending outside the ridge. An electric field is applied to the emitter layers under the ridge contact to inject two types of charge carriers into the active layer, and an intermittent electric field is applied across the dielectric layer outside the ridge guide to modulate the refractive index, thereby controlling the optical mode shape. By synchronously applying signals to the pumping contacts and to the side contacts, modulation above 50 MHz can be attained and picosecond pulses can be generated in the devices of both embodiments, thereby reducing chirp and relaxation oscillations.
摘要翻译： 本发明涉及一种单独的约束异质结构激光器，特别涉及一种条形几何形状的脊形波导几何形状，其具有位于一对n型和p型发射极层之间的有源层，其将电荷载体注入脊导向器下方 活动层。 一对欧姆接触用于将一种类型的电荷载体注入到脊部区域外的至少一个发射极层。 当信号被施加到正向偏压的泵浦触点（p型和n型）并且间断电场被施加到欧姆侧触点时，由侧触点注入的电流的流量控制由 泵浦触点，从而在空间和时间上控制光学增益和光限制因子。 在另一个实施例中，公开了一种条形几何形状的脊形波导异质结构激光器，其具有在脊状引导件下面的两个发射极层之间的有源层的泵浦接触，其中横向穿过脊部共同延伸的部分，以及横向延伸到脊部外部的另一部分。 一对电光电介质层位于在脊外延伸的一个发射极层的部分上。 将电场施加到脊形接触下方的发射极层，将两种类型的载流子注入到有源层中，并且在脊导向器外侧的电介质层上施加间歇电场以调节折射率，由此控制光学 模式形状。 通过将信号同步施加到泵浦触点和侧触点，可以获得高于50MHz的调制，并且可以在两个实施例的装置中产生皮秒脉冲，从而减少啁啾和松弛振荡。
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34.发明授权Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices 失效用于控制电光半导体器件的电磁输出功率的方法和装置
公开(公告)号：US5321253A
公开(公告)日：1994-06-14
申请号：US19713
申请日：1993-02-19
CPC分类号： H01S5/06203 , H01S5/0265 , H01S5/0612 , H01S5/06206 , H01S5/06832 , H01S5/3428
摘要： The output electromagnetic power of optoelectric heterojunction semiconductor devices having an active semiconductor layer with a mobile charge carrier plasma is controlled by applying a microwave electric field inside the active layer by means of at least two semiconductor contacts to the active layer that are conducting to at least one type of mobile charge carrier and blocking to another type of charge carrier. An electrical signal is applied inside the active layer to transform the distribution of energies and equivalent temperature of the charge carriers of the mobile charge carriers in order to control light emission and absorption in the active layer. A modulator is disclosed with two such semiconductor contacts on the active layer in which charge carriers are optically generated. A monolithically integrated, cavity-coupled laser and modulator is disclosed in which the laser and modulator are fabricated on a common substrate and the laser is a distributed feedback laser (DFB). Another monolithically integrated cavity-coupled laser and modulator is fabricated in which the laser and modulator are coupled Fabrey-Perot optical cavities separated by a low-loss, 1-3 um groove. Operating modes of the modulator and laser are disclosed which include synchronously controlling the intensity period and phase of the signal controlling the electric field inside the active layer of the modulator and the signal controlling the laser. Best mode of operation is disclosed in which the signal sources to the laser and modulator are synchronously controlled to a cavity-coupled monolithically integrated laser and modulator, thereby generating short pulses of photonic radiation at a high data rate and with best mode and spectral quality.
摘要翻译： 具有带有移动电荷载流子等离子体的有源半导体层的光电异质结半导体器件的输出电磁功率通过至少两个半导体触点施加到有源层内的有源层内的至少两个半导体触点至少导通至少 一种类型的移动电荷载体和阻挡到另一种类型的电荷载体。 在有源层内部施加电信号以转换能量分布和等效温度的移动电荷载流子的载流子，以便控制有源层中的发光和吸收。 公开了一种调制器，在有源层上有两个这样的半导体触点，其中电荷载体被光学地生成。 公开了单片集成的腔耦合激光器和调制器，其中激光器和调制器制造在公共衬底上，激光器是分布式反馈激光器（DFB）。 制造另一个单片集成的腔耦合激光器和调制器，其中激光器和调制器通过低损耗1-3μm槽分隔的Fabrey-Perot光学腔耦合。 公开了调制器和激光器的操作模式，其包括同步地控制控制调制器的有源层内的电场的信号的强度周期和相位以及控制激光器的信号。 公开了最佳操作模式，其中激光和调制器的信号源被同步地控制到腔耦合的单片集成激光器和调制器，从而以高数据速率和最佳模式和频谱质量产生短脉冲的光子辐射。
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35.发明授权Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices 失效用于控制电光半导体器件的电磁输出功率的方法和装置
公开(公告)号：US5274225A
公开(公告)日：1993-12-28
申请号：US815174
申请日：1991-12-31
CPC分类号： H01S5/06203 , H01S5/0265 , H01S5/0612 , H01S5/06206 , H01S5/06832 , H01S5/3428
摘要： The output electromagnetic power of optoelectric heterojunction semiconductor devices having an active semiconductor layer with a mobile charge-carrier plasma is controlled by applying a microwave electric field inside the active layer by means of at least two semiconductor contacts to the active layer that are conducting to at least one type of mobile charge carrier and blocking to another type of charge carrier. An electrical signal is applied inside the active layer to transform the distribution of energies and equivalent temperature of the charge carriers of the mobile charge-carrier plasma in order to control light emission and absorption in the active layer. A heterojunction semiconductor laser is disclosed with two sets of electrical contacts: one to apply pumping currents and the other to control the electric field. Operating modes of the heterojunction devices are discussed which include high frequency (up to 100 GHz) modulation of the electromagnetic output of the laser, formation of picosecond optical pulses, and simultaneous amplitude modulation and mixing two signals by controlling synchronously the intensity, period and phase of pumping current and electric-field inside the active layer.
摘要翻译： 具有移动电荷载流子等离子体的有源半导体层的光电异质结半导体器件的输出电磁功率通过利用至少两个半导体触点在有源层内部向有源层施加微波电场来控制， 至少一种类型的移动电荷载体和阻挡到另一种类型的电荷载体。 在有源层内部施加电信号以变换移动电荷载流子等离子体的电荷载流子的能量分布和等效温度，以控制有源层中的发光和吸收。 公开了一种异质结半导体激光器，其具有两组电触点：一组用于施加泵浦电流，另一组用于控制电场。 讨论了异质结器件的工作模式，其包括激光器的电磁输出的高频（高达100GHz）的调制，皮秒光脉冲的形成，以及通过同时控制强度，周期和相位来同步调幅和混合两个信号 的有源层内的电流和电场。
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公开(公告)号：US3417246A
公开(公告)日：1968-12-17
申请号：US47480065
申请日：1965-07-26
申请人： GEN ELECTRIC
发明人： HALL ROBERT N
CPC分类号： H01S5/06206 , H01L33/00 , H01S3/107
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公开(公告)号：US12092766B2
公开(公告)日：2024-09-17
申请号：US17962728
申请日：2022-10-10
发明人： Jacob Levy , Ayan Chakrabarty , Vala Fathipour , Karim El Amili
CPC分类号： G01S7/484 , G01S17/34 , H01S5/06206
摘要： Various technologies described herein pertain to injection locking on-chip laser(s) and external on-chip resonator(s). A system includes a first integrated circuit chip and a second integrated circuit chip. The first integrated circuit chip and the second integrated circuit chip are separate integrated circuit chips and can be optically coupled to each other. The first integrated circuit chip includes a laser configured to emit light via a first path and a second path. The second integrated circuit chip includes a resonator formed of an electrooptic material. The resonator can receive the light emitted by the laser of the first integrated circuit chip via the first path and return feedback light to the laser of the first integrated circuit chip via the first path. The feedback light can cause injection locking of the laser to the resonator to control the light emitted by the laser (e.g., via the first and second paths).
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公开(公告)号：US08073033B2
公开(公告)日：2011-12-06
申请号：US12617637
申请日：2009-11-12
申请人： Akinori Hayakawa , Ken Morito
发明人： Akinori Hayakawa , Ken Morito
IPC分类号： H01S5/00
CPC分类号： H01S5/06256 , H01S5/026 , H01S5/0425 , H01S5/0602 , H01S5/06206 , H01S5/06258 , H01S5/4031 , H01S5/50
摘要： Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.
摘要翻译： 目标通过光学半导体器件实现，包括：包括衬底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从用于有源层的电极92a向活性层提供预偏置电流 在没有从用于切换到有源层54的电极92c提供开关电流的状态下，然后当从用于有源层的电极92a向活性层54提供用于激活的电流Idrive时，激光器 通过从用于切换的电极92c向有源层54的一部分提供开关电流Isw来接通元件100，并且通过停止切换电流Isw的供应来关闭激光元件100。
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公开(公告)号：US07653093B2
公开(公告)日：2010-01-26
申请号：US10237500
申请日：2002-09-09
申请人： Geert Morthier
发明人： Geert Morthier
CPC分类号： H01S5/06206 , H01S5/06258 , H01S5/1209 , H01S5/1218
摘要： A widely tunable laser structure with at least two different sampled or superstructure gratings is provided. The widely tunable laser only requires as much tuning currents as gratings. In the case of two gratings, two tuning currents, instead of 3 tuning currents in a typical laser, are needed. Alternatively, the laser structure can be denoted a sampled or superstructure grating tunable laser with wide tunability characteristics, with a limited amount of needed tuning parameters, e.g., two currents.
摘要翻译： 提供了具有至少两个不同采样或超结构光栅的广泛可调激光器结构。 广泛可调的激光器只需要与光栅一样多的调谐电流。 在两个光栅的情况下，需要两个调谐电流，而不是典型激光器中的3个调谐电流。 或者，激光器结构可以被表示为具有宽可调特性的采样或超结构光栅可调谐激光器，具有有限量的所需调谐参数，例如两个电流。
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公开(公告)号：US07106772B2
公开(公告)日：2006-09-12
申请号：US10747170
申请日：2003-12-30
申请人： Norihiko Sekine
发明人： Norihiko Sekine
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/06206 , H01S5/12 , H01S5/2226 , H01S5/2275 , H01S5/3211 , H01S5/3434 , H01S5/34373
摘要： A tuning layer is disposed spaced by some distance apart from an active layer in a thickness direction, the tuning layer having a transition wavelength shorter than a wavelength of light radiated from the active layer. A diffraction grating layer is disposed between the active layer and tuning layer, a refractive index of the diffraction grating layer being periodically changed along an optical resonator direction. A first electrode supplies the active layer with current. A second electrode supplies the tuning layer with current independently from the current to be supplied to the active layer. A TTG-DFB laser is provided which can maintain a proper coupling coefficient and has characteristics suitable for application to communication light sources.
摘要翻译： 调谐层在厚度方向上与有源层隔开一段距离设置，调谐层具有比从有源层辐射的光的波长短的过渡波长。 衍射光栅层设置在有源层和调谐层之间，衍射光栅层的折射率沿着光学谐振器方向周期性地改变。 第一电极向有源层提供电流。 第二电极向调谐层提供独立于待提供给有源层的电流的电流。 提供一种TTG-DFB激光器，可以保持适当的耦合系数，并具有适用于通信光源的特性。
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