Abstract:
A circuit includes a high-side switch and a low-side switch. A first inverter includes first and second discharge current paths activatable to sink first and second discharge currents, respectively, from the control terminal of the high-side switch. A second inverter includes first and second charge current paths activatable to source first and second charge currents to the control terminal of the low-side switch. A high-side sensing current path includes an intermediate high-side control node, and a low-side sensing current path includes an intermediate low-side control node. The second discharge current path is selectively enablable in response to a high-side detection signal at the intermediate high-side control node having a high logic value, and the second charge current path is selectively enablable in response to a low-side detection signal at the intermediate low-side control node having a low logic value.
Abstract:
An embodiment buck converter control circuit comprises an error amplifier configured to generate an error signal based on a feedback signal and a reference signal, a pulse generator circuit configured to generate a pulsed signal having switching cycles set to high and low as a function of the error signal, a driver circuit configured to generate a drive signal for an electronic switch of the buck converter as a function of the pulsed signal, a variable load, connected between two output terminals of the buck converter, configured to absorb a current based on a control signal, and a detector circuit configured to monitor a first signal indicative of an output current provided by the buck converter and a second signal indicative of a negative transient of the output current, and verify whether the second signal indicates a negative transient of the output current.
Abstract:
A packaged MEMS transducer device comprising: a die, including: a semiconductor body having a front side and a back side, opposite to one another in a first direction, at least one cavity extending through the semiconductor body between the front side and the back side, and at least one membrane extending on the front side at least partially suspended over the cavity; and a package designed to house the die on an inner surface thereof. The transducer device moreover includes a sealing layer extending on the back side of the semiconductor body for sealing the cavity, and includes a paste layer extending between the sealing layer and the inner surface of the package for firmly coupling the die to the package.
Abstract:
An embodiment for encoding digital images includes: partitioning the images into image blocks, subjecting the image blocks to transform into the frequency domain, and, possibly after thresholding resulting in lossy encoding, subjecting the image blocks transformed into the frequency domain to variable length coding to produce compressed encoded image blocks. Transform into the frequency domain may be, e.g., via wavelet transform, such as Haar wavelet transform, and variable length coding may be via Exponential-Golomb codes. An embodiment may also be adapted for transferring picture data over a bus in a system such as, e.g., a System-on-Chip (SoC) by generating compressed encoded image blocks for transfer over the bus and decoding compressed encoded image blocks transferred over the bus.
Abstract:
An embodiment of a motor controller includes first and second supply nodes, a motor-coil node, an isolator, a motor driver, and a motor position signal generator. The isolator is coupled between the first and second supply nodes, and the motor driver is coupled to the second supply node and to the motor-coil node. The motor position signal generator is coupled to the isolator and is operable to generate, in response to the isolator, a motor-position signal that is related to a position of a motor having at least one coil coupled to the motor-coil node. By generating the motor-position signal in response to the isolator, the motor controller or another circuit may determine the at-rest or low-speed position of a motor without using an external coil-current-sense circuit.
Abstract:
An integrated magnetic sensor formed by a semiconductor chip having a surface and accommodating a magnetic via and a sensing coil. The magnetic via is formed by a cylindrical layer of ferromagnetic material that extends perpendicular to the surface of the first chip and has in cross-section an annular shape of a circular or elliptical or curvilinear type. The sensing coil surrounds the magnetic via at a distance and is connected to an electronic circuit.
Abstract:
An embodiment of a method for computing pyramids of input images (I) in a transformed domain, e.g., for search and retrieval purposes, includes:—arranging input images in blocks to produce input image blocks,—subjecting the input image blocks to block processing including: transform into a transformed domain, subjecting the image blocks transformed into a transformed domain to filtering, subjecting the image blocks transformed into a transformed domain and filtered to inverse transform implementing an inverse transform with respect to the previous transform into a transformed domain, thus producing a set of processed blocks. The set of processed blocks, which is recomposeable to an image pyramid, may be used, e.g., in detecting extrema points in images in the pyramid, extracting a patch of given size around the extrema points detected, and processing the patch to obtain local descriptors such as SIFT descriptors of a feature.
Abstract:
A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing, an estimated distance of an object from the array upon the sensing.
Abstract:
A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a body region, which has a second type of conductivity opposite to the first type of conductivity, extends in the drift region, and faces the front side of the semiconductor body; a first control terminal, which extends on the front side of the semiconductor body, at least partially overlapping, in the first direction of extension, the body region; and a second control terminal, which extends to a first depth in the semiconductor body, inside the body region, and is staggered with respect to the first control terminal.
Abstract:
An embodiment of a MOS transistor includes a layer of semiconductor material, drain regions having a first conductivity type alternately formed in the layer with body regions having a second conductivity type, a first insulating layer disposed over the surface of the layer of semiconductor material, at least one gate-precursor region of conductive material disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and the gate-precursor region, a third insulating layer disposed over the second insulating layer, at least one source opening formed by removing overlapping portions of the second insulating layer, the third insulating layer, the gate-precursor region, and by at least partially removing a corresponding portion of the first insulating layer. The embodiment may also include at least one source-precursor region extending into the layer of semiconductor material from a surface portion below the at least one source opening.