公开(公告)号：US07760155B2

公开(公告)日：2010-07-20

申请号：US12035458

申请日：2008-02-22

Applicant: François Dupont ,  Patrick Poveda

Inventor： François Dupont ,  Patrick Poveda

IPC: H01Q1/50 ,  H01P5/00

CPC classification number: H03H7/487

Abstract: A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.

Abstract translation: 包括与电容器串联的半导体结的非定向耦合器，形成半导体结，使得其作为整流器行为的阈值频率小于耦合器的工作频率。

公开(公告)号：US20100158158A1

公开(公告)日：2010-06-24

申请号：US12643489

申请日：2009-12-21

Applicant: Michel Menu ,  Ivan Bourmeyster

Inventor： Michel Menu ,  Ivan Bourmeyster

IPC: H04L27/14

CPC classification number: H03H17/0266 ,  G10L19/0204

Abstract: A signal processor for processing a digital input signal including samples sampled at a sampling frequency, the signal processor comprising a plurality of filters arranged to divide the digital input signal into a first signal in a first frequency band below a first cut-off frequency, and a second signal in a second frequency band above a second cut-off frequency; first frequency shifting circuitry arranged to shift the second signal to a frequency band below the first cut-off frequency; decimation circuitry arranged to decimate the first signal and the shifted second signal; and processing circuitry arranged to process the decimated first and second signals.

Abstract translation: 一种用于处理数字输入信号的信号处理器，所述数字输入信号包括以采样频率采样的采样的样本，所述信号处理器包括多个滤波器，所述多个滤波器布置成将数字输入信号划分成低于第一截止频率的第一频带中的第一信号，以及 在第二截止频率之上的第二频带中的第二信号; 第一频移电路，被布置成将第二信号移位到低于第一截止频率的频带; 抽取电路，被设置为抽取第一信号和移位的第二信号; 以及处理电路，被布置成处理抽取的第一和第二信号。

公开(公告)号：US20100140774A1

公开(公告)日：2010-06-10

申请号：US12629785

申请日：2009-12-02

Applicant: Sebastien Pruvost ,  Laurent Chabert

Inventor： Sebastien Pruvost ,  Laurent Chabert

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/488 ,  H01L23/52

CPC classification number: H01L21/76897 ,  H01L23/485 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/0231 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/80205 ,  H01L2224/80895 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/14 ,  H01L2924/00012

Abstract: External electrical connection pads are provided on a semiconductor device. A well is formed in an outer surface for the semiconductor device to at least partially expose an internal electrical connection pad. An electrical connection tab is formed which has an internal branch extending over the internal pad, an external branch extending over a top of the outer surface and extending from one side edge of the well, and a linking branch extending over a sidewall of the wells between the external branch and the internal branch.

Abstract translation: 外部电连接焊盘设置在半导体器件上。 在半导体器件的外表面中形成阱以至少部分地暴露内部电连接焊盘。 形成电连接接头，其具有在内部焊盘上方延伸的内部分支，外部分支在外表面的顶部延伸并从阱的一个侧边缘延伸，以及在阱的侧壁上延伸的连接分支 外部分支和内部分支。

公开(公告)号：US20100133634A1

公开(公告)日：2010-06-03

申请号：US12695782

申请日：2010-01-28

Applicant: Pierre Caubet ,  Nicolas Casanova

Inventor： Pierre Caubet ,  Nicolas Casanova

IPC: H01L31/0232 ,  H01L23/48

CPC classification number: H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76856

Abstract: A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.

Abstract translation: 半导体产品包括由铜制成的部分，由电介质制成的部分和在铜部分和电介质部分之间的自对准势垒。 自对准势垒包括主要包含第一铜硅化物分子的第一铜硅化物层和主要包含第二硅化铜分子的第二铜硅化物层。 第二硅化物分子中硅原子数的比例高于第一硅化物分子中的比例。 第二硅化铜层位于铜部分和第一铜硅化物层之间。 氮化物层可以覆盖至少部分第一硅化铜层。

公开(公告)号：US07728633B2

公开(公告)日：2010-06-01

申请号：US11787885

申请日：2007-04-18

Applicant: Laurent Moindron

Inventor： Laurent Moindron

IPC: H03K5/22

CPC classification number: G01R19/1659 ,  G01R19/175 ,  G01R31/42

Abstract: A window comparator of an A.C. input voltage, including, between two terminals of application of a voltage representative of the voltage to be measured, two first transistors of a first type, each first transistor being assembled as a current mirror on the second transistor having a first conduction terminal connected to one of the application terminals, the two second transistors having a second common conduction terminal; and two third transistors of a second type assembled as a current mirror between the common conduction terminal of the second transistors and a current source, a D.C. voltage being applied on a first terminal of the current source and an output signal being provided by a second terminal of the current source.

Abstract translation: 一种交流输入电压的窗口比较器，包括在两个端子之间施加代表待测电压的电压，第一类型的两个第一晶体管，每个第一晶体管被组装成具有第二晶体管的电流镜， 第一导电端子连接到应用端子之一，所述两个第二晶体管具有第二共用导通端子; 以及第二类型的两个第三晶体管，其被组装为第二晶体管的公共导通端与电流源之间的电流镜，施加在电流源的第一端上的直流电压和由第二端提供的输出信号 的当前来源。

公开(公告)号：US07718473B2

公开(公告)日：2010-05-18

申请号：US11643444

申请日：2006-12-21

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L21/332 ,  H01L29/74

CPC classification number: H03K17/723 ,  H01L29/0692 ,  H01L29/747

Abstract: An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two independent gate regions intended to be respectively connected to terminals of a transformer having a midpoint connected to the rear surface terminal of the component.

Abstract translation: 这种类型的HF控制双向开关组件，其门以基部构成的外表面的前表面形成，包括两个独立的栅极区域，分别连接到具有中点的变压器的端子 连接到部件的后表面端子。

公开(公告)号：US07715486B2

公开(公告)日：2010-05-11

申请号：US11711145

申请日：2007-02-26

Applicant: Olivier Isson ,  Fabrice Belveze ,  Fatima Aourik

Inventor： Olivier Isson ,  Fabrice Belveze ,  Fatima Aourik

IPC: H04K1/10 ,  H04L27/28

CPC classification number: H04L25/0232 ,  H04L27/2647

Abstract: A method of COFDM demodulation of successive symbols, each symbol comprising data carriers and pilots. The method includes, for each symbol, the determination of estimates of the transfer function of the channel for the symbol carriers, including the steps of determining, for first carriers such that, for the frequency positions of the considered carriers, symbols different from the symbol include pilots, a first estimate based on second estimates obtained for pilots having the frequency of the carrier; and determining, for second carriers, a third estimate based on the first estimates. For at least one first carrier, the first estimate is further determined based on at least the third estimate determined for a carrier of a symbol received before the symbol at the same frequency as the carrier.

Abstract translation: 连续符号的COFDM解调方法，每个符号包括数据载体和导频。 该方法包括对于每个符号，确定用于符号载波的信道的传递函数的估计，包括以下步骤：对于第一载波，对于所考虑的载波的频率位置，不同于符号的符号 包括导频，基于对具有载波频率的导频获得的第二估计的第一估计; 以及针对第二运营商，基于所述第一估计来确定第三估计。 对于至少一个第一载波，基于至少针对在与载波相同频率的符号之前接收到的符号的载波确定的第三估计进一步确定第一估计。

公开(公告)号：US20100102206A1

公开(公告)日：2010-04-29

申请号：US12606139

申请日：2009-10-26

Applicant: Yvon Cazaux ,  Jérôme Vaillant

Inventor： Yvon Cazaux ,  Jérôme Vaillant

IPC: H01L31/101 ,  H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14652

Abstract: A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.

Abstract translation: 一种在第一导电类型的轻掺杂衬底中以整体形式制成的近红外/彩色光电探测器，其覆盖保持器并且包括在与保持器相对的一侧上的面。 光电检测器至少包括用于存储在基板中产生的电荷的第一和第二光电二极管，第二光电二极管与所述面相邻; 以及至少在所述第二光电二极管和所述保持器之间延伸的第一区域，防止所述电荷在位于所述区域和所述保持器之间的第一衬底部分之间通过，以及在所述面和所述第一区域之间延伸的第二衬底部分， 光电二极管适于至少存储在第一衬底部分中产生的电荷，第二光电二极管适于存储在第二衬底部分中产生的电荷。

公开(公告)号：US07704630B2

公开(公告)日：2010-04-27

申请号：US11529637

申请日：2006-09-28

Applicant: Sébastien Kouassi

Inventor： Sébastien Kouassi

IPC: H01M4/00

CPC classification number: C25F3/12 ,  B81B1/00 ,  C25F3/14 ,  H01M8/0232 ,  H01M8/1097 ,  H01M2008/1095

Abstract: A support wafer made of silicon wafer comprising, on a first surface a porous silicon layer having protrusions, porous silicon pillars extending from the porous silicon layer to the second surface of the wafer, in front of each protrusion. Layers constituting a fuel cell can be formed on the support wafer.

Abstract translation: 一种由硅晶片制成的支撑晶片，在第一表面上具有多孔硅层，该多孔硅层具有突起，在每个突出部前面从多孔硅层延伸到晶片的第二表面。 可以在支撑晶片上形成构成燃料电池的层。

公开(公告)号：US20100097843A1

公开(公告)日：2010-04-22

申请号：US12641789

申请日：2009-12-18

Applicant: Michel Bardouillet ,  Pierre Rizzo ,  Alexandre Malherbe ,  Luc Wuidart

Inventor： Michel Bardouillet ,  Pierre Rizzo ,  Alexandre Malherbe ,  Luc Wuidart

IPC: G11C11/00 ,  G11C7/00

CPC classification number: H03K3/356008 ,  G11C14/00 ,  G11C17/16 ,  G11C17/18

Abstract: An integrated cell and method for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.

Abstract translation: 一种用于基于两个电阻值之间的值差提取二进制值的集成单元和方法，包括用于二进制读取电阻之间的差异的符号的连接电路和用于修改电阻之一的值的连接电路 电阻使得差异的符号不变。