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    High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
    41.
    发明申请
    High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
    用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法

    公开(公告)号：US20090108383A1

    公开(公告)日：2009-04-30

    申请号：US11981127

    申请日：2007-10-31

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.

    摘要翻译： 公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。 当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nmx200 nm椭圆形STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

    Method of magnetic tunneling junction pattern layout for magnetic random access memory
    42.
    发明申请
    Method of magnetic tunneling junction pattern layout for magnetic random access memory 有权
    磁性随机存取存储器磁隧道结图案布局方法

    公开(公告)号：US20080225576A1

    公开(公告)日：2008-09-18

    申请号：US11724435

    申请日：2007-03-15

    申请人： Tom Zhong ,  Terry Kin Ting Ko ,  Chyu-Jiuh Torng ,  Wai-Ming Kan ,  Adam Zhong

    发明人： Tom Zhong ,  Terry Kin Ting Ko ,  Chyu-Jiuh Torng ,  Wai-Ming Kan ,  Adam Zhong

    IPC分类号： G11C11/00

    CPC分类号： H01L27/222 ,  H01L43/12 ,  Y10S977/935

    摘要： An MTJ pattern layout for a memory device is disclosed that includes two CMP assist features outside active MTJ device blocks. A first plurality of dummy MTJ devices is located in two dummy bands formed around an active MTJ device block. The inner dummy band is separated from the outer dummy band by the MTJ ILD layer and has a MTJ device density essentially the same as the MTJ device block. The outer dummy band has a MTJ device density at least 10% greater than the inner dummy band. The inner dummy band serves to minimize CMP edge effect in the MTJ device block while the outer dummy band improves planarization. A second plurality of dummy MTJ devices is employed in contact pads outside the outer dummy band and is formed between a WL ILD layer and a BIT ILD layer thereby minimizing delamination of the MTJ ILD layer.

    摘要翻译： 公开了一种用于存储器件的MTJ图案布局，其包括主动MTJ器件块之外的两个CMP辅助特征。 第一组多个虚拟MTJ设备位于形成在活动MTJ设备块周围的两个虚拟带中。 内部虚拟带通过MTJ ILD层与外部虚拟带分离，并且具有与MTJ器件块基本相同的MTJ器件密度。 外虚拟带具有比内虚拟带大至少10％的MTJ装置密度。 内部虚拟带用于最小化MTJ器件块中的CMP边缘效应，而外部虚拟带改善了平坦化。 在外虚拟带外部的接触焊盘中采用第二多个虚拟MTJ器件，并且形成在WL ILD层和BIT ILD层之间，从而最小化MTJ ILD层的分层。

    Novel seed layer for fabricating spin valve heads for ultra-high density recordings
    44.
    发明申请
    Novel seed layer for fabricating spin valve heads for ultra-high density recordings 有权
    用于制造用于超高密度记录的自旋阀头的新型种子层

    公开(公告)号：US20070223151A1

    公开(公告)日：2007-09-27

    申请号：US11804241

    申请日：2007-05-17

    申请人： Cheng Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    发明人： Cheng Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/127

    CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

    摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

    摘要翻译： 一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

    Robust protective layer for MTJ devices
    45.
    发明申请
    Robust protective layer for MTJ devices 审中-公开
    坚固的MTJ设备保护层

    公开(公告)号：US20070080381A1

    公开(公告)日：2007-04-12

    申请号：US11248965

    申请日：2005-10-12

    申请人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    发明人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    IPC分类号： H01L29/94

    CPC分类号： H01L43/12 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/08

    摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.

    摘要翻译： 当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。 通过用双层层压板保护MTJ的侧壁已经克服了这个问题。 第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。 这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

    Novel hard bias design for sensor applications
    48.
    发明申请
    Novel hard bias design for sensor applications 有权
    传感器应用的新型硬偏置设计

    公开(公告)号：US20060132988A1

    公开(公告)日：2006-06-22

    申请号：US11016506

    申请日：2004-12-17

    申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032

    摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

    摘要翻译： 用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成， 或刚性交换耦合以确保良好对准的/SUB>Pt16.2 或Co 15 Cr 15 纵向偏置方向最小分散。 在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。 可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H C，M L t和S的最大化的厚度 价值观。 本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。 实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了读操作期间较低的不对称输出和NBLW废弃率。