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    LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME
    43.
    发明公开
    LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME 审中-公开

    公开(公告)号：US20230255034A1

    公开(公告)日：2023-08-10

    申请号：US17650084

    申请日：2022-02-07

    Applicant: GlobalFoundries Singapore Pte. Ltd.

    Inventor： DESMOND JIA JUN LOY ,  ENG HUAT TOH ,  SHYUE SENG TAN

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2472 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/16

    Abstract: The disclosed subject matter relates generally to structures, memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices having two resistive layers and a conductive layer arranged between two electrodes. The present disclosure provides a memory device including a first electrode above an interlayer dielectric region, a second electrode above the interlayer dielectric region, the second electrode is laterally adjacent to the first electrode, a conductive layer between the first electrode and the second electrode, in which the conductive layer is electrically isolated, a first resistive layer between the first electrode and the conductive layer, and a second resistive layer between the second electrode and the conductive layer.

    GALVANIC ISOLATION USING ISOLATION BREAK BETWEEN REDISTRIBUTION LAYER ELECTRODES
    45.
    发明公开
    GALVANIC ISOLATION USING ISOLATION BREAK BETWEEN REDISTRIBUTION LAYER ELECTRODES 审中-公开

    公开(公告)号：US20230197776A1

    公开(公告)日：2023-06-22

    申请号：US17644626

    申请日：2021-12-16

    Applicant: GlobalFoundries Singapore Pte. Ltd.

    Inventor： Bong Woong Mun ,  Wanbing Yi ,  Juan Boon Tan ,  Jeoung Mo Koo

    IPC: H01L29/06 ,  H01L23/14 ,  H01L23/528 ,  H01L21/762

    CPC classification number: H01L29/0649 ,  H01L23/147 ,  H01L23/528 ,  H01L21/76224

    Abstract: A structure includes a galvanic isolation including a horizontal portion including a first redistribution layer (RDL) electrode in a first insulator layer, and a second RDL electrode in the first insulator layer laterally spaced from the first RDL electrode. An isolation break includes a trench defined in the first insulator layer between the first RDL electrode and the second RDL electrode, and at least one second insulator layer in the trench. The first insulator layer and the second insulator layer(s) are between the first RDL electrode and the second RDL electrode. The isolation may separate, for example, voltage domains having different voltage levels. A related method is also disclosed. The isolation may also include a vertical portion using the first RDL electrode and another electrode in a metal layer separated from the first RDL electrode by a plurality of interconnect dielectric layers.

    Memory cells and methods for forming memory cells
    49.
    发明授权
    Memory cells and methods for forming memory cells 有权

    公开(公告)号：US11641789B2

    公开(公告)日：2023-05-02

    申请号：US17355260

    申请日：2021-06-23

    Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

    Inventor： Yi Jiang ,  Benfu Lin ,  Lup San Leong ,  Curtis Chun-I Hsieh ,  Wanbing Yi ,  Juan Boon Tan

    IPC: H10N70/00 ,  H01L45/00 ,  H01L27/24

    Abstract: According to various embodiments, there is provided a memory cell. The memory cell may include a transistor, a dielectric member, an electrode and a contact member. The dielectric member may be disposed over the transistor. The electrode may be disposed over the dielectric member. The contact member has a first end and a second end opposite to the first end. The first end is disposed towards the transistor, and the second end is disposed towards the dielectric member. The contact member has a side surface extending from the first end to the second end. The second end may have a recessed end surface that has a section that slopes towards the side surface so as to form a tip with the side surface at the second end. The dielectric member may be disposed over the second end of the contact member and may include at least a portion disposed over the tip.

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