公开(公告)号：US20080173859A1

公开(公告)日：2008-07-24

申请号：US12000716

申请日：2007-12-17

Applicant: Ji-hyun Hur ,  Yoon-ho Khang ,  Hyo-sug Lee ,  Hyuk-soon Choi ,  Jai-kwang Shin ,  Jae-joon Oh

Inventor： Ji-hyun Hur ,  Yoon-ho Khang ,  Hyo-sug Lee ,  Hyuk-soon Choi ,  Jai-kwang Shin ,  Jae-joon Oh

IPC: H01L47/00

CPC classification number: G11C13/0004 ,  G11C11/5678 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/1675

Abstract: A storage node, phase change memory device having a storage node, a method of fabricating the phase change memory device and a method of operating the phase change memory device are provided. The phase change memory device includes a switching device and a storage node connecting to the switching device. The storage node includes a bottom electrode, a phase change layer formed on the bottom electrode, a material layer formed on the phase change layer and a top electrode formed on the phase change layer around the material layer.

Abstract translation: 提供了具有存储节点的存储节点，相变存储器件，制造相变存储器件的方法和操作相变存储器件的方法。 相变存储器件包括连接到开关器件的开关器件和存储节点。 存储节点包括底电极，形成在底电极上的相变层，形成在相变层上的材料层和形成在材料层周围的相变层上的顶电极。

公开(公告)号：US20070077366A1

公开(公告)日：2007-04-05

申请号：US11542468

申请日：2006-10-04

Applicant: Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

Inventor： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

IPC: C23C14/00 ,  H05H1/24 ,  G21G5/00

CPC classification number: C23C14/48 ,  H01L21/2236

Abstract: A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.

Abstract translation: 一种使用等离子体将离子掺杂到物体中的方法，包括在第一电极和第二电极之间提供掺杂气体，其中物体设置在第一和第二电极之间，向第一电极施加第一电力并将第二电极接地 将掺杂气体激发到等离子体状态，将离子引向待掺杂的物体，向第二电极施加第二功率并将第一电极接地，并计数朝向第二电极的离子的剂量;以及设备 执行相同。

公开(公告)号：US08816396B2

公开(公告)日：2014-08-26

申请号：US13222322

申请日：2011-08-31

Applicant: In-jun Hwang ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong ,  Jai-kwang Shin ,  Jae-joon Oh

Inventor： In-jun Hwang ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong ,  Jai-kwang Shin ,  Jae-joon Oh

IPC: H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

Abstract: According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括衬底，衬底上的缓冲层，缓冲层上的沟道层以及沟道层上的势垒结构。 缓冲层包括二维电子气（2DEG）。 势垒结构的极化在对应于栅电极的区域中变化。 HEMT还包括栅电极，源电极和屏障结构上的漏电极。

公开(公告)号：US08803565B2

公开(公告)日：2014-08-12

申请号：US13064264

申请日：2011-03-15

Applicant: Ho-jung Kim ,  Jae-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

Inventor： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

IPC: H03K17/16

CPC classification number: H03K17/163 ,  H03K17/284

Abstract: A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.

Abstract translation: 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。

公开(公告)号：US08796737B2

公开(公告)日：2014-08-05

申请号：US13307769

申请日：2011-11-30

Applicant: In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi ,  Ki-ha Hong

Inventor： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi ,  Ki-ha Hong

IPC: H01L29/66 ,  H01L21/338

CPC classification number: H01L29/7787 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462

Abstract: High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a channel layer and a channel supply layer, and the channel supply layer may be a multilayer structure. The channel supply layer may include an etch stop layer and an upper layer on the etch stop layer. A recess region may be in the upper layer. The recess region may be a region recessed to an interface between the upper layer and the etch stop layer. A gate electrode may be on the recess region.

Abstract translation: 高电子迁移率晶体管（HEMT）及其制造方法。 HEMT可以包括沟道层和沟道供应层，并且沟道供应层可以是多层结构。 沟道供应层可以包括蚀刻停止层和蚀刻停止层上的上层。 凹部区域可以在上层。 凹陷区域可以是凹陷到上层和蚀刻停止层之间的界面的区域。 栅电极可以在凹陷区域上。

公开(公告)号：US08263449B2

公开(公告)日：2012-09-11

申请号：US13017361

申请日：2011-01-31

Applicant: Ki-ha Hong ,  U-In Chung ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang

Inventor： Ki-ha Hong ,  U-In Chung ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang

IPC: H01L21/338

CPC classification number: H01L29/402 ,  H01L29/0891 ,  H01L29/66462 ,  H01L29/7786

Abstract: A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.

Abstract translation: 制造高电子迁移率晶体管（HEMT）的方法可以包括在衬底上形成具有不同晶格常数的第一和第二材料层，在第二材料层上形成源极，漏极和栅极，以及改变第二材料层 在栅极和漏极之间形成不同的材料层，或改变第二材料层的厚度，或在第二材料层上形成p型半导体层。 第二材料层的变化可以在栅极和漏极之间的第二材料层的整个区域中发生，或者仅在与栅极相邻的第二材料层的部分区域中发生。 p型半导体层可以形成在栅极和漏极之间的第二材料层的整个顶表面上，或者仅形成在与栅极相邻的顶表面的部分区域上。

公开(公告)号：US20110215378A1

公开(公告)日：2011-09-08

申请号：US12929492

申请日：2011-01-28

Applicant: In-Jun Hwang ,  Jong-Seob Kim ,  Hyuk-Soon Choi ,  Ki-Ha Hong ,  Jai-Kwang Shin ,  Jae-Joon Oh

Inventor： In-Jun Hwang ,  Jong-Seob Kim ,  Hyuk-Soon Choi ,  Ki-Ha Hong ,  Jai-Kwang Shin ,  Jae-Joon Oh

IPC: H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7786

Abstract: High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

Abstract translation: 表现出双重缺陷的高电子迁移率晶体管（HEMT）及其制造方法。 HEMT包括设置在具有不同极性的多个半导体层上的源电极，栅极电极和漏电极。 在源电极和漏电极之间存在双耗尽区。 多个半导体层包括上材料层，中间材料层和下材料层，并且中间材料层的极性与上材料层和下材料层的极性不同。

公开(公告)号：US07910913B2

公开(公告)日：2011-03-22

申请号：US12000641

申请日：2007-12-14

Applicant: Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

Inventor： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

IPC: H01L47/00

CPC classification number: H01L45/1246 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  Y10T29/49002

Abstract: A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

Abstract translation: 相变存储器件包括开关器件和连接到开关器件的存储节点。 存储节点包括底部堆叠，设置在底部堆叠上的相变层和设置在相变层上的顶部堆叠。 相变层包括用于增加流过相变层的电流的路径并减小相变存储区的体积的单元。 与底部叠层相对设置的单元的表面的面积大于或等于与相变层接触的底部叠层的表面的面积。

公开(公告)号：US07410552B2

公开(公告)日：2008-08-12

申请号：US11007878

申请日：2004-12-09

Applicant: Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

Inventor： Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/3222 ,  H01J37/32192 ,  H01J37/32678

Abstract: An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.

Abstract translation: 电子回旋共振设备通过在减压环境中将处理气体和微波能量施加到其中具有晶片的真空室中来产生等离子体。 该设备包括安装在真空室的最上端的喇叭天线组件，用于将从高频发生器提供的微波能量辐射到真空室中。 喇叭天线能够在长度方向上伸长和缩回以改变喇叭天线的喇叭角。 该设备设置有固定天线和多个移动天线以配置喇叭天线组件，从而由于移动天线的位移而能够控制喇叭天线中的喇叭角。 因此，能够有效地控制等离子体室内的微波能量的辐射的均匀性。

公开(公告)号：US20050160986A1

公开(公告)日：2005-07-28

申请号：US11007878

申请日：2004-12-09

Applicant: Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

Inventor： Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

IPC: H01L21/3065 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32192 ,  H01J37/32678

Abstract: An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.

Abstract translation: 电子回旋共振设备通过在减压环境中将处理气体和微波能量施加到其中具有晶片的真空室中来产生等离子体。 该设备包括安装在真空室的最上端的喇叭天线组件，用于将从高频发生器提供的微波能量辐射到真空室中。 喇叭天线能够在长度方向上伸长和缩回以改变喇叭天线的喇叭角。 该设备设置有固定天线和多个移动天线以配置喇叭天线组件，从而由于移动天线的位移而能够控制喇叭天线中的喇叭角。 因此，能够有效地控制等离子体室内的微波能量的辐射的均匀性。