公开(公告)号：US20100143233A1

公开(公告)日：2010-06-10

申请号：US12531450

申请日：2008-03-14

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C01B31/24 ,  C01F17/00

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2002/76 ,  C09K3/1409 ,  C09K3/1463

摘要： In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

摘要翻译： 在通过将铈前体溶液与碳酸酯前体溶液混合并进行沉淀反应制备碳酸铈粉末的方法中，其中将碳酸铈控制为具有正交晶体结构，六方晶系结构或正交/六方晶系混合晶体结构 通过使用包含分子式中的至少两个羟基（OH）的至少一种类型的有机溶剂作为铈前体溶液和碳酸酯前体溶液中的任一种或两者的溶剂，并且改变多个碳或羟基（OH ）包括在有机溶剂的分子式中。 该方法可以容易且廉价地获得具有所需晶体结构的碳酸铈粉末，而没有高温高压的危险和需要昂贵的水热合成系统。

公开(公告)号：US07682584B2

公开(公告)日：2010-03-23

申请号：US11598100

申请日：2006-11-13

申请人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

发明人： Myoung Hwan Oh ,  Jun Seok Nho ,  Jong Pil Kim ,  Jang Yul Kim ,  Seung Beom Cho

IPC分类号： C01F17/00

CPC分类号： C01F17/005 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/60 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1463

摘要： Method of preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and subjecting the mixture solution to a precipitation reaction, wherein the concentration of cerium in the cerium precursor solution ranges from 1M to 10M, the molar concentration ratio of the cerium precursor to the carbonate precursor ranges from 1:1 to 1:7, and the cerium precursor solution contains at least one additive selected from the group consisting of carbonate compounds, acrylic compounds, and sulfate ion-containing compounds. The cerium carbonate powder has an orthorhombic crystal structure, a particle size of 0.05 to 1 μm, and an aspect ratio of 1 to 5. Moreover, disclosed are cerium oxide powder prepared from said cerium carbonate powder as a precursor, a preparation method thereof, and a CMP slurry containing said cerium oxide powder as an abrasive.

摘要翻译： 通过将铈前体溶液与碳酸盐前体溶液混合并使混合溶液进行沉淀反应制备碳酸铈粉末的方法，其中铈前体溶液中铈的浓度范围为1M至10M，铈的摩尔浓度比 碳酸酯前体的前体的范围为1:1至1:7，并且铈前体溶液含有至少一种选自碳酸酯化合物，丙烯酸化合物和含硫酸根离子的化合物的添加剂。 碳酸铈粉末具有正交晶体结构，粒径为0.05〜1μm，长径比为1〜5。此外，作为前体的碳酸铈粉末制备的氧化铈粉末，其制备方法， 和含有所述氧化铈粉末作为研磨剂的CMP浆料。

公开(公告)号：US20100062687A1

公开(公告)日：2010-03-11

申请号：US12598666

申请日：2008-04-30

申请人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jun-Seok Nho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： B24B7/20 ,  C09K3/14 ,  C01F17/00

CPC分类号： C01F17/0043 ,  C01F17/005 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/20 ,  C09K3/1454 ,  C09K3/1463

摘要： Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.

摘要翻译： 公开了用于研磨剂的氧化铈粉末; 包括CMP的CMP浆料; 和使用CMP浆料的浅沟槽隔离（STI）工艺。 通过使用具有不同晶体结构的碳酸铈制备的至少两种氧化铈以适当的比例混合，并用作CMP浆料的研磨剂，从而调节CMP浆料的所需抛光性能。 此外，在公开的碳酸铈的制备方法中，可以容易地控制碳酸铈的晶体结构。 基于在研磨剂的氧化铈中发现，改善的研磨性能的种类取决于碳酸铈的晶体结构，从抛光性能，例如氧化硅层的研磨速度，抛光 氮化硅层的速率，氧化硅层和氮化硅层之间的抛光选择性以及WIWNU可以通过使用选自以下的至少两种氧化铈来调节：（i）通过使用制备的氧化铈 （Ce）晶体结构的碳酸铈，（ii）通过使用正交晶体结构的碳酸铈制备的氧化铈，和（iii）通过使用六方晶结晶的碳酸铈制备的氧化铈作为CMP浆料的研磨剂 ，并调节氧化铈的混合比。

公开(公告)号：US20100044625A1

公开(公告)日：2010-02-25

申请号：US12312601

申请日：2007-11-20

申请人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

发明人： Jun-Seok Nho ,  Myoung-Hwan Oh ,  Seung-Beom Cho ,  Jong-Pil Kim ,  Jang-Yul Kim

IPC分类号： C01F17/00 ,  B32B5/16 ,  C09K13/00

CPC分类号： C09G1/02 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C09K3/1409 ,  H01L21/31053 ,  Y10T428/2982

摘要： Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 μm. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.

摘要翻译： 公开了一种通过以下步骤直接制备氧化铈粉末的方法：a）将铈前体溶液与沉淀剂溶液混合以引起反应; 和b）对反应溶液进行氧化处理，其中使用至少一种不含水的纯有机溶剂作为铈前体溶液的溶剂以及沉淀剂溶液，从而制备氧化铈粉末，其粒度 调整为50nm〜3μm。 还公开了由该方法获得的氧化铈粉末和包含氧化铈粉末作为抛光剂的CMP浆料。 该方法可以通过在湿沉淀法中使用有机溶剂作为溶剂来制备平均粒径为50nm以上的高结晶度的氧化铈粉末，这在常规的湿法沉淀法难以制备， 并且如此制备的氧化铈粉末即使不经过单独的热处理也可用作CMP浆料的抛光剂。

公开(公告)号：US20060255413A1

公开(公告)日：2006-11-16

申请号：US11488239

申请日：2006-07-18

申请人： Myoung-hwan Oh ,  Young-gun Ko

发明人： Myoung-hwan Oh ,  Young-gun Ko

IPC分类号： H01L29/76

CPC分类号： H01L29/6653 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7835

摘要： Provided are a highly integrated semiconductor device with a silicide layer, which can secure a contact margin, and a method of manufacturing the highly integrated semiconductor device. The highly integrated semiconductor device includes a gate electrode formed on a semiconductor substrate. A source region and a drain region are formed in predetermined upper portions of the semiconductor substrate on two sides of the gate electrode such that each of the source region and the drain region includes a lightly doped drain (LDD) region and a heavily doped region. A silicide layer is formed on the gate electrode, the source region, and the drain region. The silicide layer has a sufficient thickness to function as an ohmic contact and is formed on the LDD region and the heavily doped region of each of the source region and the drain region.

摘要翻译： 提供了一种具有硅化物层的高度集成的半导体器件，其可以确保接触边缘，以及制造高度集成的半导体器件的方法。 高度集成的半导体器件包括形成在半导体衬底上的栅电极。 源极区域和漏极区域形成在栅极电极的两侧的半导体衬底的预定上部中，使得源极区域和漏极区域中的每一个包括轻掺杂漏极（LDD）区域和重掺杂区域。 在栅电极，源极区和漏极区上形成硅化物层。 硅化物层具有足够的厚度以用作欧姆接触，并且形成在LDD区域和源极区域和漏极区域中的每一个的重掺杂区域上。

公开(公告)号：US20050040472A1

公开(公告)日：2005-02-24

申请号：US10862996

申请日：2004-06-08

申请人： Myoung-hwan Oh ,  Young-gun Ko

发明人： Myoung-hwan Oh ,  Young-gun Ko

IPC分类号： H01L21/28 ,  H01L21/24 ,  H01L21/336 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/6653 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7835

摘要： Provided are a highly integrated semiconductor device with a silicide layer, which can secure a contact margin, and a method of manufacturing the highly integrated semiconductor device. The highly integrated semiconductor device includes a gate electrode formed on a semiconductor substrate. A source region and a drain region are formed in predetermined upper portions of the semiconductor substrate on two sides of the gate electrode such that each of the source region and the drain region includes a lightly doped drain (LDD) region and a heavily doped region. A suicide layer is formed on the gate electrode, the source region, and the drain region. The silicide layer has a sufficient thickness to function as an ohmic contact and is formed on the LDD region and the heavily doped region of each of the source region and the drain region.

摘要翻译： 提供了一种具有硅化物层的高度集成的半导体器件，其可以确保接触边缘，以及制造高度集成的半导体器件的方法。 高度集成的半导体器件包括形成在半导体衬底上的栅电极。 源极区域和漏极区域形成在栅极电极的两侧的半导体衬底的预定上部中，使得源极区域和漏极区域中的每一个包括轻掺杂漏极（LDD）区域和重掺杂区域。 在栅极电极，源极区域和漏极区域上形成硅化物层。 硅化物层具有足够的厚度以用作欧姆接触，并且形成在LDD区域和源极区域和漏极区域中的每一个的重掺杂区域上。

公开(公告)号：US06737706B2

公开(公告)日：2004-05-18

申请号：US10114215

申请日：2002-04-02

申请人： Tae-jung Lee ,  Byung-sun Kim ,  Myoung-hwan Oh ,  Seung-han Yoo ,  Myung-sun Shin ,  Sang-wook Park

发明人： Tae-jung Lee ,  Byung-sun Kim ,  Myoung-hwan Oh ,  Seung-han Yoo ,  Myung-sun Shin ,  Sang-wook Park

IPC分类号： H01L2701

CPC分类号： H01L29/66772 ,  H01L21/76264 ,  H01L21/76283 ,  H01L29/78615 ,  H01L29/78636

摘要： A silicon-on-insulator (SOI) device and a method for manufacturing the same includes a substrate, which includes a base layer, a buried oxide layer, and a semiconductor layer, and an isolation layer which is formed in a trench that defines an active region on the semiconductor layer. The trench comprises a first region having a depth smaller than the thickness of the semiconductor layer and a second region having a depth as much as the thickness of the semiconductor layer. The isolation layer includes an oxide layer and a nitride liner that are sequentially formed along the surface of the trench and a dielectric layer that fills the trench.

摘要翻译： 绝缘体上硅（SOI）器件及其制造方法包括：衬底，其包括基底层，掩埋氧化物层和半导体层;以及隔离层，其形成在沟槽中，所述沟槽限定 半导体层上的有源区。 沟槽包括深度小于半导体层的厚度的第一区域和具有与半导体层的厚度一样多的深度的第二区域。 隔离层包括沿着沟槽的表面依次形成的氧化物层和氮化物衬垫以及填充沟槽的电介质层。