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    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures
    41.
    发明授权
    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures 有权
    用于制造半导体，MEMS和微结构的保护薄膜

    公开(公告)号：US08987029B2

    公开(公告)日：2015-03-24

    申请号：US13286635

    申请日：2011-11-01

    申请人： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    发明人： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    IPC分类号： H01L21/00 ,  B81C1/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/312

    CPC分类号： H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

    摘要： A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

    摘要翻译： 一种在制造半导体MEMS器件期间保护衬底的方法。 该方法包括施加通常具有3埃至约1,000埃厚度的保护薄膜，其中用于沉积保护薄膜的前体材料是基于有机的前体，其包括至少一个含氟官能团 碳骨架的末端和在碳骨架的相对端处的至少一个功能性结合基团，并且其中所述碳骨架的长度为4个碳至约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

    Durable conformal wear-resistant carbon-doped metal oxide-comprising coating
    42.
    发明授权
    Durable conformal wear-resistant carbon-doped metal oxide-comprising coating 有权
    耐磨保形耐磨碳掺杂金属氧化物涂层

    公开(公告)号：US08900695B2

    公开(公告)日：2014-12-02

    申请号：US12072086

    申请日：2008-02-22

    申请人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

    IPC分类号： H01L21/316 ,  C23C16/40 ,  C23C16/455 ,  B81B3/00

    CPC分类号： C09D1/00 ,  B81B3/0075 ,  C08K3/04 ,  C08K3/22 ,  C08K2003/2227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525

    摘要： The present invention is related to carbon-doped metal oxide films. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films applied over a silicon substrate, for example, provide anti-stiction properties, where the measured work of adhesion for a MEMS device cantilever beam coated with the carbon-doped metal oxide film is less than 10 μJ/m2. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

    摘要翻译： 本发明涉及碳掺杂金属氧化物膜。 碳掺杂的金属氧化物膜提供低摩擦系数，例如约0.05至约0.4。 此外，施加在硅衬底上的碳掺杂的金属氧化物膜例如提供抗静电性质，其中测量的涂覆有碳掺杂金属氧化物膜的MEMS器件悬臂梁的粘附力小于10 μJ/ m2。 此外，掺杂碳的金属氧化物膜提供出乎意料的良好的水蒸汽透过性能。 碳掺杂的金属氧化物膜中的碳含量为约5原子％至约20原子％。

    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures
    45.
    发明授权
    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures 有权
    用于制造半导体，MEMS和微结构的保护薄膜

    公开(公告)号：US08067258B2

    公开(公告)日：2011-11-29

    申请号：US11447186

    申请日：2006-06-05

    申请人： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    发明人： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

    摘要： A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

    摘要翻译： 一种在制造半导体，MEMS或生物技术设备期间保护衬底的方法。 该方法包括施加通常具有约3至约1000的厚度的保护性薄膜，其中用于沉积保护性薄膜的前体材料是有机基前体，其包括至少一个含氟官能团 碳骨架的一端和在碳骨架的相对端处的至少一个功能键合基团，其中碳骨架的长度为4个碳到约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

    High aspect ratio performance coatings for biological microfluidics
    47.
    发明授权
    High aspect ratio performance coatings for biological microfluidics 有权
    用于生物微流体的高纵横比性能涂料

    公开(公告)号：US07879396B2

    公开(公告)日：2011-02-01

    申请号：US11048513

    申请日：2005-01-31

    申请人： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

    发明人： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak ,  Richard C. Yi

    IPC分类号： C23C16/00

    CPC分类号： C23C16/402 ,  B05D1/185 ,  B05D1/60 ,  B05D5/04 ,  B05D7/22 ,  B05D7/222 ,  B05D2254/04 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/045 ,  Y10T29/49432 ,  Y10T428/1383 ,  Y10T436/11

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物技术功能器件，生物MEMS装置以及用于生物应用的微流体装置的制造。 在一个重要的实施方案中，提供亲水性的氧化物涂层或提供亲水性的氧化物/聚乙二醇涂层可以通过本方法在塑料微板的小孔的内表面上沉积，以增加这些孔的亲水性。 用一定量的液体填充这些通道可能非常困难。 这样可以防止水性样品卷入并产生气泡，从而可以精确和完全地填充，并减轻溢出到其他导致污染的孔中。

    Method of in-line purification of CVD reactive precursor materials
    48.
    发明授权
    Method of in-line purification of CVD reactive precursor materials 有权
    CVD反应性前体材料的在线纯化方法

    公开(公告)号：US07687110B2

    公开(公告)日：2010-03-30

    申请号：US11903397

    申请日：2007-09-20

    申请人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn ,  Richard C. Yi

    发明人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn ,  Richard C. Yi

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4402

    摘要： We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.

    摘要翻译： 我们已经设计了一种可用于从用于产生反应性前体蒸气的气态前体组合物中除去杂质的装置，其中在大气下条件下形成薄膜/层。 当层沉积设备在单一步骤期间提供量的不同组合的反应物的精确添加时或当层形成过程中存在多个不同的单独步骤时，该方法是特别有用的，其中杂质的存在具有显着的影响 在被充电的反应物的量和沉积层的反应物混合物的总体组成。 当液体反应性前体的蒸气压在大气压下小于约250乇时，该方法特别有用。

    Controlled deposition of silicon-containing coatings adhered by an oxide layer
    49.
    发明申请
    Controlled deposition of silicon-containing coatings adhered by an oxide layer 有权
    由氧化物层附着的含硅涂层的控制沉积

    公开(公告)号：US20100075034A1

    公开(公告)日：2010-03-25

    申请号：US12592183

    申请日：2009-11-19

    申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    IPC分类号： C23C16/52

    CPC分类号： B82Y30/00 ,  C23C16/0227 ,  C23C16/402

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

    Vapor deposited functional organic coatings deposited on a halogen-containing substrate
    50.
    发明申请
    Vapor deposited functional organic coatings deposited on a halogen-containing substrate 审中-公开
    沉积在含卤素基质上的气相沉积的功能性有机涂层

    公开(公告)号：US20080274281A1

    公开(公告)日：2008-11-06

    申请号：US12074497

    申请日：2008-03-03

    申请人： Boris Kobrin ,  William R. Ashurst ,  Jeffrey D. Chinn ,  Romuald Nowak

    发明人： Boris Kobrin ,  William R. Ashurst ,  Jeffrey D. Chinn ,  Romuald Nowak

    IPC分类号： C23C16/00

    CPC分类号： C23C16/0272 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/56

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the attachment of organic films/coatings containing a variety of functional groups on halogen-containing substrates. The substrate surface is halogenated using a vaporous halogen-containing compound, followed by a reaction with at least one organic molecule containing at least one nucleophilic functional group. Halogenation of the substrate surface and subsequent reaction with the organic molecule are carried out in the same process chamber in a manner such that the halogenated substrate surface does not lose its functionality prior to reaction with the nucleophilic functional group(s) on the organic molecule.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在含卤基底上附着含有各种官能团的有机膜/涂层。 使用含卤素的化合物将底物表面卤化，随后与至少一个含有至少一个亲核官能团的有机分子反应。 底物表面的卤化和随后与有机分子的反应在相同的处理室中进行，使得卤化的底物表面在与有机分子上的亲核官能团反应之前不失去其功能。