公开(公告)号：US08669163B2

公开(公告)日：2014-03-11

申请号：US12898421

申请日：2010-10-05

Applicant: Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

Inventor： Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

IPC: H01L21/336

CPC classification number: H01L29/7391 ,  H01L21/26586

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.

Abstract translation: 半导体器件包括沟道区; 沟道区上的栅极电介质; 位于栅极电介质上的栅电极; 以及与栅极电介质相邻的第一源极/漏极区域。 第一源极/漏极区域是第一导电类型。 沟道区域和第一源极/漏极区域中的至少一个包括超晶格结构。 所述半导体器件还包括与所述第一源极/漏极区域相比在所述沟道区域的相对侧上的第二源极/漏极区域。 第二源极/漏极区域是与第一导电类型相反的第二导电类型。 最多，第一源极/漏极区域和第二源极/漏极区域中的一个包括附加的超晶格结构。

公开(公告)号：US08569146B2

公开(公告)日：2013-10-29

申请号：US13013296

申请日：2011-01-25

Applicant: Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

Inventor： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

IPC: H01L21/76

CPC classification number: H01L21/823878 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7846 ,  H01L29/7848

Abstract: A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region.

Abstract translation: 公开了用于形成用于应变通道晶体管的改进的隔离结构的方法和系统。 在一个示例中，形成包括填充有含氮衬里和间隙填料的沟槽的隔离结构。 含氮衬垫使隔离结构能够减小对通道区域的压应变贡献。

公开(公告)号：US20130269778A1

公开(公告)日：2013-10-17

申请号：US13445997

申请日：2012-04-13

Applicant: Hsuan-Sheng YANG ,  Wen-Chin LEE ,  Li-Huan ZHU

Inventor： Hsuan-Sheng YANG ,  Wen-Chin LEE ,  Li-Huan ZHU

IPC: H01L31/0264 ,  H01L31/18

CPC classification number: H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for manufacturing a CIGS thin film photovoltaic device includes forming a back contact layer on a substrate, forming an Se-rich layer on the back contact layer, forming a precursor layer on the Se-rich layer by depositing copper, gallium and indium resulting in a first interim structure, annealing or selenizing the first interim structure, thereby forming Cu/Se, Ga/Se or CIGS compounds along the interface between the back contact layer and the precursor layer and resulting in a second interim structure, and selenizing the second interim structure, thereby converting the precursor layer into a CIGS absorber layer on the back contact layer.

Abstract translation: 一种制造CIGS薄膜光伏器件的方法包括在衬底上形成背接触层，在背接触层上形成富硒层，通过沉积铜，镓和铟在富硒层上形成前体层，从而形成 在第一中间结构中，对第一中间结构进行退火或硒化，从而沿着背接触层和前体层之间的界面形成Cu / Se，Ga / Se或CIGS化合物，并产生第二中间结构，并将第二中间结构 从而将前体层转化为背接触层上的CIGS吸收层。

公开(公告)号：US08530263B2

公开(公告)日：2013-09-10

申请号：US13207058

申请日：2011-08-10

Applicant: Wen-Chin Lee ,  Wen-Tsai Yen ,  Liang-Sheng Yu ,  Yung Sheng Chiu

Inventor： Wen-Chin Lee ,  Wen-Tsai Yen ,  Liang-Sheng Yu ,  Yung Sheng Chiu

IPC: H01L21/00 ,  H01L31/00

CPC classification number: H01L31/1864 ,  H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/50

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract translation: 制造太阳能电池的方法包括在衬底上形成前接触层，并且前接触层在特定波长处是光学透明的并且是导电的。 通过前接触层划刻第一划线区域以暴露基板的一部分。 掺杂有n型掺杂剂的缓冲层形成在前接触层和第一划线区上。 在缓冲层上形成掺杂有p型掺杂剂的吸收层。 在吸收层上形成导电的背接触层。

公开(公告)号：US20130118569A1

公开(公告)日：2013-05-16

申请号：US13295148

申请日：2011-11-14

Applicant: Wen-Chin Lee ,  Liang-Sheng Yu ,  Wen-Tsai Yen ,  Yung-Sheng Chiu

Inventor： Wen-Chin Lee ,  Liang-Sheng Yu ,  Wen-Tsai Yen ,  Yung-Sheng Chiu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/0463 ,  Y02E10/541 ,  Y02P70/521

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, a light absorbing semiconductor layer, and top electrode layer. The absorber layer includes a p-type interior region and an n-type exterior region formed around the perimeter of the layer from a modified native portion of the p-type interior region, thereby forming an active n-p junction that is an intrinsic part of the absorber layer. The top electrode layer is electrically connected to the bottom electrode layer via a scribe line formed in the absorber layer that defines sidewalls. The n-type exterior region of the absorber layer extends along both the horizontal top of the absorber layer, and onto the vertical sidewalls of the scribe line to increase the area of available n-p junction in the solar cell thereby improving solar conversion efficiency.

Abstract translation: 薄膜太阳能电池及其形成方法。 太阳能电池包括底部电极层，光吸收半导体层和顶部电极层。 吸收层包括p型内部区域和从p型内部区域的修饰的天然部分围绕该层的周边形成的n型外部区域，从而形成作为p型内部区域的固有部分的活性np结， 吸收层。 顶部电极层通过形成在限定侧壁的吸收体层中的划痕线电连接到底部电极层。 吸收层的n型外部区域沿着吸收层的水平顶部延伸，并且延伸到划线的垂直侧壁上，以增加太阳能电池中可用的n-p结的面积，从而提高太阳能转换效率。

公开(公告)号：US08440158B2

公开(公告)日：2013-05-14

申请号：US12195844

申请日：2008-08-21

Applicant: Cheng-Hsien Lin ,  Yao-Wen Bai ,  Rui Zhang ,  Wen-Chin Lee

Inventor： Cheng-Hsien Lin ,  Yao-Wen Bai ,  Rui Zhang ,  Wen-Chin Lee

IPC: D01F9/12 ,  H01B1/04 ,  H05K3/00

CPC classification number: H05K3/424 ,  B82Y10/00 ,  C23C18/1204 ,  C23C18/127 ,  C23C18/1287 ,  H05K3/427 ,  H05K2201/026 ,  H05K2201/0323

Abstract: A pre-plating solution for making a printed circuit board includes carbon nanotubes of 0.01-3 wt %, a surfactant of 0.01-4 wt %, an alkaline substance of 0.01-1 wt % and a solvent. A method for preparing a pre-plating solution comprising the steps of: providing a plurality of carbon nanotubes; purifying the carbon nanotubes; treating the purified carbon nanotubes with an acid; mixing the treated carbon nanotubes, an alkaline substance and a solvent to form suspension; and adding surfactant into suspension.

Abstract translation: 用于制造印刷电路板的预镀溶液包括0.01-3重量％的碳纳米管，0.01-4重量％的表面活性剂，0.01-1重量％的碱性物质和溶剂。 一种制备预镀液的方法，包括以下步骤：提供多个碳纳米管; 纯化碳纳米管; 用酸处理纯化的碳纳米管; 混合处理的碳纳米管，碱性物质和溶剂以形成悬浮液; 并将表面活性剂加入悬浮液中。

公开(公告)号：US20130075247A1

公开(公告)日：2013-03-28

申请号：US13239989

申请日：2011-09-22

Applicant: Wen-Chin Lee ,  Wen-Tsai Yen ,  Yung-Sheng Chiu ,  Ying Chen Chao

Inventor： Wen-Chin Lee ,  Wen-Tsai Yen ,  Yung-Sheng Chiu ,  Ying Chen Chao

IPC: C23C14/34

CPC classification number: C23C14/06 ,  C23C14/0047 ,  C23C14/0057 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell.

Abstract translation: 用于形成硫族化物或黄铜矿基半导体材料的方法和系统提供了来自Se自由基产生系统的来自目标的金属前体材料和Se径向的同时沉积。 Se自由基生成系统包括产生Se蒸气的蒸发器和使用等离子体产生Se自由基流量的等离子体室。 可以依次进行多个这样的沉积操作，每个沉积操作具有精确控制的沉积温度。 沉积材料可以包括组成浓度梯度或者可以是复合材料，并且可以用作太阳能电池中的吸收层。

公开(公告)号：US08304841B2

公开(公告)日：2012-11-06

申请号：US12761918

申请日：2010-04-16

Applicant: Jeff J. Xu ,  Cheng-Tung Lin ,  Hsiang-Yi Wang ,  Wen-Chin Lee ,  Betty Hsieh

Inventor： Jeff J. Xu ,  Cheng-Tung Lin ,  Hsiang-Yi Wang ,  Wen-Chin Lee ,  Betty Hsieh

IPC: H01L21/02

CPC classification number: H01L27/092 ,  H01L21/823835 ,  H01L21/823842

Abstract: A gate-last method for forming a metal gate transistor is provided. The method includes forming an opening within a dielectric material over a substrate. A gate dielectric structure is formed within the opening and over the substrate. A work function metallic layer is formed within the opening and over the gate dielectric structure. A silicide structure is formed over the work function metallic layer.

Abstract translation: 提供了用于形成金属栅极晶体管的最后一种方法。 该方法包括在基底上形成电介质材料内的开口。 栅极电介质结构形成在开口内和衬底上。 工作功能金属层形成在开口内和栅介质结构之上。 在功函数金属层上形成硅化物结构。

公开(公告)号：US08211267B2

公开(公告)日：2012-07-03

申请号：US12156818

申请日：2008-06-05

Applicant: Cheng-Hsien Lin ,  Yao-Wen Bai ,  Wen-Chin Lee ,  Rui Zhang ,  Kai-Li Jiang ,  Chen Feng

Inventor： Cheng-Hsien Lin ,  Yao-Wen Bai ,  Wen-Chin Lee ,  Rui Zhang ,  Kai-Li Jiang ,  Chen Feng

IPC: B32B5/08 ,  B32B5/12 ,  B32B5/18

CPC classification number: H05K9/009 ,  B29C70/882 ,  B29C70/885 ,  B29K2105/167 ,  C08L2666/76 ,  H05K9/0083 ,  H05K9/0088 ,  Y10S977/784 ,  Y10S977/789 ,  Y10T428/24132 ,  Y10T428/249979

Abstract: An electromagnetic shielding composite includes a polymer and a plurality of carbon nanotubes disposed in the polymer in a form of carbon nanotube film structure. A method for making an electromagnetic shielding composite includes the steps of: (a) providing an array of carbon nanotubes; (b) drawing a carbon nanotube film from the array of carbon nanotubes; (c) providing a substrate, covering at least one carbon nanotube film on the substrate to form a carbon nanotube film structure; and (d) providing a polymer and combining the carbon nanotube film structure with the polymer to form an electromagnetic shielding composite.

Abstract translation: 电磁屏蔽复合材料包括以碳纳米管膜结构形式设置在聚合物中的聚合物和多个碳纳米管。 制造电磁屏蔽复合材料的方法包括以下步骤：（a）提供碳纳米管阵列; （b）从碳纳米管阵列中抽出碳纳米管膜; （c）提供衬底，在衬底上覆盖至少一个碳纳米管膜以形成碳纳米管膜结构; 和（d）提供聚合物并将碳纳米管膜结构与聚合物结合以形成电磁屏蔽复合材料。

公开(公告)号：US08089003B2

公开(公告)日：2012-01-03

申请号：US12057654

申请日：2008-03-28

Applicant: Wen-Chin Lee ,  Cheng-Hsien Lin

Inventor： Wen-Chin Lee ,  Cheng-Hsien Lin

IPC: H05K1/02

CPC classification number: H05K1/056 ,  H05K1/0393 ,  H05K2201/0355 ,  H05K2201/0382

Abstract: A printed circuit board substrate includes an insulation matrix and a waterproof layer. The insulation matrix includes a first surface and a second surface at an opposite side thereof to the first surface. The waterproof layer is formed in the insulation matrix and is arranged between the first surface and the second surface for blocking water from passing therethrough in a thicknesswise direction of the insulation matrix.

Abstract translation: 印刷电路板基板包括绝缘基体和防水层。 绝缘矩阵包括与第一表面相对的第一表面和第二表面。 防水层形成在绝缘基体中，并且布置在第一表面和第二表面之间，用于阻挡水在绝缘基体的厚度方向上穿过其中。