公开(公告)号：US20100066619A1

公开(公告)日：2010-03-18

申请号：US12516648

申请日：2007-11-26

申请人： Yuji Furumura ,  Naomi Mura ,  Shinji Nishihara ,  Katsuhiro Fujino ,  Katsuhiko Mishima ,  Susumu Kamihashi

发明人： Yuji Furumura ,  Naomi Mura ,  Shinji Nishihara ,  Katsuhiro Fujino ,  Katsuhiko Mishima ,  Susumu Kamihashi

IPC分类号： H01Q11/12

CPC分类号： B42D25/369 ,  B42D25/00 ,  B42D25/29 ,  B42D2033/16 ,  B42D2033/20 ,  B42D2033/46 ,  G06K7/0008 ,  G06K19/07749 ,  G06K19/07775 ,  G06K19/07779 ,  G07D7/04 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01Q1/2283 ,  H01Q1/38 ,  H01Q7/00 ,  H04B5/0025 ,  H04B5/0031 ,  H04B5/0037 ,  H04B5/02 ,  H01L2924/00014

摘要： A magnetic coupling device that supplies a high-frequency electromagnetic field appropriate for sensing and reading of information to a fine magnetic coupling circuit component contained in/added to individual banknotes, securities, or any other valuable sheet-like or plate-like objects, ensures sufficient magnetic coupling, and supplies sufficient electric power; and a reading device having equivalent functions are provided.A scanning probe (a magnetic coupling device) 100 is a magnetic coupling device having a loop antenna for generation of a high-frequency electromagnetic field that resonates with and senses a tank circuit built into a fine magnetic coupling circuit component, and the loop antenna has a dielectric substrate 101, a first loop antenna 102A formed on the foreside of the dielectric substrate, a second loop antenna 102B formed on the backside of the dielectric substrate so as to be located in the same position and have the same diameter as the first loop antenna, and junctions (through holes) 108 and 110 connecting the first loop antenna and the second loop antenna in series.

摘要翻译： 将适用于感测和读取信息的高频电磁场提供给包含在/添加到单个纸币，证券或任何其它有价值的片状或板状物体中的精细磁耦合电路部件的磁耦合装置确保 足够的磁耦合，并提供足够的电力; 并提供具有等效功能的读取装置。 扫描探针（磁耦合装置）100是具有用于产生高频电磁场的环形天线的磁耦合装置，其与内置于精细磁耦合电路部件中的谐振电路谐振并感测到谐振电路，并且环形天线具有 电介质基板101，形成在电介质基板的前面的第一环形天线102A，形成在电介质基板的背面上的第二环形天线102B，以便位于相同的位置并且具有与第一回路相同的直径 天线和连接第一环形天线和第二环形天线的结（通孔）108和110。

公开(公告)号：US20090102025A1

公开(公告)日：2009-04-23

申请号：US11664091

申请日：2006-04-07

申请人： Toshio Hayashi ,  Yasuhiro Morikawa ,  Michio Ishikawa ,  Yuji Furumura ,  Naomi Mura

发明人： Toshio Hayashi ,  Yasuhiro Morikawa ,  Michio Ishikawa ,  Yuji Furumura ,  Naomi Mura

IPC分类号： H01L21/461 ,  H01L29/10

CPC分类号： H01L29/7833 ,  H01L21/28061 ,  H01L21/31116 ,  H01L21/76802 ,  H01L29/6659

摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.

摘要翻译： 一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的 具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。 这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。 所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。

公开(公告)号：US5763005A

公开(公告)日：1998-06-09

申请号：US589470

申请日：1996-01-22

申请人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

发明人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

IPC分类号： H01L21/316 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  C23C16/00 ,  H01L21/223

CPC分类号： H01L23/291 ,  H01L21/3105 ,  H01L23/5329 ,  H01L2924/0002

摘要： For a multilayer insulating film of a semiconductor device, the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1.times.10.sup.20 atoms/cm.sup.3 or more.

摘要翻译： 对于半导体器件的多层绝缘膜，在绝缘膜的界面上碳或氟的分布量最大化。 界面处存在的碳的浓度为1×1020原子/ cm3以上。

公开(公告)号：US5518937A

公开(公告)日：1996-05-21

申请号：US407254

申请日：1995-03-20

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  H01L29/7375

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

摘要翻译： 双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上 大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。 第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。

公开(公告)号：US5506443A

公开(公告)日：1996-04-09

申请号：US327820

申请日：1994-10-17

申请人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

发明人： Yuji Furumura ,  Masahiko Doki ,  Hidetoshi Nishio

IPC分类号： H01L21/316 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/291 ,  H01L21/3105 ,  H01L23/5329 ,  H01L2924/0002

摘要： A multilayer insulating film of a semiconductor device, where the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1.times.10.sup.20 atoms/cm.sup.3 or more.

摘要翻译： 半导体器件的多层绝缘膜，其中碳或氟的分布量在绝缘膜之间的界面处最大化。 界面处存在的碳的浓度为1×1020原子/ cm3以上。

公开(公告)号：US4509070A

公开(公告)日：1985-04-02

申请号：US218007

申请日：1980-12-18

申请人： Yuji Furumura

发明人： Yuji Furumura

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/08

CPC分类号： H01L27/088

摘要： A metal-insulator-semiconductor (MIS) device comprising a MIS transistor and a MIS input element which are fabricated apart from each other on a semiconductor substrate. The MIS transistor is provided with source and drain regions as well as a channel region between the source and drain regions, a gate insulating layer on the channel region and a gate on the insulating layer. The MIS input element is provided with an input region of the same conductive type as the channel region, an insulating layer on the input region and an electrode on the insulating layer. The electrode and insulating layer of the input element are made of the same material in the same thickness as the gate and insulating layer of the MIS transistor, and the gate of the MIS transistor is exclusively electrically interconnected to the electrode of the MIS input element.

摘要翻译： 一种金属绝缘体半导体（MIS）器件，包括在半导体衬底上彼此分开制造的MIS晶体管和MIS输入元件。 MIS晶体管设置有源极和漏极区以及源极和漏极区之间的沟道区，沟道区上的栅极绝缘层和绝缘层上的栅极。 MIS输入元件设置有与沟道区相同的导电类型的输入区域，输入区域上的绝缘层和绝缘层上的电极。 输入元件的电极和绝缘层由与MIS晶体管的栅极和绝缘层相同厚度的相同材料制成，并且MIS晶体管的栅极专门与MIS输入元件的电极电互连。