公开(公告)号：US10032628B2

公开(公告)日：2018-07-24

申请号：US15144481

申请日：2016-05-02

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L21/265 ,  H01L29/36 ,  H01L29/417

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02694 ,  H01L21/2254 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/41725

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US20250051925A1

公开(公告)日：2025-02-13

申请号：US18795263

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: C23C16/56 ,  C23C16/455 ,  C23C16/52 ,  H01L21/3205

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US12211742B2

公开(公告)日：2025-01-28

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02 ,  H01L21/768

Abstract: Methods for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen. The gap filling fluid can be formed by introducing a precursor into the reaction chamber and introducing a co-reactant into the reaction chamber to form a gap filling fluid that at least partially fills the gap.

公开(公告)号：US20240363358A1

公开(公告)日：2024-10-31

申请号：US18647931

申请日：2024-04-26

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Charles Dezelah ,  René Henricus Jozef Vervuurt

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01L21/02321 ,  H01L21/02337

Abstract: Methods for chemically etching a target layer are disclosed. In particular, methods for etching a target layer by cyclical chemical vapor etching processes and atomic layer etching processes are disclosed. Exemplary apparatus for performing chemical etching processes are further disclosed.

公开(公告)号：US20240222190A1

公开(公告)日：2024-07-04

申请号：US18398796

申请日：2023-12-28

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Jihee Jeon

IPC: H01L21/768 ,  C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  C23C16/402 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/3321

Abstract: Methods and apparatus for forming a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap-filling material. The gap-filling material includes silicon.

公开(公告)号：US20240209499A1

公开(公告)日：2024-06-27

申请号：US18534817

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Miguel Sérgio De Abreu Neto ,  Jihee Jeon ,  Imane Abdellaoui ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/342 ,  C23C16/45538 ,  C23C16/56

Abstract: Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a PECVD process.

公开(公告)号：US20230386934A1

公开(公告)日：2023-11-30

申请号：US18322286

申请日：2023-05-23

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  Marko Tuominen ,  Vincent Vandalon ,  Eva E. Tois ,  Viraj Madhiwala ,  YongGyu Han ,  Daniele Chiappe ,  Michael Givens ,  Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: H01L21/8238

CPC classification number: H01L21/823807

Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.

公开(公告)号：US20230095086A1

公开(公告)日：2023-03-30

申请号：US17953803

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Charles Dezelah ,  Qi Xie ,  Viljami Pore

IPC: H01L21/285

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20230070199A1

公开(公告)日：2023-03-09

申请号：US17902957

申请日：2022-09-05

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: C23C16/455 ,  C23C16/36 ,  C23C16/56 ,  C23C16/04

Abstract: A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.

公开(公告)号：US20220293463A1

公开(公告)日：2022-09-15

申请号：US17680607

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.