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公开(公告)号：US07041931B2
公开(公告)日：2006-05-09
申请号：US10280660
申请日：2002-10-24
申请人： Dean Jennings , Joseph M. Ranish , Brian Haas , Ajit Balakrishna , Sundar Ramamurthy , Aaron Hunter , Mark Yam
发明人： Dean Jennings , Joseph M. Ranish , Brian Haas , Ajit Balakrishna , Sundar Ramamurthy , Aaron Hunter , Mark Yam
IPC分类号： F27B5/14
CPC分类号： H01L21/67248 , F27B5/16 , F27B17/0025 , F27D19/00 , F27D21/0014 , H01L21/67115
摘要： In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.
摘要翻译： 在半导体衬底的热处理系统中，反射板在衬底的加热和冷却期间具有面向衬底的台阶表面。 反射板的凸起表面具有降低的反射率，在基板的冷却等方面提供了优点。 反射板还包括多个凹槽，一个或多个高温计与之连接。 这些凹槽具有高度反射的表面，在高温计的性能方面具有优势。
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公开(公告)号：US09870919B2
公开(公告)日：2018-01-16
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.
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43.发明授权公开(公告)号：US09245786B2
公开(公告)日：2016-01-26
申请号：US13152154
申请日：2011-06-02
IPC分类号： C23C16/458 , C23C16/52 , H01L21/68 , H01L21/67
CPC分类号： H01L21/68 , H01L21/67115 , H01L21/67259
摘要： Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.
摘要翻译： 本发明的实施例提供了使用电容式传感器将衬底定位在处理室中的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括设置在内部容积中的第一和第二电容传感器。 第一电容传感器被定位成在第一角度位置处检测衬底的边缘的位置。 第二电容传感器被定位成检测基板的垂直位置。
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公开(公告)号：US09175908B2
公开(公告)日：2015-11-03
申请号：US13445543
申请日：2012-04-12
申请人： Joseph M. Ranish
发明人： Joseph M. Ranish
CPC分类号： F27B17/0025 , H01L21/67115 , Y02P10/122
摘要： A method and apparatus for thermal processing of semiconductor substrates is disclosed. Each lamp of a lamp assembly is immersed in a thermally conductive atmosphere comprising oxygen. As the lamps are operated, the oxygen reacts with carbon containing species. Consumed oxygen is replaced over time until the thermal conductivity of the atmosphere falls below a tolerance threshold. The atmosphere is then evacuated and replaced.
摘要翻译： 公开了半导体衬底的热处理方法和装置。 将灯组件的每个灯浸入包含氧气的导热气氛中。 当灯被操作时，氧与含碳物质反应。 消耗的氧气随时间被更换，直到大气的热导率降到公差阈值以下。 然后将空气抽真空并更换。
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公开(公告)号：US20130284097A1
公开(公告)日：2013-10-31
申请号：US13785454
申请日：2013-03-05
IPC分类号： B05B3/00
CPC分类号： B05B3/00 , C23C16/45578 , C23C16/45589 , C23C16/481 , C23C16/52 , H01L21/67115
摘要： Embodiments of the invention generally relate to apparatus for and methods of depositing material on a substrate. The apparatus generally include a process chamber having a process gas region therein. Process gas is introduced into the process gas region through a process gas inlet. The chamber also includes lamps positioned outside the chamber to thermally decompose the process gas onto the substrate surface. The process chamber also includes at least one movable gas diffuser adapted to provide process gas to the surface of the substrate to effect a uniform deposition of material on the substrate surface. The methods generally include flowing a process gas parallel to a surface of a substrate, and thermally decomposing the process gas on the substrate. Additional process gas is provided through a movable gas diffuser to the surface of the substrate in a predetermined distribution to effect a uniform deposition on the substrate surface.
摘要翻译： 本发明的实施例一般涉及用于在衬底上沉积材料的装置和方法。 该装置通常包括其中具有工艺气体区域的处理室。 工艺气体通过工艺气体入口引入工艺气体区域。 该室还包括位于室外的灯，以将工艺气体热分解到衬底表面上。 处理室还包括至少一个可移动的气体扩散器，其适用于向衬底的表面提供工艺气体，以使材料均匀地沉积在衬底表面上。 所述方法通常包括使工艺气体平行于衬底的表面流动，并且热分解衬底上的工艺气体。 通过可移动气体扩散器以预定的分布将额外的工艺气体提供到衬底的表面，以在衬底表面上实现均匀的沉积。
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公开(公告)号：US08283607B2
公开(公告)日：2012-10-09
申请号：US12100179
申请日：2008-04-09
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US07933009B2
公开(公告)日：2011-04-26
申请号：US11829748
申请日：2007-07-27
CPC分类号： H01L21/681 , H01L21/67259
摘要： Embodiments of methods and apparatus for detecting the proper position of a substrate in a chamber are provided herein. In some embodiments, a substrate position detection apparatus includes a substrate support having a plurality of lift pins for supporting a substrate in an elevated position thereover; a light source for directing a beam of light upon a reflective upper surface of the substrate; and a light sensor for detecting a reflected beam of light from the upper surface of the substrate upon the substrate being aligned in a predetermined elevated position.
摘要翻译： 本文提供了用于检测腔室中基底的适当位置的方法和装置的实施例。 在一些实施例中，基板位置检测装置包括具有多个提升销的基板支撑件，用于将基板支撑在其上的升高位置; 用于将光束引导到所述基板的反射上表面上的光源; 以及光传感器，用于在基板在预定的升高位置对准时检测来自基板的上表面的反射光束。
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公开(公告)号：US20090298300A1
公开(公告)日：2009-12-03
申请号：US12437257
申请日：2009-05-07
IPC分类号： H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.
摘要翻译： 描述了用于衬底高压快速热处理的方法和装置。 描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至 绝对压力大于1.5个大气压，并将辐射能量引向基板。 描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。 处理室可以包括压力控制阀，以控制室内的压力。
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公开(公告)号：US20090212037A1
公开(公告)日：2009-08-27
申请号：US12036078
申请日：2008-02-22
IPC分类号： F27D11/00
CPC分类号： H01L21/324 , H01L21/67017 , H01L21/67098 , H01L21/67115
摘要： A silver reflector for reflecting radiation from a lamp in a semiconductor processing chamber is disclosed. The reflector may be a sleeve to be disposed in a lightpipe or part of a lamphead. The silver may be in the form of a coating on the sleeve or the lamphead.
摘要翻译： 公开了一种用于在半导体处理室中反射来自灯的辐射的银反射器。 反射器可以是套筒以设置在光管或灯头的一部分中。 银可以是套筒或灯头上的涂层形式。
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公开(公告)号：US20090120924A1
公开(公告)日：2009-05-14
申请号：US12203696
申请日：2008-09-03
申请人： STEPHEN MOFFATT , Joseph M. Ranish
发明人： STEPHEN MOFFATT , Joseph M. Ranish
IPC分类号： F27D11/00
CPC分类号： H01L21/324 , B23K26/0626 , B23K26/352 , B23K2101/40 , H01L21/02667 , H01L21/26506 , H01L21/2658 , H01L21/268 , H01L21/2686 , H01L21/67115 , H01L29/66575
摘要： The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.
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