公开(公告)号：US08772055B1

公开(公告)日：2014-07-08

申请号：US13796169

申请日：2013-03-12

申请人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

发明人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC分类号： H01L21/00 ,  B05C11/00 ,  H05B6/66

CPC分类号： C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

摘要翻译： 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US09870919B2

公开(公告)日：2018-01-16

申请号：US13864849

申请日：2013-04-17

申请人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

发明人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/0262 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

公开(公告)号：US20090294101A1

公开(公告)日：2009-12-03

申请号：US12132101

申请日：2008-06-03

申请人： RICHARD FOVELL ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

发明人： RICHARD FOVELL ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

IPC分类号： F28D15/00

CPC分类号： F28D15/00 ,  F28D2021/0077 ,  H01L21/67109 ,  H01L21/67248

摘要： Methods and apparatus for controlling the temperature of a substrate support are provided herein. In some embodiments, an apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

摘要翻译： 本文提供了用于控制基板支撑件的温度的方法和装置。 在一些实施例中，用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。 第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。 第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。 第一和第二温度可以相同或不同。 可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。 一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

公开(公告)号：US20070081295A1

公开(公告)日：2007-04-12

申请号：US11409292

申请日：2006-04-21

申请人： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

摘要翻译： 用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路， 制冷剂入口和制冷剂出口。 优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。 优选地，蒸发器内的制冷剂在气相和液相之间分配。 结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。 该特征改善了静电卡盘的直径上的温度分布的均匀性。

公开(公告)号：US20070081294A1

公开(公告)日：2007-04-12

申请号：US11408333

申请日：2006-04-21

申请人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

发明人： Douglas Buchberger ,  Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

IPC分类号： H01T23/00

CPC分类号： H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

摘要翻译： 用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到 所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

公开(公告)号：US08596336B2

公开(公告)日：2013-12-03

申请号：US12132101

申请日：2008-06-03

申请人： Richard Fovell ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

发明人： Richard Fovell ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

IPC分类号： F22B37/00 ,  G05D9/00 ,  B05C11/00

CPC分类号： F28D15/00 ,  F28D2021/0077 ,  H01L21/67109 ,  H01L21/67248

摘要： Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

摘要翻译： 用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。 第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。 第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。 第一和第二温度可以相同或不同。 可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。 一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

公开(公告)号：US20070254486A1

公开(公告)日：2007-11-01

申请号：US11414027

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

IPC分类号： H01L21/461 ,  C03C25/68

CPC分类号： H01L21/76802 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/3347 ,  H01L21/31116

摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体， 第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。

公开(公告)号：US20070251642A1

公开(公告)日：2007-11-01

申请号：US11414026

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

摘要翻译： 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

公开(公告)号：US08876024B2

公开(公告)日：2014-11-04

申请号：US11972072

申请日：2008-01-10

申请人： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

发明人： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

IPC分类号： B05B1/14 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

CPC分类号： H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

摘要翻译： 本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

公开(公告)号：US07649729B2

公开(公告)日：2010-01-19

申请号：US11871807

申请日：2007-10-12

申请人： Douglas A. Buchberger, Jr. ,  Paul Brillhart

发明人： Douglas A. Buchberger, Jr. ,  Paul Brillhart

IPC分类号： H02N13/00

CPC分类号： H01L21/6831 ,  H01L21/67109

摘要： The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.

摘要翻译： 本发明通常包括静电卡盘基座，静电卡盘组件和用于静电卡盘组件的圆盘。 精确蚀刻等离子体室内的衬底可能是一个挑战，因为室内的等离子体可能导致衬底上的温度不均匀。 衬底上可能存在温度梯度，使得衬底的边缘与衬底的中心相比处于不同的温度。 当衬底的温度不均匀时，可能不能将特征均匀地蚀刻到设置在衬底上方的结构的各个层中。 双区域静电吸盘组件可以补偿穿过衬底表面的温度梯度。