摘要:
The evaporation boat comprises superposed upper and lower sheets. The upper sheet includes a upwardly convexed central section and a pair of side sections bent back toward the central section and the lower sheet includes a downwardly convexed central section and a pair of side sections bent inwardly toward the upper sheet. The upper and lower sheets are superposed each other such that the central sections of the upper and lower sheets define a substantially closed chamber for accomodating source material to be evaporated, that slit shaped vapor passages are formed between the upper and lower sheets or the opposite sides of the chamber and that any straight line drawn between any point on the surface of the source material and any point in the passages intersects the inner wall of the upper or lower sheets.
摘要:
Provided is a process for readily producing fine particles of a solid solution having a small particle size, comprising a solid solution of zirconia, ceria and a rare earth oxide in a desired composition, and being highly crystalline.The process for producing the fine particles of the solid solution comprises the following steps in the order named: obtaining a melt comprising, in terms of mol % on an oxide basis, from 5 to 50% ZrO2, CeO2 and RE2O3 (where RE is at least one member selected from rare earth elements other than Ce) in total, from 10 to 50% RO (where R is at least one member selected from the group consisting of Mg, Ca, Sr, Ba and Zn), and from 30 to 75% B2O3; quenching the melt to obtain an amorphous material; heating the amorphous material to obtain precipitates containing crystals of a solid solution with ZrO2, CeO2 and RE2O3; and separating the crystals of the solid solution from the precipitates to obtain fine particles of the solid solution.
摘要翻译:本发明提供容易制造具有小粒径的固溶体的细颗粒的方法,其包含氧化锆,二氧化铈和稀土氧化物的固溶体,并具有高结晶性。 制造固溶体微粒的方法包括以下顺序的步骤:获得包含以氧化物为基准的摩尔%为5至50%的ZrO 2,CeO 2和RE 2 O 3(其中RE为 至少一种选自Ce以外的稀土元素的组分),10至50%的RO(其中R是选自Mg,Ca,Sr,Ba和Zn中的至少一种),并且从30至 75%B2O3; 淬火熔体以获得无定形材料; 加热无定形材料,得到含有ZrO 2,CeO 2和RE 2 O 3的固溶体晶体的析出物; 并将固溶体的晶体与析出物分离,得到固溶微细颗粒。
摘要:
To provide a process for producing ceria-zirconia solid solution crystal fine particles having high crystallinity, being excellent in uniformity of composition and particle size, having a small particle size and a high specific surface area and being excellent in heat resistance, and such solid solution crystal fine particles.A process comprises a step of obtaining a melt containing, as represented by mol % based on oxides, from 5 to 50% of (ZrO2+CeO2), from 10 to 60% of RO (wherein R is at least one member selected from the group consisting of Mg, Ca, Sr and Ba) and from 25 to 70% of B2O3, a step of quenching the melt to obtain an amorphous material, a step of heating the amorphous material at a temperature of from 550 to 1000° C. to precipitate a ceria-zirconia solid solution crystal in the amorphous material, and a step of separating components other than the ceria-zirconia solid solution crystal from the obtained precipitates to obtain the ceria-zirconia solid solution crystal fine particles, in this order.
摘要翻译:为了提供具有高结晶度的二氧化铈 - 氧化锆固溶体结晶微粒的制造方法,组成和粒度均匀性优异,粒径小,比表面积小,耐热性优异的固溶体 晶体细颗粒。 一种方法包括以下步骤:获得含有以氧化物为基准的摩尔%为5〜50%的(ZrO 2 + CeO 2),10〜60%的RO(其中,R为至少1种选自 由Mg,Ca,Sr和Ba组成的组)和25〜70%的B 2 O 3,使熔融物淬火以获得无定形材料的步骤,在550〜1000℃的温度下加热无定形材料的工序。 在无定型材料中析出二氧化铈 - 氧化锆固溶体晶体,以及从得到的析出物中分离除二氧化铈 - 氧化锆固溶体结晶以外的成分的工序,得到氧化铈 - 氧化锆固溶体结晶微粒。
摘要:
To provide a slurry for polishing which is excellent in polishing properties, can suppress scratches and is appropriate for accurate polishing in semiconductor production steps, and fine particles of oxide crystal for it.Fine particles of oxide crystal, characterized in that the ratio of the crystallite size measured by X-ray diffraction method and calculated by Scherrer method to the average primary particle size equivalent to sphere from the specific surface area measured by BET is the crystallite size: the average primary particle size=1:0.8 to 1:2.5. A slurry for polishing, characterized in that the fine particles of oxide crystal are dispersed in a liquid medium, and from 0.1 to 40 mass % of the fine particles of oxide crystal are contained, per the total mass of the slurry for polishing.
摘要:
An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide and titanium oxide and has a film thickness of from 100 to 1,500 nm.
摘要:
A process for producing a glass plate with conductive printed wiring which does not require a new screen for each model and which can easily be adjusted for desired electric heating performance or antenna performance, and a conductive toner for such a process. A conductive toner comprising at least one member selected from the group consisting of a thermoplastic resin (A) having carboxyl groups introduced and having T100 of from 300 to 450° C., a polypropylene (B) having carboxyl groups introduced, and a thermoplastic resin (C) having T100 of from 300 to 450° C., conductive fine particles, and glass frit-containing particles. T100 is a temperature at the time when a weight change of the resin has become no longer observed during a temperature rise from room temperature at a rate of 10° C./min by means of a thermogravimetric analyzer (TG).
摘要翻译:一种用于制造具有导电印刷布线的玻璃板的方法,其不需要用于每个型号的新屏幕,并且可以容易地调节所需的电加热性能或天线性能,以及用于这种处理的导电调色剂。 一种导电调色剂,其包含选自由引入羧基的热塑性树脂(A)和300-450℃的T 100的至少一种,聚丙烯(B)具有 导入的羧基和300〜450℃的T 100的热塑性树脂(C),导电性微粒和含玻璃料的粒子。 T 100是在室温下以10℃/分钟的速度升温后,通过热重分析仪在树脂的重量变化不再发生变化时的温度 (TG)。
摘要:
It is an object to provide a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. The above object is achieved by use of a liquid composition for forming a ferroelectric thin film, characterized in that in a liquid medium, ferroelectric oxide particles being plate or needle crystals, which are represented by the formula ABO3 (wherein A is at least one member selected from the group consisting of Ba2+, Sr2+, Ca2+, Pb2+, La2+, K+ and Na+, and B is at least one member selected from the group consisting of Ti4+, Zr4+, Nb5+, Ta5+ and Fe3+) and have a Perovskite structure and which have an average primary particle size of at most 100 nm and an aspect ratio of at least 2, are dispersed, and a soluble metal compound which forms a ferroelectric oxide by heating, is dissolved.
摘要:
To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovskite type dielectric crystal, glass frit, and a hydrolysable silicon compound or its oligomer, and a MIM capacitor comprising a substrate, and a bottom electrode layer, a dielectric layer having a structure such that fine particles of perovskite type dielectric crystal are dispersed in a silicon oxide matrix containing glass-forming ions and a top electrode, formed on the substrate in this order.
摘要:
A positive electrode active material for a nonaqueous electrolyte secondary battery includes at least a lithium-containing manganese layered composite oxide represented by the formula Li1-xAxMnO2, or the formula Li1-xAxMn1-yMyO2. The lithium-containing manganese composite oxide includes a lithium substitute metal A, such as Na, K, Ag, substituting for part of Li. The lithium substitution quantity x may be in the range of 0.03
摘要:
A polishing compound and a polishing method are provided, whereby in a CMP process in a process for production of a semiconductor device, a metal layer and/or a barrier layer, etc., can be polished while suppressing excessive oxidation of the metal layer, and the polishing rate can be adjusted depending upon the application. A polishing compound comprising polishing abrasive grains and a peptide, a polishing compound slurry having such a polishing compound suspended in an aqueous medium, preferably together with an oxidizing agent and preferably at a pH of at least 7, and a method for polishing a metal layer of e.g. Cu and/or a barrier layer, formed on a semiconductor substrate, by polishing with an abrasive cloth of a CMP apparatus having such a polishing compound slurry supported thereon, are disclosed.