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    METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE
    41.
    发明申请
    METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE 有权
    用于对准硅基板上的一组图案的方法和装置

    公开(公告)号：US20100136718A1

    公开(公告)日：2010-06-03

    申请号：US12468540

    申请日：2009-05-19

    Applicant: Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

    Inventor： Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

    IPC: H01L21/66 ,  B05C19/00

    CPC classification number: H01L31/1804 ,  H01L22/12 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.

    Abstract translation: 公开了一种在衬底上对准一组图案的方法，该衬底包括衬底表面。 该方法包括在衬底表面上沉积一组硅纳米颗粒，所述纳米颗粒组包括一组包含一组碳原子的配体分子，其中形成第一组区域，其中沉积硅纳米颗粒，其余部分 衬底表面限定第二组区域。 所述方法还包括将所述一组硅纳米颗粒致密化成薄膜，其中在基底表面上形成一组硅 - 有机区，其中所述第一组区具有第一反射率值，并且所述第二组区具有第二反射率 值。 该方法还包括用照明源照射衬底表面，其中第二反射率值与第一反射率值的比值大于约1.1。

    METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING
    42.
    发明申请
    METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
    使用激光加工形成IV族半导体结的方法

    公开(公告)号：US20080305619A1

    公开(公告)日：2008-12-11

    申请号：US12114141

    申请日：2008-05-02

    Applicant: Francesco Lemmi ,  Andreas Meisel ,  Homer Antoniadis

    Inventor： Francesco Lemmi ,  Andreas Meisel ,  Homer Antoniadis

    IPC: H01L21/20 ,  H01L21/02

    CPC classification number: H01L31/182 ,  H01L21/0237 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02675 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/077 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.

    Abstract translation: 公开了一种在衬底上形成IV族半导体结的方法。 该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。 该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有 第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。 该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。 该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有 第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

    METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES
    43.
    发明申请
    METHODS FOR OPTIMIZING THIN FILM FORMATION WITH REACTIVE GASES 失效
    用反应性气体优化薄膜形成的方法

    公开(公告)号：US20080254601A1

    公开(公告)日：2008-10-16

    申请号：US12060528

    申请日：2008-04-01

    Applicant: Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

    Inventor： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

    IPC: H01L21/208

    CPC classification number: H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

    Abstract: A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

    Abstract translation: 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

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