公开(公告)号：US08309421B2

公开(公告)日：2012-11-13

申请号：US13011687

申请日：2011-01-21

申请人： Yao-Hung Yang ,  Abhijit Kangude ,  Sanjeev Baluja ,  Michael Martinelli ,  Liliya Krivulina ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Scott Hendrickson

发明人： Yao-Hung Yang ,  Abhijit Kangude ,  Sanjeev Baluja ,  Michael Martinelli ,  Liliya Krivulina ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Scott Hendrickson

IPC分类号： H01L21/336 ,  H01L21/76

CPC分类号： H05B41/3921 ,  H01L21/67115 ,  H05B41/3922

摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.

摘要翻译： 本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。 方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的衬底上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。 然后通过使用校正或补偿因子的闭环控制来调节灯，以将灯单独调节到期望的输出。 在将灯调节到期望的输出之前，灯可以可选地被调整为相等的辐照度。 闭环控制确保从基板到基板的工艺均匀性。 辐照度测量和校正或补偿因素允许由于室部件劣化，腔室部件更换或腔室清洁而调节灯具设定点。

公开(公告)号：US20120276301A1

公开(公告)日：2012-11-01

申请号：US13545738

申请日：2012-07-10

申请人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee (Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

发明人： Yong-Won Lee ,  Sang M. Lee ,  Meiyee (Maggie Le) Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Derek R. Witty ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Jigang Li

IPC分类号： B05D5/12 ,  B05D3/06

CPC分类号： H01L21/76832 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

摘要翻译： 本文所述的实施例提供了一种处理衬底的方法。 该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。 在一个实施例中，提供了一种用于处理衬底的方法。 该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

公开(公告)号：US20120270339A1

公开(公告)日：2012-10-25

申请号：US13093351

申请日：2011-04-25

申请人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

发明人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US07723228B2

公开(公告)日：2010-05-25

申请号：US10442359

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20070298362A1

公开(公告)日：2007-12-27

申请号：US11562043

申请日：2006-11-21

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Andrzej Kaszuba ,  Ndanka O. Mukuti

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Sanjeev Baluja ,  Andrzej Kaszuba ,  Ndanka O. Mukuti

IPC分类号： F27D3/00 ,  F27D11/00

CPC分类号： F27B17/0025 ,  H01L21/67115

摘要： A pump liner is used to direct a laminar flow of purge gas across a workpiece to remove contaminants or species outgassed or otherwise produced by the workpiece during processing. The pump liner can take the form of a ring having a plurality of injection ports, such as slits of a variety of shapes and/or sizes, opposite a plurality of receiving ports in order to provide the laminar flow. The flow of purge gas is sufficient to carry a contaminant or outgassed species from the processing chamber in order to prevent the collection of the contaminants on components of the chamber. The pump liner can be heated, via conduction and irradiation from a radiation source, for example, in order to prevent the condensation of species on the liner. The pump liner also can be anodized or otherwise processed in order to increase the emissivity of the liner.

摘要翻译： 泵衬套用于引导吹扫气体的层流穿过工件以去除在加工过程中由工件脱气或以其它方式产生的污染物或物质。 泵衬套可以采取具有多个注入口的环的形式，例如与多个接收端口相对的各种形状和/或尺寸的狭缝，以提供层流。 吹扫气体的流动足以承载来自处理室的污染物或去气物质，以便防止在室的部件上收集污染物。 可以通过例如辐射源的传导和辐射来加热泵衬垫，以防止物质在衬套上的冷凝。 泵衬垫也可以被阳极化处理或以其它方式加工，以便增加衬套的发射率。

公开(公告)号：US06843881B2

公开(公告)日：2005-01-18

申请号：US10115526

申请日：2002-04-02

申请人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

发明人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  G01N21/76 ,  G05D27/02 ,  H01L21/306

CPC分类号： G05D27/02 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/76

摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

摘要翻译： 在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及 排气以排出清洁气体。 检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。 控制器接收信号并评估信号以确定清洁过程的端点。

公开(公告)号：US06391657B1

公开(公告)日：2002-05-21

申请号：US08598264

申请日：1996-02-07

申请人： Dieter Bernhardt ,  Albrecht Gröner ,  Thomas Nowak

发明人： Dieter Bernhardt ,  Albrecht Gröner ,  Thomas Nowak

IPC分类号： G01N33537

CPC分类号： C07K1/34

摘要： The invention relates to the removal of viruses from aqueous solutions, as a rule protein solutions, by ultrafiltration. This entails the viruses to be removed being increased in size by incubation with a high molecular weight receptor binding thereto, preferably a specific antibody, so that, on the one hand, the separation effect is improved and, on the other hand, a larger pore diameter which can now be chosen for the filters used also makes it possible for smaller viruses to be separated from larger protein molecules present in protein solutions, and, where appropriate, the filtration rate is increased.

摘要翻译： 本发明涉及通过超滤作为规则的蛋白质溶液从水溶液中除去病毒。 这导致通过与结合其的高分子量受体（优选特异性抗体）一起孵育来除去大小的病毒，从而一方面提高了分离效果，另一方面，较大的孔 现在可以选择用于所用过滤器的直径使得可以将较小的病毒与存在于蛋白质溶液中的较大的蛋白质分子分离，并且在适当的情况下，过滤速率增加。

公开(公告)号：US08702870B2

公开(公告)日：2014-04-22

申请号：US12987948

申请日：2011-01-10

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B9/093

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于 紫外线不到一分钟。 可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US08343881B2

公开(公告)日：2013-01-01

申请号：US12794713

申请日：2010-06-04

申请人： Yong-Won Lee ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Li-Qun Xia ,  Prahallad Iyengar ,  Sanjeev Baluja ,  Scott A Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Derek R Witty

发明人： Yong-Won Lee ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Li-Qun Xia ,  Prahallad Iyengar ,  Sanjeev Baluja ,  Scott A Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Derek R Witty

IPC分类号： H01L29/06 ,  H01L21/31 ,  C23C16/448

CPC分类号： H01L21/02271 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/0332 ,  H01L21/76898

摘要： A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.

摘要翻译： 使用包含BDEAS和含氧气体如臭氧的工艺气体将二氧化硅层沉积到衬底上。 二氧化硅层可以是包括抗蚀剂层的抗蚀刻堆叠的一部分。 在另一个版本中，二氧化硅层被沉积到通孔中以形成用于通硅通孔的氧化物衬垫。

公开(公告)号：US08216861B1

公开(公告)日：2012-07-10

申请号：US13171132

申请日：2011-06-28

申请人： Kang Sub Yim ,  Thomas Nowak ,  Bo Xie ,  Alexandros T. Demos

发明人： Kang Sub Yim ,  Thomas Nowak ,  Bo Xie ,  Alexandros T. Demos

IPC分类号： H01L21/00

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和含碳化合物的修复过程从孔中除去水，并进一步从低k膜结构中除去亲水性化合物。