Double patterning strategy for contact hole and trench in photolithography
    41.
    发明授权
    Double patterning strategy for contact hole and trench in photolithography 有权
    光刻中接触孔和沟槽的双重图案化策略

    公开(公告)号:US08450052B2

    公开(公告)日:2013-05-28

    申请号:US13274840

    申请日:2011-10-17

    CPC classification number: H01L21/0271 H01L21/31144

    Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.

    Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案,第一抗蚀剂图案在基板上包括多个开口; 在所述基板上和所述第一抗蚀剂图案的所述多个开口内形成第二抗蚀剂图案,所述第二抗蚀剂图案在所述基板上包括至少一个开口; 以及去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的基板。

    HIGH ETCH RESISTANT MATERIAL FOR DOUBLE PATTERNING
    43.
    发明申请
    HIGH ETCH RESISTANT MATERIAL FOR DOUBLE PATTERNING 有权
    高耐蚀材料双重图案

    公开(公告)号:US20100068656A1

    公开(公告)日:2010-03-18

    申请号:US12210737

    申请日:2008-09-15

    CPC classification number: H01L21/0273 G03F7/0035 G03F7/405 H01L21/3086

    Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

    Abstract translation: 本发明包括光刻方法,包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层,由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后,在衬底上形成第二图案化抗蚀剂层,其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内,或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

    Via plug formation in dual damascene process
    44.
    发明授权
    Via plug formation in dual damascene process 有权
    通过双镶嵌工艺中的塞子形成

    公开(公告)号:US07452822B2

    公开(公告)日:2008-11-18

    申请号:US11352815

    申请日:2006-02-13

    CPC classification number: H01L21/76808

    Abstract: A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

    Abstract translation: 一种用于在半导体器件制造工艺中形成双镶嵌结构的方法,其中可以包括覆盖在工艺表面上的塞子填充材料的厚度部分的通孔塞通过将酸扩散到塞填充材料层中,然后使酸与 塞子填充材料层以形成可溶部分,然后使用溶剂除去。 塞子填充材料的剩余部分被固化,并且可以在上覆的抗蚀剂层中的沟槽图案形成双重镶嵌结构之前,在工艺表面上形成BARC层。

    Chip antenna
    48.
    发明授权
    Chip antenna 有权
    芯片天线

    公开(公告)号:US06396460B2

    公开(公告)日:2002-05-28

    申请号:US09851310

    申请日:2001-05-09

    CPC classification number: H01Q1/243 H01Q1/36 H01Q1/38

    Abstract: The present invention relates to a chip antenna which comprises a substrate, a feeding pad, a feeding conductor, a matching unit, and a meandering conductor. The substrate formed with a dielectric material. By varying the length of the meandering conductor, the central frequency of the chip antenna can be properly obtained and controlled. The matching unit, which is formed by joining a matching conductor with a ground plate, uses the short-circuit function of the matching conductor to obtain the desired bandwidth. In this way, the chip antenna is well suited for applications in wireless communication systems, including personal mobile communication networks and equipment.

    Abstract translation: 芯片天线技术领域本发明涉及一种芯片天线,其包括基板,馈电垫,馈电导体,匹配单元和曲折导体。 基片由电介质材料形成。 通过改变曲折导体的长度,可以适当地获得和控制芯片天线的中心频率。 通过将匹配导体与接地板接合形成的匹配单元使用匹配导体的短路功能来获得期望的带宽。 以这种方式,芯片天线非常适合于包括个人移动通信网络和设备在内的无线通信系统中的应用。

    Thermal probe
    49.
    发明授权
    Thermal probe 有权
    热探头

    公开(公告)号:US08578511B2

    公开(公告)日:2013-11-05

    申请号:US13545647

    申请日:2012-07-10

    CPC classification number: G01Q60/38 G01Q60/40 G01Q60/42 G01Q60/58

    Abstract: A thermal probe includes a support element, a conductive pattern and a tip. The support element has a slit or a through hole and has a first surface and a second surface which is opposite to the first surface. The conductive pattern is disposed at the first surface. The tip has a base and a pinpoint. The pinpoint is disposed at the base and passes through the slit or the through hole and highlights from the first surface. The base is connected with the second surface. The tip of the thermal probe of the invention can be replaced, and user can choose the best combination of the tip, conductive pattern and support element according to their needs.

    Abstract translation: 热探针包括支撑元件,导电图案和尖端。 支撑元件具有狭缝或通孔,并且具有与第一表面相对的第一表面和第二表面。 导电图案设置在第一表面。 尖端具有基部和精确点。 精确位置设置在基座处并穿过狭缝或通孔并从第一表面突出。 基座与第二表面相连。 可以更换本发明的热探针的尖端,用户可以根据需要选择尖端,导电图案和支撑元件的最佳组合。

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