公开(公告)号：US20080128835A1

公开(公告)日：2008-06-05

申请号：US11746366

申请日：2007-05-09

申请人： Chia-Lin Chen ,  Liang-Gi Yao ,  Shih-Chang Chen

发明人： Chia-Lin Chen ,  Liang-Gi Yao ,  Shih-Chang Chen

IPC分类号： H01L29/78

CPC分类号： H01L21/28044 ,  C23C16/24 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/28052 ,  H01L29/4925

摘要： A semiconductor device having a random grained polysilicon layer and a method for its manufacture are provided. In one example, the device includes a semiconductor substrate and an insulator layer on the substrate. A first polysilicon layer having a random grained structure is positioned above the insulator layer, a semiconductor alloy layer is positioned above the first polysilicon layer, and a second polysilicon layer is positioned above the semiconductor alloy layer.

摘要翻译： 提供了具有随机晶粒多晶硅层的半导体器件及其制造方法。 在一个示例中，该器件在衬底上包括半导体衬底和绝缘体层。 具有随机晶粒结构的第一多晶硅层位于绝缘体层的上方，半导体合金层位于第一多晶硅层的上方，第二多晶硅层位于半导体合金层的上方。

公开(公告)号：US20070240826A1

公开(公告)日：2007-10-18

申请号：US11405618

申请日：2006-04-18

申请人： Liang-Gi Yao ,  Chia-Lin Chen ,  Ming-Feng Wang ,  Ming-Feng Yoo ,  Kuen-Chyr Lee ,  Shih-Chang Chen

发明人： Liang-Gi Yao ,  Chia-Lin Chen ,  Ming-Feng Wang ,  Ming-Feng Yoo ,  Kuen-Chyr Lee ,  Shih-Chang Chen

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67069

摘要： A gas supply device, including: a first source of an inert carrier gas, communicated with a first pipeline; a second source of anhydrous reactive gas, communicated with a second pipeline; a third source of enabling chemical gas of an enabling chemical compound, communicated with a third pipeline; a main pipeline, communicated with the first, second, and third pipelines; and a temperature controller, located on the second pipeline.

摘要翻译： 一种气体供应装置，包括：与第一管道连通的惰性载气的第一源; 与第二管道连通的第二无水反应气源; 与第三管道连通的使能化学化合物化学气体的第三个来源; 一条主要管道，与第一条，第二条和第三条管道通信; 和位于第二管道上的温度控制器。

公开(公告)号：US07268575B1

公开(公告)日：2007-09-11

申请号：US11278827

申请日：2006-04-06

申请人： Chia-Lin Chen ,  Ming-Chen Chen

发明人： Chia-Lin Chen ,  Ming-Chen Chen

IPC分类号： G01R31/26

CPC分类号： G01R31/2642 ,  G01R31/2858 ,  G01R31/3008

摘要： A method includes measuring a gate leakage current of at least one transistor. A single stress bias voltage is applied to the at least one transistor at a given temperature for a stress period t. The stress bias voltage causes a 10% degradation in a drive current of the transistor at the given temperature within the stress period t. A negative bias temperature instability (NBTI) lifetime τ of the transistor is estimated based on the measured gate leakage current and a relationship between drive current degradation and time observed during the applying step.

摘要翻译： 一种方法包括测量至少一个晶体管的栅极漏电流。 在给定温度下，对于至少一个晶体管施加单个应力偏置电压以施加应力周期t。 应力偏置电压在应力周期t内的给定温度下导致晶体管的驱动电流降低10％。 基于所测量的栅极泄漏电流和驱动电流劣化与施加步骤期间观察到的时间之间的关系来估计晶体管的负偏置温度不稳定性（NBTI）寿命ττ。

公开(公告)号：US20070181951A1

公开(公告)日：2007-08-09

申请号：US11349804

申请日：2006-02-08

申请人： Chia-Lin Chen ,  Min-Jan Chen ,  Jau-Jey Wang

发明人： Chia-Lin Chen ,  Min-Jan Chen ,  Jau-Jey Wang

IPC分类号： H01L29/76 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： A PMOS device less affected by negative bias time instability (NBTI) and a method for forming the same are provided. The PMOS device includes a barrier layer over at least a portion of a gate structure, a gate spacer, and source/drain regions of a PMOS device. A stressed layer is then formed over the barrier layer. The barrier layer is preferably an oxide layer and is preferably not formed for NMOS devices.

摘要翻译： 提供了较少受负偏压时间不稳定性（NBTI）影响的PMOS器件及其形成方法。 PMOS器件在PMOS器件的栅极结构，栅极间隔物和源极/漏极区域的至少一部分上包括阻挡层。 然后在阻挡层上形成应力层。 阻挡层优选为氧化物层，优选不为NMOS器件形成。

公开(公告)号：US06830996B2

公开(公告)日：2004-12-14

申请号：US10395345

申请日：2003-03-24

申请人： Chia-Lin Chen ,  Tze Liang Lee ,  Shih-Chang Chen

发明人： Chia-Lin Chen ,  Tze Liang Lee ,  Shih-Chang Chen

IPC分类号： H01L213205

CPC分类号： H01L21/28202 ,  H01L21/02052 ,  H01L21/321 ,  H01L29/518

摘要： The present disclosure provides a method is provided for fabricating a metal oxide semiconductor (MOS) gate stack on a semiconductor substrate. The method includes generating moisture on a surface of the semiconductor substrate to form an oxide layer less than 10 nanometers thin and performing a nitridation process on the thin oxide layer. After the nitridation process, the method includes performing a polysilicon deposition process on the surface of the semiconductor substrate, doping the polysilicon deposition to a level of 5×1015 at/cm3, and cleaning the doped polysilicon with a light ammonia solution.

摘要翻译： 本公开提供了一种用于在半导体衬底上制造金属氧化物半导体（MOS）栅极堆叠的方法。 该方法包括在半导体衬底的表面上产生湿气以形成小于10纳米薄的氧化物层，并对薄氧化物层进行氮化处理。 在氮化处理之后，该方法包括在半导体衬底的表面上执行多晶硅沉积工艺，将多晶硅沉积掺杂至5×10 15 at / cm 3的水平，并用轻氨溶液清洗掺杂的多晶硅。

公开(公告)号：USD960573S1

公开(公告)日：2022-08-16

申请号：US29737818

申请日：2020-06-11

申请人： Chia-Lin Chen

设计人： Chia-Lin Chen

公开(公告)号：US09406825B2

公开(公告)日：2016-08-02

申请号：US14720188

申请日：2015-05-22

申请人： Chia-Lin Chen

发明人： Chia-Lin Chen

IPC分类号： H01L31/00 ,  H01L31/043 ,  H01L31/0445 ,  H01L31/054

CPC分类号： H01L31/0543 ,  H02S40/22 ,  Y02E10/52

摘要： A stacked and integrated electric power generating device for capturing multiple light sources for power generation has a first concentrating photovoltaic module and a second concentrating photovoltaic module. The first concentrating photovoltaic module 10 has a transparent solar concentrating panel and a thin film solar cell. The second concentrating photovoltaic module is positioned below the first concentrating photovoltaic module with an interval, such that the first and second concentrating photovoltaic modules are in the form of a stacked and integrated structure, and the second concentrating photovoltaic module can absorb the light concentrated by the transparent solar concentrating panel to generate electric power.

摘要翻译： 用于捕获用于发电的多个光源的堆叠和集成的发电装置具有第一集中光伏模块和第二集中光伏模块。 第一聚光光伏模块10具有透明太阳能集中板和薄膜太阳能电池。 第二集中光伏模块以一定的间隔位于第一聚光光伏模块的下方，使得第一和第二集中光伏模块呈堆叠且一体化的结构，第二聚光光伏模块可以吸收由 透明的太阳能集中板产生电力。

公开(公告)号：US08889507B2

公开(公告)日：2014-11-18

申请号：US11765971

申请日：2007-06-20

申请人： Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

发明人： Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L49/02 ,  H01L27/108

CPC分类号： H01L27/10814 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/75

摘要： A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.

摘要翻译： 提供电容器及其形成方法。 该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

公开(公告)号：US20080236218A1

公开(公告)日：2008-10-02

申请号：US11694080

申请日：2007-03-30

申请人： Chia-Lin Chen

发明人： Chia-Lin Chen

IPC分类号： B60R25/02

CPC分类号： B60R25/0225 ,  Y10T70/5765

摘要： A steering wheel locking device includes a lock rod, a lock base, a locking device and a fixing unit. The lock rod has a chamber, two pairs of first holes longitudinally aligned, a lock hole and a saddle. The lock base comprises a lock core to be inserted into the lock base through the lock hole. The top of the lock core is provided with a latch. The locking device has a pair of second holes in register with the pairs of first holes of the lock rod, and is engageable with the latch and moveable transversely along the lock rod between a locked position and an unlocked position. The fixing unit comprises a pair of fixing rods in register with the pairs of first holes of the lock rod and the pair of second holes of the locking device. The fixing rods are moveable longitudinally through the pairs of first holes and the pair of second holes to lock or unlock the locking device.

摘要翻译： 方向盘锁定装置包括锁定杆，锁定基座，锁定装置和固定单元。 锁杆具有一个腔室，两对纵向排列的第一孔，一个锁孔和一个鞍座。 锁定基座包括通过锁定孔插入到锁定基座中的锁芯。 锁芯的顶部设有闩锁。 锁定装置具有与锁定杆的成对的第一孔对准的一对第二孔，并且能够与闩锁接合并且可在锁定位置和解锁位置之间沿着锁定杆横向移动。 定影单元包括一对与锁定杆的成对的第一孔对准的固定杆和锁定装置的一对第二孔。 固定杆可纵向移动穿过成对的第一孔和一对第二孔，以锁定或解锁锁定装置。

公开(公告)号：US06861339B2

公开(公告)日：2005-03-01

申请号：US10274570

申请日：2002-10-21

申请人： Chia-Lin Chen ,  Liang-Gi Yao ,  Shih-Chang Chen

发明人： Chia-Lin Chen ,  Liang-Gi Yao ,  Shih-Chang Chen

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/30 ,  H01L29/49 ,  H01L29/78 ,  H01L21/26

CPC分类号： H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L21/28035 ,  H01L21/3003 ,  H01L29/4925 ,  H01L29/78

摘要： Within a method for forming a silicon layer, there is employed at least one sub-layer formed of a higher crystalline silicon material and at least one sub-layer formed of a lower crystalline silicon material. The lower crystalline silicon material is formed employing a hydrogen treatment of the higher crystalline silicon material. The method is particularly useful for forming polysilicon based gate electrodes with enhanced dimensional control and enhanced performance.

摘要翻译： 在形成硅层的方法中，使用由较高结晶硅材料形成的至少一个子层和由下部结晶硅材料形成的至少一个子层。 使用较高结晶硅材料的氢处理形成下部结晶硅材料。 该方法对于形成具有增强尺寸控制和增强性能的多晶硅基栅电极特别有用。