公开(公告)号：US06646235B2

公开(公告)日：2003-11-11

申请号：US10037151

申请日：2001-10-19

申请人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

发明人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：US6156079A

公开(公告)日：2000-12-05

申请号：US176648

申请日：1998-10-21

申请人： Henry Ho ,  Yu Chang ,  Kuo-Chun Wu ,  Steven A. Chen

发明人： Henry Ho ,  Yu Chang ,  Kuo-Chun Wu ,  Steven A. Chen

IPC分类号： H01L21/00 ,  H05B3/00 ,  C23C16/00 ,  F26B19/00 ,  F27D11/00 ,  H01L21/64

CPC分类号： H01L21/67115 ,  H05B3/0047 ,  Y10T29/41

摘要： A semiconductor processing system includes a semiconductor processing chamber constructed of a main body, a window support member, and a window. The window support member is located over an opening into the main body. The window is located over the window support component. At least one radiation passage is formed in the window support component. The radiation passage has a first end which is open to the internal dimensions of the main body and a second end, opposing the first end, which terminates against the window.

摘要翻译： 半导体处理系统包括由主体，窗户支撑构件和窗构成的半导体处理室。 窗口支撑构件位于主体的开口的上方。 窗口位于窗口支撑组件的上方。 至少一个辐射通道形成在窗户支撑部件中。 辐射通道具有对主体的内部尺寸敞开的第一端和与第一端相对的第二端，该第二端终止于窗口。

公开(公告)号：US09150602B2

公开(公告)日：2015-10-06

申请号：US13556486

申请日：2012-07-24

申请人： Show-Wen Liu ,  Yu Chang ,  Cheng-Fang Hsu ,  Ming-Che Tsai ,  Tsung-Hsien Chiang ,  Yueh-Feng Deng ,  Kuei-Lin Lu ,  Chih-Yuan Lin ,  Da-Ming Wang ,  Ching-Yun Li

发明人： Show-Wen Liu ,  Yu Chang ,  Cheng-Fang Hsu ,  Ming-Che Tsai ,  Tsung-Hsien Chiang ,  Yueh-Feng Deng ,  Kuei-Lin Lu ,  Chih-Yuan Lin ,  Da-Ming Wang ,  Ching-Yun Li

IPC分类号： C07H15/18 ,  C07H1/00

CPC分类号： C07H15/18 ,  C07H1/00

摘要： A precursor used for labeling hepatocyte receptors and applied to radiotracers for imaging or pharmaceutical compositions for liver cancers is revealed. The precursor is a bifunctional compound. The bifunctional group includes a trisaccharide structure and a diamide dimercaptide (N2S2) ligand. The trisaccharide has high affinity to asialoglycoprotein receptors (ASGPR) on surfaces of hepatocytes while N2S2 ligand reacts with radioisotopes to form neutral complexes. Thus the precursor stays on surfaces of hepatocytes to provide radioisotope labeling or treatment effect of liver cancers.

摘要翻译： 用于标记肝细胞受体并应用于放射性示踪剂以用于肝癌成像的前体或用于肝癌的药物组合物。 前体是双官能化合物。 双官能团包括三糖结构和二酰胺二硫醇（N 2 S 2）配体。 三糖对肝细胞表面的脱唾液酸糖蛋白受体（ASGPR）具有高亲和力，而N2S2配体与放射性同位素反应形成中性复合物。 因此，前体停留在肝细胞的表面，以提供肝癌的放射性同位素标记或治疗效果。

公开(公告)号：US09045513B2

公开(公告)日：2015-06-02

申请号：US13571731

申请日：2012-08-10

申请人： Chih-Yuan Lin ,  Yu Chang ,  Jen-Tsung Wang ,  Cheng-Fang Hsu ,  Wei-Ti Kuo ,  Hung-Wen Yu ,  Wuu-Jyh Lin ,  Mei-Hui Wang

发明人： Chih-Yuan Lin ,  Yu Chang ,  Jen-Tsung Wang ,  Cheng-Fang Hsu ,  Wei-Ti Kuo ,  Hung-Wen Yu ,  Wuu-Jyh Lin ,  Mei-Hui Wang

IPC分类号： C07H15/04 ,  C07H1/06 ,  C07K1/13

CPC分类号： C07H1/06 ,  C07H15/04 ,  C07K1/13

摘要： A method for preparing a precursor used to label hepatocyte receptors is revealed. The precursor contains a bifunctional structure including trisaccharide and DTPA ligand. During synthesis processes of the precursor, silica gel columns and Reverse phase-18 (RP-18) columns are used for purification. Thus both the purification times and cost of each purification are reduced. Moreover, use diethyl ether to facilitate precipitation of products and remove a part of coupling reagent. Removing the coupling reagent helps purification of products. Furthermore, Nα,Nα-bis(carboxymethyl)-L-lysine hydrate and benzyl chloroformate are coupled to form a trisaccharide skeleton so as to ensure the yield rate of trisaccharide structure.

摘要翻译： 揭示了制备用于标记肝细胞受体的前体的方法。 该前体含有包括三糖和DTPA配体的双功能结构。 在前体的合成过程中，使用硅胶柱和反相18（RP-18）柱进行纯化。 因此，每次纯化的纯化时间和成本均降低。 此外，使用乙醚促进产物沉淀并除去一部分偶联剂。 去除偶联剂有助于净化产品。 此外，Nα，Nα-双（羧甲基）-L-赖氨酸水合物和氯甲酸苄酯偶联形成三糖骨架，以确保三糖结构的产率。

公开(公告)号：US20130118775A1

公开(公告)日：2013-05-16

申请号：US13811259

申请日：2011-07-19

申请人： Hua Chun Zeng ,  Shengmao Zhang ,  Yu Chang ,  Mei Ling Lye

发明人： Hua Chun Zeng ,  Shengmao Zhang ,  Yu Chang ,  Mei Ling Lye

IPC分类号： D01F9/08 ,  H01B1/16 ,  B05D5/12 ,  B32B15/14 ,  B05D3/00 ,  B32B37/02

CPC分类号： D01F9/08 ,  B05D3/207 ,  B05D5/12 ,  B22F1/0025 ,  B22F1/025 ,  B22F3/002 ,  B22F9/24 ,  B32B15/14 ,  B32B37/02 ,  B82Y30/00 ,  H01B1/16 ,  Y10T428/12528 ,  Y10T428/12569 ,  Y10T428/12903

摘要： The present invention relates to a method of forming copper nanowires with a metallic coating. In a preferred embodiment, the metallic coating is copper. Due to the metal coating, the nanowires become magnetically guidable and chemically stable. As such, the nanowires can be used to form nanomesh. Further, the nanowire and nanomesh of the present invention can be used as transparent electrodes that are used in TV, PC, touch-control, and solar industries.

摘要翻译： 本发明涉及一种用金属涂层形成铜纳米线的方法。 在优选实施例中，金属涂层是铜。 由于金属涂层，纳米线变得磁性引导和化学稳定。 因此，纳米线可用于形成纳米线。 此外，本发明的纳米线和纳米线可以用作TV，PC，触摸控制和太阳能工业中使用的透明电极。

公开(公告)号：US08114256B2

公开(公告)日：2012-02-14

申请号：US11948118

申请日：2007-11-30

申请人： Yu Chang ,  William Kuang ,  Ronald D Dedore ,  Jitendra R. Bhimjiyani ,  Wesley W Zhang

发明人： Yu Chang ,  William Kuang ,  Ronald D Dedore ,  Jitendra R. Bhimjiyani ,  Wesley W Zhang

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3455

摘要： A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.

摘要翻译： 一种用于控制两个电动机的控制系统和方法，所述两个电动机确定围绕其目标溅射背面的溅射室的中心轴线旋转的磁控管的方位角和圆周位置，并且能够以几乎任意的扫描路径，例如用行星齿轮机构。 系统控制器周期性地向控制电机的运动控制器发送命令。 每个命令包括一个命令票证，它可以是几个值之一。 运动控制器仅接受具有与前一个命令不同的命令票证的命令。 一个命令选择存储在运动控制器中的扫描轮廓，其从所选轮廓计算马达信号。 另一个命令指示动态归位命令，其询问两个旋转臂的位置的传感器以确定臂在预期位置。 如果没有，武器被重新安置。

公开(公告)号：US20080206987A1

公开(公告)日：2008-08-28

申请号：US12021798

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： H01L21/44

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

摘要翻译： 本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。 在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度 在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。 该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个 在后成核浸泡过程中还原气体。

公开(公告)号：US20080202425A1

公开(公告)日：2008-08-28

申请号：US12021825

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： C23C16/06

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

公开(公告)号：US20070150907A1

公开(公告)日：2007-06-28

申请号：US11406864

申请日：2006-04-19

申请人： Jenq Lee ,  Chung Chen ,  Yu Chang

发明人： Jenq Lee ,  Chung Chen ,  Yu Chang

IPC分类号： G06F9/46

CPC分类号： G06F9/505 ,  G06F9/4881 ,  G06F9/5038 ,  G06F2209/484 ,  G06F2209/5019

摘要： The present invention discloses a scheduling method for remote object procedure call and system thereof, by a two-phase scheduling mechanism to deal with the stateful and stateless invocations simultaneously. First, plural stateful invocations in a workflow are grouped into plural groups of stateful tasks. Then, the groups of stateful tasks are assigned to the server with the minimum load. Next, the rank of each of the stateful and stateless invocations is determined to form a scheduling sequence. An estimated finish time for each stateless invocation for each server is calculated and the stateless invocation is assigned to the server with the minimum estimated finish time.

摘要翻译： 本发明公开了一种用于远程对象过程调用的调度方法及其系统，通过两阶段调度机制同时处理有状态和无状态调用。 首先，工作流中的多个有状态调用被分组成多组状态任务。 然后，将有状态任务组分配给负载最小的服务器。 接下来，确定每个有状态和无状态调用的等级以形成调度序列。 计算每个服务器的每个无状态调用的估计完成时间，并且将无状态调用分配给具有最小估计完成时间的服务器。

公开(公告)号：US06500263B2

公开(公告)日：2002-12-31

申请号：US09817786

申请日：2001-03-26

申请人： Yu Chang ,  Wen Xiao Chen ,  Gwo-Chuan Tzu

发明人： Yu Chang ,  Wen Xiao Chen ,  Gwo-Chuan Tzu

IPC分类号： C23C16000

CPC分类号： H01L21/67253 ,  C23C16/44 ,  H01L21/67017

摘要： Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a lid used during maintenance operations is in place, flow of toxic gas to the chamber is interlocked, but flow of purge gas is permitted. When no lid is in place, all gas flow to the chamber is interlocked. The interlock arrangement may be implemented with two switches, both of which are actuated when the lid for normal processing is in place, and only one of which is actuated by the lid for the maintenance process.

摘要翻译： 提供了相对于化学气相沉积室的气流的多级互锁。 当用于正常加工的室盖盖就位时，没有联锁效果。 当维护操作中使用的盖子就位时，有毒气体流向腔室是互锁的，但允许吹扫气体流动。 当没有盖子就位时，所有流到腔室的气体是互锁的。 互锁装置可以用两个开关来实现，当开关用于正常加工时，两个开关都被致动，并且只有其中一个由用于维护过程的盖子致动。