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    Temperature controlled lid assembly for tungsten nitride deposition
    1.
    发明授权
    Temperature controlled lid assembly for tungsten nitride deposition 有权
    用于氮化钨沉积的温度控制盖组件

    公开(公告)号：US08821637B2

    公开(公告)日：2014-09-02

    申请号：US12021825

    申请日：2008-01-29

    申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    IPC分类号： C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

    摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

    摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

    PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY
    2.
    发明申请
    PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY 审中-公开
    通过温度控制的盖组件对硝酸镍沉积的方法

    公开(公告)号：US20080206987A1

    公开(公告)日：2008-08-28

    申请号：US12021798

    申请日：2008-01-29

    申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    IPC分类号： H01L21/44

    CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

    摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

    摘要翻译： 本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。 在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度 在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。 该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个 在后成核浸泡过程中还原气体。

    TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION
    3.
    发明申请
    TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION 有权
    用于硝酸铁沉积的温度控制组件

    公开(公告)号：US20080202425A1

    公开(公告)日：2008-08-28

    申请号：US12021825

    申请日：2008-01-29

    申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

    IPC分类号： C23C16/06

    CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

    摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

    摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

    Substrate support for substrate backside contamination control
    5.
    发明授权
    Substrate support for substrate backside contamination control 有权
    底物支撑底物污染控制

    公开(公告)号：US09490150B2

    公开(公告)日：2016-11-08

    申请号：US13540710

    申请日：2012-07-03

    申请人： Gwo-Chuan Tzu ,  Olkan Cuvalci ,  Yu Chang ,  Xiaoxiong Yuan

    发明人： Gwo-Chuan Tzu ,  Olkan Cuvalci ,  Yu Chang ,  Xiaoxiong Yuan

    IPC分类号： H01L21/67 ,  H05B3/14 ,  H01L21/687

    CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6875 ,  H05B3/143

    摘要： Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.

    摘要翻译： 本文提供了基板支撑件的实施例。 在一些实施例中，衬底支撑件可以包括用于支撑衬底的第一铝板，所述第一铝板具有嵌入其中的多个加热元件以提供多个加热区域; 设置在第一铝板下方并支撑第一铝板的第二铝板; 设置在第二铝板下方并支撑第二铝板的第三铝板; 设置在第一铝板顶上的非金属环; 以及多个间隔件，其具有设置在所述第一铝板的表面上方的上部，其中所述非金属环和所述多个间隔件将所述基板支撑在所述第一铝板的上方。

    Substrate support with substrate heater and symmetric RF return
    6.
    发明授权
    Substrate support with substrate heater and symmetric RF return 有权
    衬底支撑与衬底加热器和对称RF返回

    公开(公告)号：US08618446B2

    公开(公告)日：2013-12-31

    申请号：US13173471

    申请日：2011-06-30

    申请人： Yu Chang ,  Gwo-Chuan Tzu ,  Anqing Cui ,  William W. Kuang ,  Olkan Cuvalci

    发明人： Yu Chang ,  Gwo-Chuan Tzu ,  Anqing Cui ,  William W. Kuang ,  Olkan Cuvalci

    IPC分类号： A21B1/00 ,  C23C16/00

    CPC分类号： F27B17/0025 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/67248

    摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

    摘要翻译： 本文提供了用于处理基板的装置。 在一些实施例中，衬底支撑件包括衬底支撑表面和轴; 设置在所述衬底支撑件中的RF电极，靠近所述衬底支撑表面以从RF源接收RF电流; 设置在所述基板支撑表面附近的加热器，以在设置在所述基板支撑表面上时向所述基板提供热量，所述加热器具有一个或多个导线以向所述加热器提供电力; 当设置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部体积的导电元件，所述一个或多个导电线和所述热电偶设置穿过所述内部体积，所述导电元件耦合到所述RF电极，并且当RF电流流过所述内部体积时具有约零的电场 导电元件。

    Semiconductor substrate processing chamber having interchangeable lids actuating plural gas interlock levels
    7.
    发明授权
    Semiconductor substrate processing chamber having interchangeable lids actuating plural gas interlock levels 有权
    半导体衬底处理室具有可互换的盖子，致动多个气体互锁水平

    公开(公告)号：US06500263B2

    公开(公告)日：2002-12-31

    申请号：US09817786

    申请日：2001-03-26

    申请人： Yu Chang ,  Wen Xiao Chen ,  Gwo-Chuan Tzu

    发明人： Yu Chang ,  Wen Xiao Chen ,  Gwo-Chuan Tzu

    IPC分类号： C23C16000

    CPC分类号： H01L21/67253 ,  C23C16/44 ,  H01L21/67017

    摘要： Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a lid used during maintenance operations is in place, flow of toxic gas to the chamber is interlocked, but flow of purge gas is permitted. When no lid is in place, all gas flow to the chamber is interlocked. The interlock arrangement may be implemented with two switches, both of which are actuated when the lid for normal processing is in place, and only one of which is actuated by the lid for the maintenance process.

    摘要翻译： 提供了相对于化学气相沉积室的气流的多级互锁。 当用于正常加工的室盖盖就位时，没有联锁效果。 当维护操作中使用的盖子就位时，有毒气体流向腔室是互锁的，但允许吹扫气体流动。 当没有盖子就位时，所有流到腔室的气体是互锁的。 互锁装置可以用两个开关来实现，当开关用于正常加工时，两个开关都被致动，并且只有其中一个由用于维护过程的盖子致动。

    PLASMA REACTOR WITH A CEILING ELECTRODE SUPPLY CONDUIT HAVING A SUCCESSION OF VOLTAGE DROP ELEMENTS
    10.
    发明申请
    PLASMA REACTOR WITH A CEILING ELECTRODE SUPPLY CONDUIT HAVING A SUCCESSION OF VOLTAGE DROP ELEMENTS 有权
    具有带电压下降元件继电器的天花板电极管的等离子体反应器

    公开(公告)号：US20100096085A1

    公开(公告)日：2010-04-22

    申请号：US12255492

    申请日：2008-10-21

    申请人： OLKAN CUVALCI ,  Yu Chang ,  William Kuang ,  Anqing Cui ,  Seshadri Ganguli

    发明人： OLKAN CUVALCI ,  Yu Chang ,  William Kuang ,  Anqing Cui ,  Seshadri Ganguli

    IPC分类号： C23F1/08 ,  C23C16/44

    CPC分类号： H01J37/3244 ,  C23C16/455 ,  H01J37/32091 ,  H01J37/32541

    摘要： A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.

    摘要翻译： 桥组件包括具有一对端部的电绝缘中空管或桥，所述桥被支撑在所述圆柱形侧壁上的一端，并且在所述电极的另一端支撑。 桥接组件还包括围绕中空管并且沿着桥的长度彼此间隔开的一组导电环，以及多个电阻元件。 每个电阻元件具有一对柔性连接器，相应的电阻元件在相应的成对环之间的柔性连接器处连接以形成串联电阻器组件。