ELECTRONIC DEVICE MODULE COMPRISING POLYOLEFIN COPOLYMER
    41.
    发明申请
    ELECTRONIC DEVICE MODULE COMPRISING POLYOLEFIN COPOLYMER 有权
    包含聚烯烃共聚物的电子器件模块

    公开(公告)号:US20130118583A1

    公开(公告)日:2013-05-16

    申请号:US13667744

    申请日:2012-11-02

    Abstract: An electronic device module comprising: A. At least one electronic device, e.g., a solar cell, and B. A polymeric material in intimate contact with at least one surface of the electronic device, the polymeric material comprising (1) a polyolefin copolymer with at least one of (a) a density of less than about 0.90 g/cc, (b) a 2% secant modulus of less than about 150 megaPascal (mPa) as measured by ASTM D-882-02), (c) a melt point of less than about 95 C, (d) an ∀-olefin content of at least about 15 and less than about 50 wt % based on the weight of the polymer, (e) a Tg of less than about −35 C, and (f) a SCBDI of at least about 50, (2) optionally, free radical initiator, e.g., a peroxide or azo compound, or a photoinitiator, e.g., benzophenone, and (3) optionally, a co-agent. Typically, the polyolefin copolymer is an ethylene/∀-olefin copolymer. Optionally, the polymeric material can further comprise a vinyl silane and/or a scorch inhibitor, and the copolymer can remain uncrosslinked or be crosslinked.

    Abstract translation: 一种电子设备模块,包括:A.至少一个电子设备,例如太阳能电池和B.与所述电子设备的至少一个表面紧密接触的聚合物材料,所述聚合材料包含(1)聚烯烃共聚物, (a)小于约0.90g / cc的密度,(b)通过ASTM D-882-02测量的小于约150兆帕(mPa)的2%割线模量中的至少一个),(c) 熔点小于约95℃,(d)基于聚合物的重量,至少约15至小于约50重量%的烯烃含量,(e)小于约-35℃的Tg, 和(f)至少约50的SCBDI,(2)任选的自由基引发剂,例如过氧化物或偶氮化合物,或光引发剂,例如二苯甲酮,和(3)任选的助剂。 通常,聚烯烃共聚物是乙烯/∀-烯烃共聚物。 任选地,聚合物材料还可以包含乙烯基硅烷和/或焦烧抑制剂,并且共聚物可保持未交联或交联。

    Conductor Jacket and Process for Producing Same

    公开(公告)号:US20200087494A1

    公开(公告)日:2020-03-19

    申请号:US16470726

    申请日:2017-12-18

    Abstract: The present disclosure provides a process. In an embodiment, the process includes blending a broad molecular weight distribution (MWD) ethylene-based polymer having an 121/12 ratio from 55 to 85 with a narrow MWD ethylene-based polymer having an 121/12 ratio from 20 to 50. The process includes forming a blend component comprising from 20 wt % to 45 wt % of the broad MWD ethylene-based polymer, from 80 wt % to 55 wt % of the narrow MWD ethylene-based polymer, and optional carbon black. The blend component has a density from 0.925 g/cc to 0.955 g/cc and an 121/12 ratio from 30 to 55. The process includes extruding the blend component over a conductor at a rate greater than 1.02 m/s, and forming a conductor jacket having a surface smoothness from 30 μ-inch to 80 μ-inch.

Patent Agency Ranking