摘要:
A processing assembly for a semiconductor workpiece generally includes a rotor assembly capable of spinning a workpiece, a chemistry delivery assembly for delivering chemistry to the workpiece, and a chemistry collection assembly for collecting spent chemistry from the workpiece. The chemistry collection assembly may include a weir that is configured to spin with the rotor assembly. A method of processing a semiconductor workpiece is also provided.
摘要:
A centrifugal workpiece processor for processing semiconductor wafers and similar workpieces includes a head which holds and spins the workpiece. The head includes a rotor having a gas system. Gas is sprayed or jetted from inlets in the rotor to create a rotational gas flow. The rotational gas flow causes pressure conditions which hold the edges of a first side of the workpiece against contact pins or surfaces on the rotor. The rotor and the workpiece rotate together. Guide pins adjacent to a perimeter may help to align the workpiece with the rotor. An angled surface helps to deflect spent process liquid away from the workpiece. The head is moveable into multiple different engagement positions with a bowl. Spray nozzles in the bowl spray a process liquid onto the second side of the workpiece, as the workpiece is spinning, to process the workpiece. A moving end point detector may be used to detect an end point of processing.
摘要:
Methods and systems for electrochemically processing microfeature workpieces are described herein. In one embodiment, a process for electrochemically treating a surface of a plurality of microfeature workpieces in an electrochemical treating chamber that includes a processing unit separated from an electrode unit by an ion-permeable barrier is described. The process involves an idle stage wherein during the idle stage, processing fluid components are prevented from transferring between the first processing fluid and the second processing fluid. The described system includes a flow control system for controlling the flow of processing fluid to achieve separation of a processing fluid from the barrier during the idle stage.
摘要:
An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.
摘要:
A processing container (610) for providing a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece is set forth. The processing container comprises a principal fluid flow chamber (505) providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles (535) disposed to provide a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged and directed to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the surface of the workpiece. An exemplary apparatus using such a processing container is also set forth that is particularly adapted to carry out an electroplating process. In accordance with a further aspect of the present disclosure, an improved fluid removal path (640) is provided for removing fluid from a principal fluid flow chamber during immersion processing of a microelectronic workpiece.
摘要:
A system for processing a workpiece includes a process head assembly and a base assembly. The process head assembly has a process head and an upper rotor. The base assembly has a base and a lower rotor. The base and lower rotor have magnets wherein the upper rotor is engageable with the lower rotor via a magnetic force created by the magnets. The engaged upper and lower rotors form a process chamber where a semiconductor wafer is positioned for processing. Process fluids for treating the workpiece are introduced into the process chamber, optionally while the processing head spins the workpiece. Additionally, air flow around and through the process chamber is managed to reduce particle adders on the workpiece.
摘要:
A system and method for processing a workpiece, includes workpiece processors. A robot is moveable within an enclosure to load and unload workpieces into and out of the processors. A processor includes an upper rotor having a central air flow opening. The upper rotor is magnetically driven into engagement with a lower rotor to form a workpiece processing chamber. A moveable drain mechanism aligns different drain paths with the processing chamber so that different processing fluids may be removed from the processing chamber via different drain paths. A moveable nozzle positioned in the air flow opening distributes processing fluid to the workpiece. The processing fluid is distributed across the workpiece surface, via centrifugal force generated by spinning the processing chamber, and removed from the processing chamber via the moveable drain mechanism.
摘要:
A semiconductor processing workpiece support which includes a detection subsystem that detects whether a wafer or other workpiece is present. The preferred arrangement uses an optical beam emitter and an optical beam detector mounted along the back side of a rotor which acts as a workpiece holder. The emitted beam passes through the workpiece holder and is reflected by any workpiece present in the Workpiece holder. The preferred units include both an optical emitter and pair of detectors. The detection is preferably able to discriminate on the basis of the angle of the reflected beam, so that a portion of the beam reflected by the workpiece holder is not considered or minimized.
摘要:
An electrochemical processor may include a head having a rotor configured to hold a workpiece, with the head moveable to position the rotor in a vessel. Inner and outer anodes are in inner and outer anolyte chambers within the vessel. An upper cup in the vessel, has a curved upper surface and inner and outer catholyte chambers. A current thief is located adjacent to the curved upper surface. Annular slots in the curved upper curved surface connect into passageways, such as tubes, leading into the outer catholyte chamber. Membranes may separate the inner and outer anolyte chambers from the inner and outer catholyte chambers, respectively.
摘要:
Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.