公开(公告)号：US11767595B2

公开(公告)日：2023-09-26

申请号：US18158061

申请日：2023-01-23

申请人： FUJIFILM Corporation

发明人： Atsushi Mizutani

IPC分类号： C23F1/30

CPC分类号： C23F1/30

摘要： The present invention provides a chemical liquid that has an excellent ruthenium dissolving ability and leaves small amounts of residual ruthenium and sodium, a chemical liquid container, and a method for treating a substrate. The chemical liquid according to an embodiment of the present invention is a chemical liquid used for removing a ruthenium-containing substance on a substrate. The chemical liquid contains hypochlorous acid or a salt thereof and bromic acid or a salt thereof, in which a content of the hypochlorous acid or a salt thereof is 0.1% to 9.0% by mass with respect to a total mass of the chemical liquid, and a content of the bromic acid or a salt thereof is 0.001 to 15.0 ppm by mass with respect to the total mass of the chemical liquid.

公开(公告)号：US11145514B2

公开(公告)日：2021-10-12

申请号：US15647351

申请日：2017-07-12

申请人： FUJIFILM Corporation

发明人： Satomi Takahashi ,  Seongmu Bak ,  Atsushi Mizutani ,  Tadashi Inaba

IPC分类号： H01L21/304 ,  H01L21/02 ,  C07D213/70 ,  H01L21/311 ,  C07D249/12 ,  C07D239/40 ,  C07C323/12 ,  C07C323/52 ,  C07C323/58 ,  H01L21/306 ,  C07C321/04 ,  C07C321/22 ,  C07C321/26 ,  C22B30/04 ,  C22B58/00 ,  H01L21/308

摘要： Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

公开(公告)号：US10435794B2

公开(公告)日：2019-10-08

申请号：US14927697

申请日：2015-10-30

申请人： FUJIFILM Corporation

发明人： Naotsugu Muro ,  Tetsuya Kamimura ,  Satomi Takahashi ,  Akiko Koyama ,  Atsushi Mizutani

IPC分类号： C23F1/30 ,  H01L21/3213 ,  C23F1/28 ,  C23F1/26 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78

摘要： There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.

公开(公告)号：US10403491B2

公开(公告)日：2019-09-03

申请号：US15854778

申请日：2017-12-27

申请人： FUJIFILM Corporation

发明人： Atsushi Mizutani ,  Tadashi Inaba

IPC分类号： H01L21/02 ,  B08B3/08 ,  C08K3/16 ,  C08K5/17 ,  B81C1/00

摘要： Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

公开(公告)号：US10199210B2

公开(公告)日：2019-02-05

申请号：US15152676

申请日：2016-05-12

申请人： FUJIFILM Corporation

发明人： Tetsuya Kamimura ,  Yasuo Sugishima ,  Atsushi Mizutani

IPC分类号： C11D7/32 ,  H01L21/02 ,  H01L21/311 ,  G03F7/42 ,  B08B3/04 ,  B08B3/08 ,  B08B3/10 ,  B08B7/00 ,  B08B9/00 ,  C11D7/26 ,  C11D11/00 ,  H01L21/3105 ,  C11D3/00 ,  C11D3/37 ,  H01L21/8238

摘要： Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.

公开(公告)号：US09809746B2

公开(公告)日：2017-11-07

申请号：US14956500

申请日：2015-12-02

申请人： FUJIFILM Corporation

发明人： Yasuo Sugishima ,  Atsushi Mizutani ,  Keeyoung Park

IPC分类号： C09K13/06 ,  C09K13/08 ,  H01L21/3213

CPC分类号： C09K13/08 ,  H01L21/32134

摘要： There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

公开(公告)号：US09514958B2

公开(公告)日：2016-12-06

申请号：US14722811

申请日：2015-05-27

申请人： FUJIFILM Corporation

发明人： Yoshinori Nishiwaki ,  Tetsuya Kamimura ,  Tadashi Inaba ,  Atsushi Mizutani

IPC分类号： H01L21/302 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/32134 ,  C09K13/00 ,  H01L21/02063 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139

摘要： An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

摘要翻译： 一种蚀刻方法，包括通过使蚀刻液体与基板接触从而去除第一层，来处理具有包含氮化钛（TiN）的第一层的基板和包含过渡金属的第二层的步骤，其中第一层具有 表面氧含量为0.1〜10摩尔％，其中，蚀刻液含有氨化合物和氧化剂，pH为7〜14。

公开(公告)号：US20240337013A1

公开(公告)日：2024-10-10

申请号：US18746869

申请日：2024-06-18

申请人： FUJIFILM Corporation

发明人： Atsushi Mizutani ,  Akihiro Hakamata ,  Koichi Sato

IPC分类号： C23C16/04 ,  C23C16/06 ,  C23C16/56 ,  H01L21/02

CPC分类号： C23C16/04 ,  C23C16/06 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02664

摘要： An object of the present invention is to provide a chemical liquid for manufacturing a semiconductor, which is capable of forming an ALD film in a region targeted for ALD film formation and suppressing the formation of an ALD film in a region not targeted for ALD film formation, in a case where an ALD treatment is carried out after bringing the chemical liquid into contact with a predetermined substrate to form a modified film. Another object of the present invention is to provide a manufacturing method of a modified substrate using the above-mentioned chemical liquid, a manufacturing method of a laminate, and a chemical liquid container.
The chemical liquid for manufacturing a semiconductor of the present invention is a chemical liquid for manufacturing a semiconductor including a compound A having a specific functional group, an organic solvent, and a specific metal atom, in which a content of the compound A is more than 10 ppm by mass with respect to a total mass of the chemical liquid, a total content of the specific metal atom is 1,000 ppt by mass or less with respect to the total mass of the chemical liquid, a mass ratio of the content of the compound A to the content of the specific metal atom is 104 to 109, and a content of water contained in the chemical liquid is 1% by mass or less.

公开(公告)号：US20230340326A1

公开(公告)日：2023-10-26

申请号：US18341929

申请日：2023-06-27

申请人： FUJIFILM Corporation

发明人： Nobuaki SUGIMURA ,  Tomonori Takahashi ,  Hiroyuki Seki ,  Atsushi Mizutani

IPC分类号： C09K13/04 ,  H01L21/02 ,  H01L21/3213

CPC分类号： C09K13/04 ,  H01L21/02071 ,  H01L21/32134

摘要： A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.

公开(公告)号：US11732190B2

公开(公告)日：2023-08-22

申请号：US16940515

申请日：2020-07-28

申请人： FUJIFILM Corporation

发明人： Nobuaki Sugimura ,  Tomonori Takahashi ,  Hiroyuki Seki ,  Atsushi Mizutani

IPC分类号： C09K13/04 ,  H01L21/02 ,  H01L21/3213

CPC分类号： C09K13/04 ,  H01L21/02071 ,  H01L21/32134

摘要： The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.