公开(公告)号：US20050221002A1

公开(公告)日：2005-10-06

申请号：US10814768

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/16

摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.

摘要翻译： 一种在处理室中的陶瓷基板加热器上处理基板的方法。 该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。 该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

公开(公告)号：US08679913B2

公开(公告)日：2014-03-25

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/8242 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US08674273B2

公开(公告)日：2014-03-18

申请号：US13040697

申请日：2011-03-04

申请人： Tomihiro Yonenaga ,  Yumiko Kawano

发明人： Tomihiro Yonenaga ,  Yumiko Kawano

IPC分类号： H05B6/10 ,  C23C16/00

CPC分类号： C23C16/46 ,  H01L21/67109 ,  H05B6/105 ,  H05B6/365 ,  H05B6/44

摘要： Provided is a heat treatment apparatus which, when simultaneously heating substrates placed on susceptors, is capable of controlling the uniformity of temperature within each substrate. The heat treatment apparatus includes: a reaction tube which performs predetermined treatment to wafers; a plurality of susceptors each of which has a mounting surface for mounting the wafer and is made of a conductive material; a rotatable quartz boat wherein the susceptors spaced apart in a direction perpendicular to the mounting surfaces are arranged and supported in the reaction tube; a magnetic field generating unit which is arranged on a sidewall of the processing chamber and includes a pair of electromagnets which generate an AC magnetic field in a direction parallel to the mounting surfaces of the susceptors and inductively heat the susceptors; and a control unit which controls the AC magnetic field generated by the magnetic field generating unit.

摘要翻译： 提供一种热处理装置，当同时加热放置在基座上的基板时，能够控制每个基板内的温度均匀性。 热处理装置包括：对晶片进行预定处理的反应管; 多个感受体具有用于安装晶片并由导电材料制成的安装表面; 一个可旋转的石英舟，其中在垂直于安装表面的方向间隔开的基座被布置和支撑在反应管中; 磁场产生单元，其布置在所述处理室的侧壁上，并且包括一对电磁体，所述一对电磁体在平行于所述基座的安装表面的方向上产生交流磁场并感应加热所述基座; 以及控制单元，其控制由磁场产生单元产生的交流磁场。

公开(公告)号：US20110248024A1

公开(公告)日：2011-10-13

申请号：US13092650

申请日：2011-04-22

申请人： Tomihiro YONENAGA ,  Yumiko Kawano

发明人： Tomihiro YONENAGA ,  Yumiko Kawano

IPC分类号： H05B6/10

CPC分类号： H01L21/67109 ,  H01L21/67303

摘要： In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit.

摘要翻译： 在分别加热放置在多个基座上的基板时，均匀地控制每个基板的面内温度。 一种热处理设备设置有基座，即用于在其上放置晶片的导电构件，具有电分割成其中心部分的感应加热体及其周边部分; 支撑排列成一排的基座的石英舟; 感应线圈，其布置在处理室内部以围绕每个基座的圆周并且被配置为使得感应线圈的温度可以自由地调节; 以及控制单元，其通过改变感应加热体的中心部分的热值与周边部分的热值之比，通过从高电平控制施加到感应线圈的不同频率的两个高频电流来进行温度控制 频率电流电路。

公开(公告)号：US20110014797A1

公开(公告)日：2011-01-20

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/30

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US07105060B2

公开(公告)日：2006-09-12

申请号：US10917334

申请日：2004-08-13

申请人： Yukihiro Shimogaki ,  Yumiko Kawano

发明人： Yukihiro Shimogaki ,  Yumiko Kawano

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/18 ,  C23C16/30

CPC分类号： H01L28/75 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/28556

摘要： A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

公开(公告)号：US5904557A

公开(公告)日：1999-05-18

申请号：US794936

申请日：1997-02-04

申请人： Takayuki Komiya ,  Yumiko Kawano

发明人： Takayuki Komiya ,  Yumiko Kawano

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76883 ,  H01L23/53214 ,  H01L21/31053 ,  H01L2924/0002

摘要： A method for forming a multilevel interconnection of a semiconductor device of the present invention includes the steps of forming a first wiring layer by depositing a metallic film containing aluminum on an insulating film of a substrate and patterning the metallic film, forming an interlayer insulating film on the entire surface of the substrate to cover the wiring layer from the upper side, forming a connection hole reaching to the first wiring layer at a predetermined position of the interlayer insulating film, selectively depositing aluminum onto an interior of the connection hole at a volume fraction of 100% or more by CVD to fill the interior of the connection hole, flattening the entire upper surface of the interlayer insulating film including the connection hole filled with aluminum by a polishing process, washing the entire surface flattened by the polishing process, and depositing the metallic film containing aluminum at a predetermined position of the upper surface of the flattened and washed interlayer insulating film and patterning the metallic film, thereby forming a second wiring layer connected to the first wiring layer through aluminum filled in the connection hole.

摘要翻译： 形成本发明的半导体器件的多层互连的方法包括以下步骤：通过在衬底的绝缘膜上沉积包含铝的金属膜形成第一布线层并对金属膜进行图案化，形成层间绝缘膜 基板的整个表面从上侧覆盖布线层，在层间绝缘膜的预定位置处形成到达第一布线层的连接孔，以选择性的方式将铝沉积到连接孔的内部，体积分数 通过CVD填充100％以上以填充连接孔的内部，通过抛光处理使包括填充有铝的连接孔的层间绝缘膜的整个上表面变平，洗涤通过抛光处理而变平的整个表面，以及沉积 在f的上表面的预定位置处含有铝的金属膜 拉延和洗涤的层间绝缘膜并图案化金属膜，从而形成通过填充在连接孔中的铝连接到第一布线层的第二布线层。

公开(公告)号：US08927060B2

公开(公告)日：2015-01-06

申请号：US13377199

申请日：2010-06-02

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： C23C16/00 ,  C23C16/06 ,  H01L45/00 ,  C23C16/30 ,  G11B7/2433 ,  G11B7/26 ,  G11B7/243

CPC分类号： H01L45/144 ,  C23C16/305 ,  G11B7/2433 ,  G11B7/266 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/1616

摘要： There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.

摘要翻译： 提供了通过使用气态Ge源材料，气态Sb源材料和气态Te源材料的CVD方法在基板上形成具有Ge 2 Sb 2 Te 5组成的Ge-Sb-Te膜的方法。 该方法包括将衬底加载到处理室内（工艺1）; 通过供给气态Ge源材料和气态Sb源材料，在基板上进行第一阶段成膜工序（工序2）。 并且通过供给气态Sb源材料和气态Te源材料，在通过第一阶段成膜工艺获得的膜上进行第二阶段成膜工艺（工艺3）。 Ge-Sb-Te膜由通过方法2获得的膜和通过方法3获得的膜形成。

公开(公告)号：US08658951B2

公开(公告)日：2014-02-25

申请号：US13092650

申请日：2011-04-22

申请人： Tomihiro Yonenaga ,  Yumiko Kawano

发明人： Tomihiro Yonenaga ,  Yumiko Kawano

IPC分类号： H05B6/10

CPC分类号： H01L21/67109 ,  H01L21/67303

摘要： In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit.

摘要翻译： 在分别加热放置在多个基座上的基板时，均匀地控制每个基板的面内温度。 一种热处理设备设置有基座，即用于在其上放置晶片的导电构件，具有电分割成其中心部分的感应加热体及其周边部分; 支撑排列成一排的基座的石英舟; 感应线圈，其布置在处理室内部以围绕每个基座的圆周并且被配置为使得感应线圈的温度可以自由地调节; 以及控制单元，其通过改变感应加热体的中心部分的热值与周边部分的热值之比，通过从高电平控制施加到感应线圈的不同频率的两个高频电流来进行温度控制 频率电流电路。

公开(公告)号：US20130183446A1

公开(公告)日：2013-07-18

申请号：US13825579

申请日：2011-09-05

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： C23C16/06 ,  C23C16/44

CPC分类号： C23C16/06 ,  C23C16/305 ,  C23C16/44 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

摘要： Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD. The method for forming a Ge—Sb—Te film comprises: a step (step 2) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5, is formed on the substrate; and a step (step 3) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

摘要翻译： 公开了一种形成Ge-Sb-Te膜的方法，其中将衬底设置在处理室内，气态Ge材料，气态Sb材料和Te材料被引入处理室中，使得Ge 由Ge2Sb2Te5形成的-Sb-Te膜通过CVD形成在基板上。 形成Ge-Sb-Te膜的方法包括：步骤（步骤2），其中气态Ge材料和气态Sb材料或替代地少量气态Te材料不足以形成Ge2Sb2Te5，除了气体 将Ge材料和气态Sb材料引入处理室，使得在基板上形成不含Te或含有Te的量的前体膜，其量小于Ge 2 Sb 2 Te 5中的Te; 和步骤（步骤3），其中将气态Te材料引入处理室，并使前体膜吸附Te，从而调节膜中的Te浓度。