公开(公告)号：US08129724B2

公开(公告)日：2012-03-06

申请号：US12613598

申请日：2009-11-06

申请人： Takuo Kaitoh ,  Toshio Miyazawa

发明人： Takuo Kaitoh ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L29/78618 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66765

摘要： A display device including a transparent substrate, and a plurality of thin film transistors formed on the transparent substrate, wherein each of the thin film transistors have a gate electrode, a source electrode and a drain electrode, a first semiconductor film, an insulation film, a second semiconductor film, and a third semiconductor film. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact, and the second semiconductor film is formed below the third semiconductor film and has a resistance higher than resistance of the third semiconductor film.

摘要翻译： 一种显示装置，包括透明基板和形成在透明基板上的多个薄膜晶体管，其中每个薄膜晶体管具有栅电极，源电极和漏电极，第一半导体膜，绝缘膜， 第二半导体膜和第三半导体膜。 第三半导体膜通过欧姆接触与源电极和漏电极连接，第二半导体膜形成在第三半导体膜的下方，并且具有比第三半导体膜的电阻高的电阻。

公开(公告)号：US08124975B2

公开(公告)日：2012-02-28

申请号：US12608147

申请日：2009-10-29

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hiroyuki Abe

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hiroyuki Abe

IPC分类号： H01L33/00

CPC分类号： H01L29/78645 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627

摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.

摘要翻译： 提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。 在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生 的漏光电流。

公开(公告)号：US20100230675A1

公开(公告)日：2010-09-16

申请号：US12702975

申请日：2010-02-09

申请人： Katsumi Matsumoto ,  Hideki Nakagawa ,  Yoshiharu Owaku ,  Terunori Saitou ,  Toshio Miyazawa ,  Takahiro Kamo ,  Takuo Kaitoh

发明人： Katsumi Matsumoto ,  Hideki Nakagawa ,  Yoshiharu Owaku ,  Terunori Saitou ,  Toshio Miyazawa ,  Takahiro Kamo ,  Takuo Kaitoh

IPC分类号： H01L33/16 ,  H01L33/02

CPC分类号： G06F3/0412 ,  G02F1/1362 ,  G02F2001/13312 ,  G06F3/042 ,  H01L27/3227 ,  H01L27/323 ,  H01L27/3269

摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.

摘要翻译： 提供了具有优异的光电转换效率的光传感器的显示装置。 在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到 半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

公开(公告)号：US20100032674A1

公开(公告)日：2010-02-11

申请号：US12536097

申请日：2009-08-05

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

IPC分类号： H01L33/00

CPC分类号： G02F1/13624 ,  G02F2202/104

摘要： An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor.

摘要翻译： 本发明的目的是提供一种可以形成具有较低截止电流的小型薄膜晶体管的显示装置。 本发明提供了一种在基板上形成薄膜晶体管的显示装置，在上述薄膜晶体管中，在半导体层之间形成有栅极绝缘膜的栅电极，上述薄膜晶体管 由至少第一薄膜晶体管和第二薄膜晶体管形成，并且上述半导体层被分成用于每个薄膜晶体管的各个区域，上述半导体层设置有共同区域，其共同区域由 上述第一薄膜晶体管和上述第二薄膜晶体管的源极区域或上述第一薄膜晶体管的源极区域和上述第二薄膜晶体管的漏极区域在第一薄膜 晶体管和第二薄膜晶体管，半导体层设置有LDD区，其中杂质c 浓度低于上述漏极区域和上述源极区域，沟道区域和漏极区域之间以及沟道区域和源极区域之间，并且上述栅极电极形成为重叠 在上述半导体层中具有上述公共区域并且至少面向上述第一薄膜晶体管的上述沟道区域和上述LDD区域以及上述沟道区域和上述上述LDD区域 描述的第二薄膜晶体管。

公开(公告)号：US20090218574A1

公开(公告)日：2009-09-03

申请号：US12379095

申请日：2009-02-12

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda ,  Takeshi Kuriyagawa

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda ,  Takeshi Kuriyagawa

IPC分类号： H01L33/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78621

摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.

摘要翻译： 显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层 绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极， 在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。

公开(公告)号：US08258024B2

公开(公告)日：2012-09-04

申请号：US12606284

申请日：2009-10-27

申请人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

发明人： Mieko Matsumura ,  Mutsuko Hatano ,  Yoshiaki Toyota ,  Takuo Kaitoh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78696

摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.

摘要翻译： 提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。 该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成 的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。 在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

公开(公告)号：US06344885B1

公开(公告)日：2002-02-05

申请号：US09285025

申请日：1999-04-01

申请人： Ikuko Mori ,  Takuo Kaitoh ,  Hironobu Abe ,  Masahiro Eto ,  Toshihiro Satoh ,  Kazuhiro Ishida ,  Hajime Kudoh

发明人： Ikuko Mori ,  Takuo Kaitoh ,  Hironobu Abe ,  Masahiro Eto ,  Toshihiro Satoh ,  Kazuhiro Ishida ,  Hajime Kudoh

IPC分类号： G02F1136

CPC分类号： G02F1/136213 ,  G02F1/136209 ,  G02F2202/104 ,  H01L29/6675 ,  H01L29/78633 ,  H01L29/78648

摘要： A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second substrate and a liquid crystal sandwiched between the first substrate and the second substrate. The liquid crystal display device further comprises semiconductor elements (FG) formed over the first substrate and arranged in a matrix, and a light shielding film (BS) formed over the first substrate for blocking the light which would enter the semiconductor elements from the display face of the liquid crystal display device if not blocked.

公开(公告)号：US08530898B2

公开(公告)日：2013-09-10

申请号：US12912799

申请日：2010-10-27

申请人： Takeshi Noda ,  Takuo Kaitoh

发明人： Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78627

摘要： A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order.

摘要翻译： 使用其中设置在光源侧的具有栅电极膜的TFT的显示装置也可以抑制寄生电容的增加同时抑制漏光电流的产生。 在TFT的至少一端，在构成源极区域或漏极区域的高浓度区域和沟道区域之间，配置在高浓度区域侧且显示低杂质浓度的第一低浓度区域和第二 按照该顺序设置表现出比第一低浓度区域的杂质浓度更低的杂质浓度的低浓度区域。

公开(公告)号：US08368077B2

公开(公告)日：2013-02-05

申请号：US12578641

申请日：2009-10-14

申请人： Takeshi Kuriyagawa ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Takeshi Kuriyagawa ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  H01L27/1248 ,  H01L29/66765

摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.

摘要翻译： 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。

公开(公告)号：US20100201608A1

公开(公告)日：2010-08-12

申请号：US12700815

申请日：2010-02-05

申请人： Takeshi SAKAI ,  Takuo Kaitoh

发明人： Takeshi SAKAI ,  Takuo Kaitoh

IPC分类号： G09G3/20 ,  H01J9/20

CPC分类号： G02F1/136204 ,  H01L27/0248 ,  H01L27/124

摘要： A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.

摘要翻译： 提供了可以防止由于静电引起的薄膜晶体管的击穿的技术。 一种显示装置的制造方法，在形成构成作为像素的组合的显示区域外的驱动电路的多个薄膜晶体管时，形成与薄膜晶体管的栅电极连接的第一布线， 薄膜晶体管，用于执行驱动信号的产生操作;以及第二布线，其将所述薄膜晶体管的栅极彼此相邻地连接在与所述第一布线相同的层中的所述驱动单元的形成区域中，并且在所述第一布线之后切割所述第二布线 形成连接的薄膜晶体管。