摘要:
A method of quantifying the protection ratio of a hydroxyl group of a polymer compound, comprising calculating the protection ratio of a hydroxyl group of a polymer compound using a multiple regression calibration curve obtained by regression-analyzing main components of near infrared absorption spectra of a plurality of standards samples, from near infrared absorption spectra of samples containing a polymer compound composed of the following first structural unit and second structural unit: first structural unit: a structural unit of a structure having a hydroxyl group, second structural unit: a structural unit of a structure obtained by introducing a protective group into a hydroxyl group in the first structural unit. By this method, the protection ratio of a hydroxyl group of the polymer compound contained in a sample can be quantified with high precision in a short period of time without isolating the polymer compound.
摘要:
A high frequency power amplifier module is provided for improving output controllability. A wireless communication apparatus incorporates a high frequency power amplifier module in a multi-stage configuration including a plurality of cascaded MOSFETS. The power amplifier module comprises a bias circuit for generating a gate voltage in response to a power control voltage (vapc) generated based on a power control signal of the wireless communication apparatus. The gate voltage has a bias pattern which presents smaller fluctuations in output power in response to a control voltage (Vapc) in a region near a threshold voltage (Vth) of the MOSFETs in respective amplification stages. In this way, the controllability for the output power is improved. More specifically, the power amplifier module has a gate bias circuit for generating the gate voltage (Vg) which follows a gate voltage pattern. The gate voltage (Vg) supplied to a control terminal in response to the control voltage (Vapc) largely changes in a region where the gate voltage (Vg) is lower than the threshold voltage (Vth) of the respective MOSFETs, and slightly changes near the threshold voltage (Vth). Also, the gate voltage (Vg) presents desired characteristics from the vicinity of the threshold voltage (Vth) to a high Vapc voltage region.
摘要:
A roofing tile for performing solar-light power generation includes a roofing tile main body set tilted on a roof, and a photovoltaic module fixed to the main body. The roofing tile main body has a recess open upward. The photovoltaic module is stored and fixed in the recess. The roofing tile main body has an eaves-side edge portion. This edge portion has a plurality of drain ditches. Each drain ditch crosses the upper portion of the eaves-side edge portion and communicates with the recess. The level of the bottom surface of each drain ditch is equal to or lower than that of the bottom surface of the recess. With this construction, rainwater that has entered the recess is discharged through the drain ditches. Rainwater is drained by running the rainwater downward on the upper surface side of the eaves-side edge portion along the tilt direction of the roofing tile.
摘要:
A walking-type snow removal machine comprises a snow removing member provided at a front part of a body frame for pushing snow forward, and crawler belts provided on right and left sides of the body frame. The body frame carries thereon an electric motor and a battery. The electric motor drives right and left drive wheels to drive the crawler belts. The electric motor generates little noise as compared with an engine, and contributes to downsizing of the snow removal machine. The battery supplies electrical power to the electric motor.
摘要:
A precursor is made from a plurality of materials having different vapor pressures. The precursor and a source material are placed in a closed heat treatment furnace. The source material is materials which are the same as some of the materials contained in the precursor and having particular vapor pressures. The precursor and source material is thermally treated in the furnace while the source material is being supplied, so the particular materials in the precursor have their evaporation suppressed, thereby forming compounds. The compounds may be oxide superconductors, oxide dielectric, and so on.
摘要:
A 3-�(E)-1-propenyl!cephem compound represented by formula (I): ##STR1## wherein R represents hydrogen, a protective group for an amino group, or the group shown by formula (II): ##STR2## in which R.sup.3 is a protective group for an amino group, R.sup.4 is a protective group for a hydroxyl group, and W is --CH.dbd. or --N.dbd.; R.sup.2 represents a protective group for a carboxyl group; and X represents hydrogen or chlorine. The compound is useful as an intermediate for producing cephem antibiotics and is prepared by isomerizing the corresponding 3-�(Z)-1-propenyl!cephem compound in an inert organic solvent in the presence of an aromatic thiol. The compound of formula (I) wherein X is chlorine can be converted into a 3-�(E)-3-ammonio-1-propenyl!cephem derivative through the reaction with a tertiary amine.
摘要:
A packaged semiconductor device has, according to one embodiment of the present invention, a semiconductor pellet having an electronic circuit therein and electrode pads formed on a principal surface of the pellet, a plurality of electrical connection bumps provided on the electrode pads, a plurality of heat dissipation bumps provided at the principal surface of the pellet and electrically insulated from the electronic circuit and the electrode pads, electrical connection leads for the electronic circuit, heat dissipators for the electronic circuit and a packaging material for sealing pellet, the electrical connection bumps, the heat dissipation bumps and parts of the electrical connection leads and the heat dissipator. One or more of the heat dissipation bumps are arranged relatively nearer to the electronic circuit than the electrical connection bumps for thermal coupling to the electronic circuit. One or more of the electrical connection leads may be engaged with the electrical connection bumps and the heat dissipation bumps and/or one or more of the dissipators may be engaged with the heat dissipation bumps and the electrical connection bumps, thereby serving to effect electrical connection to and heat dissipation for the electronic circuit.