摘要:
A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要:
An oscillator circuit is formed of a differential LC resonant circuit formed of an L load differential circuit including inductance-variable portions and a capacitive element, and a positive feedback circuit formed of N-channel MOS transistors. The inductance-variable portion is configured to vary the inductance by selecting a plurality of switch circuits arranged between a plurality of arbitrary positions on a spiral interconnection layer and the input/output terminal, and thereby can control an oscillation frequency. The inductance-variable portions form an inductor pair when the switch circuit among the switch circuits coupled between the first input/output terminals is turned on together with the switch circuit.
摘要:
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
摘要:
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
摘要:
A ΔΣ modulator modulates only an error component separated by a component separating portion. Therefore, even if the number of order of the ΔΣ modulator increases, an amplitude of an output of an integrator in the final stage does not excessively increase, and the stability of the modulator can be achieved. Since the signal component separated by the component separating portion does not pass through the ΔΣ modulator, an intensity of an input signal can be maintained as it is, and the modulator can have high precision.
摘要:
An A/D converter includes a sample-hold circuit, A/D converting stages connected in series to the sample-hold circuit, and an encoder/latch circuit which adds 3-bit digital signals issued from the A/D converting stages to each other for outputting a signal of 9 bits. The sample-hold circuit and the A/D converting stages each include a differential amplifier. Differential outputs of each differential amplifier are short-circuited for a predetermined initial period in each sampling period.
摘要:
In a pipeline type A/D converter, a sample/hold.cndot.subtracter circuit of an A/D converter block of a first stage samples an analog voltage and outputs an offset voltage at a first phase, and subtracts an output voltage of an A/D converter from the sampled analog voltage in a second phase. An A/D converter of an A/D converter block of a succeeding stage subtracts the output voltage of the sample/hold.cndot.subtracter circuit of the first phase from the output voltage of the sample hold.cndot.subtracter circuit of the second phase, and converts the subtracted result into a digital code. The influence of an offset of a differential amplifier included in the sample/hold.cndot.subtracter circuit is removed so that A/D conversion of high accuracy is allowed.
摘要:
A comparator bank of an A/D converter comprising a plurality of comparators arranged into rows in a folded-back shape and a supply voltage line and a ground line in parallel with each other and connected to the comparators to provide reference potentials thereto according to a distribution shape which rises and falls continuously along the rows of the comparators whereby the linearity of the A/D converter is effectively maintained. The nodes of the comparators do not intersect and are arranged to successively become further from reference points set at the terminals of the supply voltage and ground lines.
摘要:
A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
摘要:
There is provided a technique for reducing the adverse effect of idle tones in the channels in a ΔΣ-type A/D converter including a plurality of channels for converting analog input signals into digital signals. The ΔΣ-type A/D converter includes an L channel for converting a left analog input signal into a digital signal and an R channel for converting a right analog input signal into a digital signal. Each of the L channel and the R channel includes a DC dither circuit for generating a DC addition voltage for shifting the frequency of an idle tone. In the L channel and the R channel, DC addition voltages generated by DC dither circuits are different from each other.