公开(公告)号：US10014400B2

公开(公告)日：2018-07-03

申请号：US15650504

申请日：2017-07-14

Applicant: Infineon Technologies AG

Inventor： Helmut Oefner ,  Nico Caspary ,  Mohammad Momeni ,  Reinhard Ploss ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L29/739 ,  H01L21/02 ,  H01L29/66 ,  H01L21/324 ,  H01L21/268 ,  H01L29/10 ,  H01L21/18 ,  H01L21/322 ,  H01L21/28 ,  H01L21/225

CPC classification number: H01L29/7393 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/0201 ,  H01L21/02016 ,  H01L21/187 ,  H01L21/2257 ,  H01L21/268 ,  H01L21/28238 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/76256 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one semiconductor component integrated in the semiconductor substrate; a first metallization at the first side of the semiconductor substrate; and a second metallization at the second side of the semiconductor substrate. The semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side. The global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.

公开(公告)号：US20180102423A1

公开(公告)日：2018-04-12

申请号：US15831247

申请日：2017-12-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Moriz Jelinek ,  Johannes Laven ,  Helmut Oefner ,  Werner Schustereder

IPC: H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/66 ,  H01L21/263 ,  H01L21/324

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.

公开(公告)号：US09754787B2

公开(公告)日：2017-09-05

申请号：US14313366

申请日：2014-06-24

Applicant: Infineon Technologies AG

Inventor： Johannes Laven ,  Hans-Joachim Schulze ,  Stephan Voss ,  Alexander Breymesser ,  Alexander Susiti ,  Shuhai Liu ,  Helmut Oefner

IPC: H01L21/425 ,  H01L21/263 ,  H01L21/265 ,  H01L21/324 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861 ,  H01L29/872 ,  H01L29/739 ,  H01L29/16 ,  H01L29/22

CPC classification number: H01L21/263 ,  H01L21/26506 ,  H01L21/3242 ,  H01L29/1608 ,  H01L29/2203 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.

公开(公告)号：US20150371858A1

公开(公告)日：2015-12-24

申请号：US14313366

申请日：2014-06-24

Applicant: Infineon Technologies AG

Inventor： Johannes Laven ,  Hans-Joachim Schulze ,  Stephan Voss ,  Alexander Breymesser ,  Alexander Susiti ,  Shuhai Liu ,  Helmut Oefner

IPC: H01L21/265 ,  H01L21/324

CPC classification number: H01L21/263 ,  H01L21/26506 ,  H01L21/3242 ,  H01L29/1608 ,  H01L29/2203 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.

Abstract translation: 通过经由第二侧将第一粒子注入到半导体晶片中，在半导体晶片中形成晶体缺陷来处理具有沿第一垂直方向彼此远离布置的相对的第一和第二侧的磁性切克斯第斯基半导体晶片。 晶体缺陷在第一深度具有最大缺陷浓度。 在第一热处理中加热半导体晶片以形成辐射诱导的供体。 选择植入能量和剂量使得半导体晶片在第一热处理之后具有布置在第二侧和第一深度之间的n掺杂半导体区域，并且n掺杂半导体区域在第一垂直方向上具有 第一深度和第二侧之间的净掺杂浓度的局部最大值以及第一深度和第一最大值之间的净掺杂浓度的局部最小值。