TRAPPING AT LEAST ONE MICROPARTICLE
    44.
    发明申请
    TRAPPING AT LEAST ONE MICROPARTICLE 审中-公开
    抓住最小的一个麦克风

    公开(公告)号:US20170007996A1

    公开(公告)日:2017-01-12

    申请号:US14797170

    申请日:2015-07-12

    Abstract: A device for trapping at least one microparticle in a fluid flow is suggested. The device comprises a trapping element and an electrode. The trapping element is configured for trapping the at least one microparticle and has at least one recess for receiving the at least one microparticle. The electrode is configured for generating an asymmetric electric field. In operation, at least one microparticle of a plurality of microparticles passing through the asymmetric electric field is forced into the at least one recess of the trapping element.

    Abstract translation: 提出了一种用于在流体流中捕获至少一个微粒的装置。 该装置包括捕获元件和电极。 捕获元件构造成用于捕获至少一个微粒并且具有用于接收至少一个微粒的至少一个凹部。 电极被配置用于产生不对称电场。 在操作中,通过非对称电场的多个微粒中的至少一个微粒被强制进入捕获元件的至少一个凹部。

    Mask that provides improved focus control using orthogonal edges
    46.
    发明授权
    Mask that provides improved focus control using orthogonal edges 有权
    使用正交边缘提供改进的对焦控制的掩模

    公开(公告)号:US09310674B2

    公开(公告)日:2016-04-12

    申请号:US14185440

    申请日:2014-02-20

    CPC classification number: G03F1/76

    Abstract: A method includes selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography. First locations are identified in the desired pattern, the first locations being those which would produce on the wafer images impacted by phase distortions of actinic light through openings in the desired pattern. Second locations in the desired pattern are identified for the insertion of orthoedges. The orthoedges are provided to contribute an additional amplitude of actinic light to the images impacted by phase distortions when the actinic light is projected onto the wafer. The orthoedges are then inserted into the desired pattern at the second locations at orientations such that the orthoedges provide a quadrature component to the additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing the phase distortions. Finally, the mask blank is formed lithographically with the desired pattern modified through the insertion of the orthoedges.

    Abstract translation: 一种方法包括选择掩模坯料,用于通过投影光刻在光刻形成要印刷到晶片上的主要特征的期望图案。 以期望的图案识别第一位置,第一位置是在晶片上产生的图像的位置,该图像受到通过所需图案的开口的光化光的相位变形的影响。 识别所需图案中的第二位置用于插入骨架。 被提供的焦距用于在将光化光投射到晶片上时,对由相位失真影响的图像贡献额外的光化幅度幅度。 然后,在第二位置处将取向插入到期望的图案中,使得所述重心与所述光化学光的正交分量具有相反符号的附加振幅提供正交分量,以产生相位变形。 最后,掩模坯料通过插入重心被修改的所需图案光刻地形成。

    MASK THAT PROVIDES IMPROVED FOCUS CONTROL USING ORTHOGONAL EDGES
    47.
    发明申请
    MASK THAT PROVIDES IMPROVED FOCUS CONTROL USING ORTHOGONAL EDGES 有权
    使用正交边缘提供改进的焦点控制

    公开(公告)号:US20150234269A1

    公开(公告)日:2015-08-20

    申请号:US14185440

    申请日:2014-02-20

    CPC classification number: G03F1/76

    Abstract: A method includes selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography. First locations are identified in the desired pattern, the first locations being those which would produce on the wafer images impacted by phase distortions of actinic light through openings in the desired pattern. Second locations in the desired pattern are identified for the insertion of orthoedges. The orthoedges are provided to contribute an additional amplitude of actinic light to the images impacted by phase distortions when the actinic light is projected onto the wafer. The orthoedges are then inserted into the desired pattern at the second locations at orientations such that the orthoedges provide a quadrature component to the additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing the phase distortions. Finally, the mask blank is formed lithographically with the desired pattern modified through the insertion of the orthoedges.

    Abstract translation: 一种方法包括选择掩模坯料,用于通过投影光刻在光刻形成要印刷到晶片上的主要特征的期望图案。 以期望的图案识别第一位置,第一位置是在晶片上产生的图像的位置,该图像受到通过所需图案的开口的光化光的相位变形的影响。 识别所需图案中的第二位置用于插入骨架。 被提供的焦距用于在将光化光投射到晶片上时,对由相位失真影响的图像贡献额外的光化幅度幅度。 然后,在第二位置处将取向插入到期望的图案中,使得所述重心与所述光化学光的正交分量具有相反符号的附加振幅提供正交分量,以产生相位变形。 最后,掩模坯料通过插入重心被修改的所需图案光刻地形成。

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