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    MOBILE CELLULAR SPECTROSCOPY
    41.
    发明申请
    MOBILE CELLULAR SPECTROSCOPY 有权
    移动细胞光谱

    公开(公告)号：US20160231171A1

    公开(公告)日：2016-08-11

    申请号：US14614575

    申请日：2015-02-05

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Sergio A. Bermudez Rodriguez ,  Levente Klein ,  Theodore G. van Kessel

    IPC: G01J3/02 ,  G01J3/28 ,  G01J3/18

    CPC classification number: G01J3/2823 ,  G01J3/0264 ,  G01J3/0272 ,  G01J3/0291 ,  G01J3/10 ,  G01J3/18

    Abstract: The present invention discloses a spectrometer apparatus comprising a mobile device including an integrated camera, having a camera lens and an image sensor. The camera lens is located within a body of the mobile device that comprises a detachable housing coupled to the body of the mobile device. The detachable housing includes a first end and a second end opposed to the first end. The first end includes an optical input and the second end includes an opening that is substantially aligned with the camera lens. An optical spectrometer device is located within the housing and optically coupled to both the optical input at the first end of the housing and the camera lens at the second end of the housing. The optical spectrometer device receives a target image from the optical input and generates a spectral image that is received by the image sensor via the camera lens.

    Abstract translation: 本发明公开了一种光谱仪装置，包括具有相机镜头和图像传感器的集成照相机的移动装置。 摄像机镜头位于移动设备的主体内，其包括联接到移动设备的主体的可拆卸外壳。 可拆卸外壳包括与第一端相对的第一端和第二端。 第一端包括光学输入端，第二端部包括基本上与相机透镜对准的开口。 光学仪器装置位于壳体内，并且在壳体的第一端处的光学输入端和光学耦合到壳体的第二端处的相机透镜。 光谱仪装置从光学输入接收目标图像，并生成由图像传感器经由照相机镜头接收的光谱图像。

    Germanium photodetector
    43.
    发明授权
    Germanium photodetector 有权

    公开(公告)号：US08841162B2

    公开(公告)日：2014-09-23

    申请号：US14104563

    申请日：2013-12-12

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    IPC: H01L21/00 ,  H01L31/108 ,  H01L31/18

    CPC classification number: H01L31/1808 ,  H01L31/1085 ,  Y02E10/50

    Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

    PHOTONICS DEVICE AND CMOS DEVICE HAVING A COMMON GATE
    45.
    发明申请
    PHOTONICS DEVICE AND CMOS DEVICE HAVING A COMMON GATE 有权
    光电设备和具有普通门的CMOS器件

    公开(公告)号：US20140191302A1

    公开(公告)日：2014-07-10

    申请号：US13736672

    申请日：2013-01-08

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Solomon Assefa ,  William M.J. Green ,  Steven M. Shank ,  Yurii A. Vlasov

    IPC: H01L31/18 ,  H01L27/14

    CPC classification number: H01L27/0922 ,  H01L21/28255 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/0617 ,  H01L27/14 ,  H01L31/18 ,  H01L31/1808 ,  Y02E10/50

    Abstract: A semiconductor chip having a photonics device and a CMOS device which includes a photonics device portion and a CMOS device portion on a semiconductor chip; a metal or polysilicon gate on the CMOS device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics device portion; a germanium gate on the photonics device portion such that the germanium gate is coplanar with the metal or polysilicon gate, the germanium gate having a gate extension that extends toward the CMOS device portion, the germanium gate extension and metal or polysilicon gate extension joined together to form a common gate; spacers formed on the germanium gate and the metal or polysilicon gate; and nitride encapsulation formed on the germanium gate. A method is also disclosed pertaining to fabricating the semiconductor chip.

    Abstract translation: 一种具有光子器件和CMOS器件的半导体芯片，其包括半导体芯片上的光子器件部分和CMOS器件部分; 在CMOS器件部分上的金属或多晶硅栅极，金属或多晶硅栅极具有朝向光子器件部分延伸的栅极延伸; 在光子器件部分上的锗栅极，使得锗栅极与金属或多晶硅栅极共面，锗栅极具有朝向CMOS器件部分延伸的栅极延伸，锗栅极延伸和金属或多晶硅栅极延伸部连接到一起 形成共同门; 在锗栅极和金属或多晶硅栅极上形成的间隔物; 并且在锗栅上形成氮化物封装。 还公开了一种制造半导体芯片的方法。

    FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX LATERAL EPITAXIAL REALIGNMENT OF DEPOSITED NON-CRYSTALLINE FILM ON BULK SEMICONDUCTOR SUBSTRATES FOR PHOTONICS DEVICE INTEGRATION
    46.
    发明申请
    FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX LATERAL EPITAXIAL REALIGNMENT OF DEPOSITED NON-CRYSTALLINE FILM ON BULK SEMICONDUCTOR SUBSTRATES FOR PHOTONICS DEVICE INTEGRATION 有权
    本地化SOI的局部化制造对于光电子器件集成的大片半导体衬底上沉积的非晶体膜的侧向外延生长

    公开(公告)号：US20140127877A1

    公开(公告)日：2014-05-08

    申请号：US13667389

    申请日：2012-11-02

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Solomon Assefa ,  William M. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

    IPC: H01L21/762 ,  H01L21/76

    CPC classification number: H01L21/76205 ,  H01L21/0274 ,  H01L21/76232 ,  H01L21/76281 ,  H01L21/76283

    Abstract: Photonic SOI devices are formed by lateral epitaxy of a deposited non-crystalline semiconductor layer over a localized buried oxide created by a trench isolation process or by thermal oxidation. Specifically, and after forming a trench into a semiconductor substrate, the trench can be filled with an oxide by a deposition process or a thermal oxidation can be performed to form a localized buried oxide within the semiconductor substrate. In some embodiments, the oxide can be recessed to expose sidewall surfaces of the semiconductor substrate. Next, a non-crystalline semiconductor layer is formed and then a solid state crystallization is preformed which forms a localized semiconductor-on-insulator layer. During the solid state crystallization process portions of the non-crystalline semiconductor layer that are adjacent exposed sidewall surfaces of the substrate are crystallized.

    Abstract translation: 通过在通过沟槽隔离工艺或通过热氧化产生的局部掩埋氧化物上沉积的非晶体半导体层的横向外延形成光子学SOI器件。 具体地说，并且在将半导体衬底形成沟槽之后，可以通过沉积工艺填充沟槽，或者可以进行热氧化以在半导体衬底内形成局部掩埋氧化物。 在一些实施例中，氧化物可以凹入以暴露半导体衬底的侧壁表面。 接下来，形成非晶半导体层，然后进行形成局部绝缘体上半导体层的固态结晶。 在固态结晶处理期间，非晶半导体层的与衬底的暴露的侧壁表面相邻的部分结晶。

    FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACTURING PROCESS
    47.
    发明申请
    FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACTURING PROCESS 有权
    制造光电器件完全集成到CMOS制造工艺

    公开(公告)号：US20140080269A1

    公开(公告)日：2014-03-20

    申请号：US14085752

    申请日：2013-11-20

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  William M.J. Green ,  Yurii A. Vlasov ,  Min Yang

    IPC: H01L21/8238

    CPC classification number: H01L21/8238 ,  G02B6/136 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/76283 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/105

    Abstract: Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.

    Abstract translation: 公开了将光子器件的处理完全集成到CMOS制造工艺流程中的过程增强。 CMOS晶片可以被分成不同的部分。 其中一个部分用于CMOS器件，一个或多个其它部分用于光子器件。 光子器件包括脊状波导和锗光电检测器。 锗光电探测器可以利用来自熔融法的接种结晶，因此在锗光电探测器的处理中具有更大的灵活性。

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