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137 条记录 (耗时 0.031 秒)

    Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
    41.
    发明授权
    Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device 失效
    多位非易失性存储器件，其操作方法以及制造多位非易失性存储器件的方法

    公开(公告)号：US07256447B2

    公开(公告)日：2007-08-14

    申请号：US11181724

    申请日：2005-07-15

    申请人： Yoon-dong Park ,  Sun-ae Seo ,  Choong-rae Cho ,  Won-joo Kim ,  Sang-min Shin

    发明人： Yoon-dong Park ,  Sun-ae Seo ,  Choong-rae Cho ,  Won-joo Kim ,  Sang-min Shin

    IPC分类号： H01L29/788

    CPC分类号： H01L29/7926 ,  H01L29/42332 ,  H01L29/7887 ,  H01L29/7923

    摘要： Disclosed are a muli-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the muli-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.

    摘要翻译： 公开了多位非易失性存储器件，其操作方法以及制造多位非易失性存储器件的方法。 多晶硅非易失性存储器件的单元可以形成在半导体衬底上，可以包括：垂直于半导体衬底的上表面设置的多个沟道; 多个存储节点，其设置在所述通道的相对侧，垂直于所述半导体衬底的上表面; 围绕通道和存储节点的上部以及存储节点的侧表面的控制门; 以及形成在通道和存储节点之间，通道和控制栅极之间以及存储节点和控制门之间的绝缘膜。

    Method of manufacturing memory with nano dots
    42.
    发明授权
    Method of manufacturing memory with nano dots 有权
    用纳米点制造记忆的方法

    公开(公告)号：US06913984B2

    公开(公告)日：2005-07-05

    申请号：US10743377

    申请日：2003-12-23

    申请人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

    发明人： In-sook Kim ,  Sun-ae Seo ,  In-kyeong Yoo ,  Soo-hwan Jeong

    IPC分类号： B82B1/00 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/76

    CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792 ,  Y10S977/723 ,  Y10S977/774

    摘要： A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.

    摘要翻译： 利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔 通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层 作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以 用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。