公开(公告)号：US10892168B2

公开(公告)日：2021-01-12

申请号：US16222592

申请日：2018-12-17

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Mario Barusic ,  Benedikt Stoib

IPC: H01L21/322 ,  H01L27/06 ,  H01L29/32 ,  H01L29/739 ,  H01L29/66 ,  H01L29/861 ,  H01L29/167 ,  H01L29/207 ,  H01L29/36 ,  H01L21/265 ,  H01L49/02

Abstract: A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.

公开(公告)号：US20200083133A1

公开(公告)日：2020-03-12

申请号：US16556642

申请日：2019-08-30

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Oliver Humbel ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L29/06 ,  H01L21/02 ,  C23C16/34

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

公开(公告)号：US20190333765A1

公开(公告)日：2019-10-31

申请号：US16395772

申请日：2019-04-26

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Oliver Humbel ,  Ravi Keshav Joshi ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Bernhard Leitl ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC: H01L21/02 ,  H01L29/66

Abstract: A method for manufacturing a high-voltage semiconductor device includes exposing a semiconductor substrate to a plasma to form a protective substance layer on the semiconductor substrate. A semiconductor device includes a semiconductor substrate and a protective substance layer on the semiconductor substrate.

公开(公告)号：US09601376B2

公开(公告)日：2017-03-21

申请号：US14960505

申请日：2015-12-07

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Andre Brockmeier ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Carsten von Koblinski ,  Gerhard Schmidt

IPC: H01L29/66 ,  H01L21/78 ,  H01L23/31 ,  H01L21/20 ,  H01L23/00 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L21/56 ,  H01L21/762

CPC classification number: H01L21/78 ,  H01L21/2007 ,  H01L21/56 ,  H01L21/76224 ,  H01L23/3178 ,  H01L23/564 ,  H01L29/7393 ,  H01L29/78 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion.

公开(公告)号：US20150380492A1

公开(公告)日：2015-12-31

申请号：US14318921

申请日：2014-06-30

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt

IPC: H01L29/167 ,  H01L21/225 ,  H01L21/324 ,  H01L21/265 ,  H01L29/10

CPC classification number: H01L29/167 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/8611

Abstract: A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The semiconductor body contains chalcogen atoms and a background doping of pnictogen and/or hydrogen atoms. A concentration of the chalcogen atoms is at least 1E12 cm−3. A ratio of the chalcogen atoms to the atoms of the background doping is in a range from 1:9 to 9:1.

Abstract translation: 半导体器件包括具有平行于第一表面的第一表面和第二表面的单晶半导体本体。 半导体主体含有硫属原子和底色和/或氢原子的背景掺杂。 硫属原子的浓度为至少1E12cm-3。 硫属原子与背景掺杂原子的比例在1:9至9:1的范围内。

公开(公告)号：US09159783B2

公开(公告)日：2015-10-13

申请号：US13709786

申请日：2012-12-10

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Hans-Joachim Schulze ,  Bernd Kolbesen

IPC: H01L29/06 ,  H01L21/223 ,  H01L21/225 ,  H01L21/265 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167

CPC classification number: H01L29/0607 ,  H01L21/223 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1016 ,  H01L29/167 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/66363 ,  H01L29/66712 ,  H01L29/66909 ,  H01L29/7397 ,  H01L29/7802

Abstract: A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.

Abstract translation: 半导体衬底包括与第一侧相对的第一侧和第二侧。 半导体材料在第一和第二侧之间延伸并且没有有源器件区域。 半导体材料具有第一区域和第二区域。 第一区域从第一侧向深度延伸到半导体材料中，并且包括提供第一区域的基极掺杂浓度的硫族化合物掺杂剂原子。 第二区域从第一区域延伸到第二侧并且没有基底掺杂。 此外，提供功率半导体部件。

公开(公告)号：US20150200247A1

公开(公告)日：2015-07-16

申请号：US14153377

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/324 ,  H01L29/739 ,  H01L21/266 ,  H01L27/07 ,  H01L29/10

CPC classification number: H01L21/324 ,  H01L21/26513 ,  H01L27/0727 ,  H01L27/0761 ,  H01L29/0834 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861

Abstract: A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors. At least 90% of the electrically active chalcogen impurities form isolated defects in the semiconductor material.

Abstract translation: 功率半导体器件具有半导体本体，其具有基本上平行于第一表面延伸的第一表面和第二表面。 第一金属化被布置在第一表面上。 第二金属化被布置在第二表面上。 半导体本体包括与第一金属化间隔开并具有第一最大掺杂浓度的n掺杂的第一半导体区域，具有高于第一最大掺杂浓度的第二最大掺杂浓度的n掺杂的第二半导体区域并邻接第一半导体 以及与所述第二金属化欧姆接触的第三半导体区域，被布置在所述第二金属化层和所述第二半导体区域之间并邻接所述第二半导体区域。 第二半导体区域由包含作为供体的电活性硫属元素杂质的半导体材料制成。 至少90％的电活性硫族元素杂质在半导体材料中形成孤立的缺陷。

公开(公告)号：US20140167143A1

公开(公告)日：2014-06-19

申请号：US13713867

申请日：2012-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Gerhard Schmidt

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/765 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/861

Abstract: A semiconductor body has a first side, second side, lateral edge, active area, edge termination between the active area and the lateral edge, and drift region of a first conductivity type. The edge termination includes a step formed in the semiconductor body between the first side and the lateral edge. The step includes a lateral surface extending up to the first side and a bottom surface extending up to the lateral edge. A first doping zone of a second conductivity type is formed in the semiconductor body along the lateral surface of the step and forms a pn-junction with the drift region. A second doping zone of the first conductivity type is formed in the semiconductor body at least along a part of the bottom surface of the step and extends up to the lateral edge, wherein the second doping zone is in contact with the drift region.

Abstract translation: 半导体本体具有第一导电类型的第一侧面，第二侧面，横向边缘，有源区域，有源区域和侧边缘之间的边缘终端以及漂移区域。 边缘终端包括在第一侧面和侧边缘之间形成在半导体本体中的台阶。 该步骤包括一直到第一侧延伸的侧表面和一个延伸到侧边缘的底面。 第二导电类型的第一掺杂区沿着台阶的侧表面形成在半导体本体中，并与漂移区形成pn结。 第一导电类型的第二掺杂区至少沿台阶的底表面的一部分形成在半导体本体中，并且延伸到侧边缘，其中第二掺杂区与漂移区接触。