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218 条记录 (耗时 0.031 秒)

    Electropolishing system and process
    44.
    发明授权
    Electropolishing system and process 有权
    电抛光系统和工艺

    公开(公告)号：US07578923B2

    公开(公告)日：2009-08-25

    申请号：US10391924

    申请日：2003-03-18

    申请人： Bulent M. Basol ,  Homayoun Talieh

    发明人： Bulent M. Basol ,  Homayoun Talieh

    IPC分类号： C25F3/02 ,  B23H5/06

    CPC分类号： B24B37/20 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  C25F3/02 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/67075 ,  H01L21/6715

    摘要： The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.

    摘要翻译： 本发明提供一种电抛光半导体晶片的导电表面的方法。 在该过程中，接触溶液中的接触电极与接触溶液接触导电层表面上的接触区域。 此外，在该过程中，处理溶液中的处理电极与处理溶液接触导电表面上的工艺区域，同时在接触电极和处理电极之间施加电位，以电镀抛光工艺区域的导电层的表面。

    Method of making rolling electrical contact to wafer front surface
    45.
    发明授权
    Method of making rolling electrical contact to wafer front surface 失效
    制造与晶片正面滚动电接触的方法

    公开(公告)号：US07491308B2

    公开(公告)日：2009-02-17

    申请号：US11123268

    申请日：2005-05-05

    申请人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

    发明人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

    IPC分类号： C25D5/00 ,  C25B9/00

    CPC分类号： B23H3/04 ,  B23H5/08 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

    摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

    摘要翻译： 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

    Electrochemical mechanical processing apparatus
    46.
    发明授权
    Electrochemical mechanical processing apparatus 有权
    电化学机械加工设备

    公开(公告)号：US07425250B2

    公开(公告)日：2008-09-16

    申请号：US10830894

    申请日：2004-04-23

    申请人： Bulent M. Basol ,  Homayoun Talieh

    发明人： Bulent M. Basol ,  Homayoun Talieh

    IPC分类号： C25F7/00 ,  C25F3/30 ,  C25D17/00 ,  B23H3/00

    CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B21/04 ,  B24B21/22 ,  B24B37/04 ,  B24B37/205 ,  B24B47/04 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/76877

    摘要： A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between conductive surface and an electrode and establishing relative motion between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.

    摘要翻译： 提供了一种用于晶片的导电表面的电化学机械抛光的系统。 该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。 施加导电表面和电极之间的电位差并且在皮带垫和导电表面之间建立相对运动导致从导电表面去除材料。 通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

    Device providing electrical contact to the surface of a semiconductor workpiece during processing
    47.
    发明授权
    Device providing electrical contact to the surface of a semiconductor workpiece during processing 有权
    在处理过程中提供与半导体工件的表面的电接触的装置

    公开(公告)号：US07311811B2

    公开(公告)日：2007-12-25

    申请号：US10826219

    申请日：2004-04-16

    申请人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

    发明人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

    IPC分类号： C25F3/02

    CPC分类号： B23H3/04 ,  B23H5/08 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

    摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

    摘要翻译： 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

    Fabrication of semiconductor interconnect structures
    49.
    发明授权
    Fabrication of semiconductor interconnect structures 有权
    半导体互连结构的制造

    公开(公告)号：US07172497B2

    公开(公告)日：2007-02-06

    申请号：US10264726

    申请日：2002-10-03

    申请人： Bulent M. Basol ,  Homayoun Talieh

    发明人： Bulent M. Basol ,  Homayoun Talieh

    IPC分类号： B24B1/00 ,  B24B7/22

    CPC分类号： C25D5/06 ,  B24B37/042 ,  B24B37/046 ,  B24B49/16 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/7684

    摘要： A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.

    摘要翻译： 提供了一种在晶片表面形成铜互连结构的系统和方法。 该方法包括在电化学机械沉积站中进行平面电镀处理以将铜材料填充到形成在晶片表面中的多个空腔中的步骤。 电镀继续进行，直到在晶片的表面上形成具有预定厚度的平坦的铜层。 在随后的化学机械抛光步骤中，去除平面层，直到铜保留在空腔中，通过介电层的暴露区域彼此绝缘。

    Method and apparatus for avoiding particle accumulation in electrodeposition
    50.
    发明授权
    Method and apparatus for avoiding particle accumulation in electrodeposition 有权
    用于避免电沉积中的颗粒积聚的方法和装置

    公开(公告)号：US06932896B2

    公开(公告)日：2005-08-23

    申请号：US09982558

    申请日：2001-10-17

    申请人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

    发明人： Bulent M. Basol ,  Cyprian Uzoh ,  Homayoun Talieh

    IPC分类号： B08B1/04 ,  B24B37/04 ,  B24B53/00 ,  B24B53/007 ,  C25D5/22 ,  C25D7/12 ,  C25F3/16 ,  H01L21/288 ,  H01L21/304 ,  H01L21/768

    CPC分类号： B24B53/017 ,  B24B37/04 ,  B24B53/001 ,  C25D5/22 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

    摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.

    摘要翻译： 提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。 根据示例性的方法，工件表面影响装置偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压被反转。 根据另一示例性方法，使用诸如刷子的机械接触构件对工件表面影响装置进行调节，并且例如通过用刷子物理刷刷工件表面影响装置来发生工件表面影响装置的调节。 根据另一示例性方法，在电沉积期间，工件表面影响装置在不同方向上旋转。