Endpoint detection for non-transparent polishing member
    3.
    发明授权
    Endpoint detection for non-transparent polishing member 失效
    非透明抛光件的端点检测

    公开(公告)号:US06942546B2

    公开(公告)日:2005-09-13

    申请号:US10321150

    申请日:2002-12-17

    摘要: A sensing apparatus for detecting a processing endpoint of a multi-layer semiconductor wafer includes a light source to emit light against a surface of the semiconductor wafer, a color sensor to sense a reflection color from the surface of the semiconductor wafer in response to the incident light and to generate a sensor signal, and a decision circuit coupled to the color sensor and configured to decide whether the wafer processing endpoint has been reached based at least in part on the sensor signal. In another embodiment, a sensing apparatus is coupled to a movable structure to position the sensing apparatus to sense the surface of the semiconductor wafer.

    摘要翻译: 用于检测多层半导体晶片的处理端点的感测装置包括:用于向半导体晶片的表面发射光的光源;响应于事件从半导体晶片的表面感测反射颜色的颜色传感器 并且产生传感器信号,以及决定电路,其耦合到所述颜色传感器并且被配置为至少部分地基于所述传感器信号来确定是否已经达到所述晶片处理端点。 在另一个实施例中,感测装置耦合到可移动结构以定位感测装置以感测半导体晶片的表面。

    Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery
    6.
    发明授权
    Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery 有权
    化学机械抛光的抛光和缺陷控制使用实时可调添加剂递送

    公开(公告)号:US08210900B2

    公开(公告)日:2012-07-03

    申请号:US12263237

    申请日:2008-10-31

    IPC分类号: B24B49/00

    CPC分类号: B24B37/04 B24B57/02

    摘要: A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

    摘要翻译: 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中,提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上,将抛光浆料输送到抛光垫组件的表面,用抛光垫组件的表面抛光衬底,监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光,并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

    Method and apparatus for enhanced CMP using metals having reductive properties

    公开(公告)号:US06537144B1

    公开(公告)日:2003-03-25

    申请号:US09505899

    申请日:2000-02-17

    IPC分类号: B24D1100

    摘要: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.