Method and Apparatus for Multiple Agent Commitment Tracking and Notification
    41.
    发明申请
    Method and Apparatus for Multiple Agent Commitment Tracking and Notification 审中-公开
    多代理承诺跟踪和通知的方法和装置

    公开(公告)号:US20060248043A1

    公开(公告)日:2006-11-02

    申请号:US11456333

    申请日:2006-07-10

    申请人: James Powers

    发明人: James Powers

    IPC分类号: G06F17/30

    摘要: A system for tracking client contacts for a host organization utilizes a multimedia database and a user interface at a connected computer device. The database stores client communications as full content, and relates contacts by issue, and the user interface displays client contact communications as objects, such as icons, in issue related chronological strings. In a preferred embodiment the interface also provides an input facility for a host agent to select appropriate responses to client communications, to make commitments for response, to assign responsibility for commitments, and to notify personnel effected by entered commitments in various ways, such as reminders. Other notifications include fulfilled and unfulfilled commitments.

    摘要翻译: 用于跟踪主机组织的客户端联系人的系统在连接的计算机设备上使用多媒体数据库和用户界面。 数据库将客户端通信作为完整内容存储,并且通过问题将联系人相关联,并且用户界面将客户端联系人通信作为诸如图标的对象显示在有问题的相关时间字符串中。 在优选实施例中,接口还为主机代理提供输入设备,以便为客户通信选择适当的响应,作出响应承诺,分配承诺责任,并以各种方式通知所输入承诺的人员,例如提醒 。 其他通知包括履行和未履行的承诺。

    Semiconductor device formed with an air gap using etch back of inter layer dielectric (ILD)
    42.
    发明授权
    Semiconductor device formed with an air gap using etch back of inter layer dielectric (ILD) 失效
    使用层间电介质(ILD)的后蚀刻形成有气隙的半导体器件

    公开(公告)号:US07126223B2

    公开(公告)日:2006-10-24

    申请号:US10261426

    申请日:2002-09-30

    IPC分类号: H01L23/52

    摘要: A method is disclosed of forming an air gap using etch back of an inter layer dielectric (ILD) with self-alignment to metal pattern. The method entails forming a first metallization layer deposited on a first dielectric, forming a second metallization layer deposited on a second dielectric, wherein the second metallization layer is spaced apart from the first metallization layer, forming a sacrificial ILD between the first and second metallization layers, forming a diffusion layer over the first and second metallization layers and over the sacrificial ILD, and removing the sacrificial ILD to form an air gap between the first and second metallization layers. This method is particular applicable for dual copper damascene processes.

    摘要翻译: 公开了一种使用具有自对准金属图案的层间电介质(ILD)的回蚀形成气隙的方法。 该方法需要形成沉积在第一电介质上的第一金属化层,形成沉积在第二电介质上的第二金属化层,其中第二金属化层与第一金属化层间隔开,在第一和第二金属化层之间形成牺牲ILD 在所述第一和第二金属化层上并在所述牺牲ILD上形成扩散层,以及去除所述牺牲ILD以在所述第一和第二金属化层之间形成气隙。 该方法特别适用于双铜镶嵌工艺。

    Methods and system for creating and managing identity oriented networked communication
    44.
    发明申请
    Methods and system for creating and managing identity oriented networked communication 有权
    用于创建和管理面向身份的网络通信的方法和系统

    公开(公告)号:US20050198125A1

    公开(公告)日:2005-09-08

    申请号:US10765338

    申请日:2004-01-26

    IPC分类号: G06F15/16 G06F15/173

    摘要: A software application for managing routing of communiqués across one or more communication channels supported by a data-packet-network includes one or more workspaces for segregating communication activity; one or more unique user identities assigned per workspace; and one or more contact identities assigned to and approved to communicate with a workspace administrator of the one or more workspaces using the assigned user identities. In a preferred embodiment the application enforces a policy implicitly defined by the existing architecture of the workspaces and associated user and contact identities.

    摘要翻译: 用于管理通过数据分组网络支持的一个或多个通信信道的公告路由的软件应用包括用于隔离通信活动的一个或多个工作空间; 每个工作区分配一个或多个唯一身份用户身份; 以及使用分配的用户身份分配给并被批准与一个或多个工作空间的工作空间管理员通信的一个或多个联系人身份。 在优选实施例中,应用实施由工作空间和相关联的用户和联系人身份的现有架构隐含地定义的策略。

    Method and apparatus for electroplating a semiconductor wafer
    45.
    发明申请
    Method and apparatus for electroplating a semiconductor wafer 审中-公开
    用于电镀半导体晶片的方法和装置

    公开(公告)号:US20050189229A1

    公开(公告)日:2005-09-01

    申请号:US11114312

    申请日:2005-04-25

    申请人: James Powers

    发明人: James Powers

    摘要: A method, apparatus and anode for plating copper or other metals onto a barrier or seed layer of a wafer surface is described. A copper layer of uniform thickness is plated on the surface by, for instance, maintaining a constant current density between the anode and wafer surface. Several configurations of anodes are described for obtaining the constant current density.

    摘要翻译: 描述了将铜或其它金属镀在晶片表面的阻挡层或晶种层上的方法,装置和阳极。 通过例如在阳极和晶片表面之间保持恒定的电流密度,在表面上镀覆均匀厚度的铜层。 描述了几种阳极配置以获得恒定电流密度。

    Systems for priming fluid jetting devices
    50.
    发明授权
    Systems for priming fluid jetting devices 有权
    起动流体喷射装置的系统

    公开(公告)号:US08414114B2

    公开(公告)日:2013-04-09

    申请号:US12948878

    申请日:2010-11-18

    IPC分类号: B41J2/175 B41J2/18 B41J2/165

    摘要: Disclosed is a system for priming a fluid jetting device. The system includes a fluid trench configured within a fluid jetting chip of the fluid jetting device and at least one first channel fluidly coupled to the fluid trench. The at least one first channel extends vertically between the fluid jetting chip and a mounting unit adapted to support the fluid jetting chip, and is adapted to supply a priming fluid to the fluid trench. The system further includes at least one second channel fluidly coupled to the fluid trench. The at least one second channel extends vertically between the fluid jetting chip and the mounting unit, and is adapted to drain-out the priming fluid from the fluid trench. Further disclosed are systems for priming a fluid jetting device, in accordance with various embodiments of the present disclosure.

    摘要翻译: 公开了一种用于启动流体喷射装置的系统。 该系统包括配置在流体喷射装置的流体喷射芯片内的流体沟槽和流体耦合到流体沟槽的至少一个第一通道。 所述至少一个第一通道在流体喷射芯片和适于支撑流体喷射芯片的安装单元之间垂直延伸,并且适于将启动流体供应到流体沟槽。 该系统还包括至少一个流体地联接到流体沟槽的第二通道。 所述至少一个第二通道在所述流体喷射芯片和所述安装单元之间垂直延伸,并且适于从所述流体沟槽排出所述起动流体。 还公开了根据本公开的各种实施例的用于起动流体喷射装置的系统。