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    Field effect transistor, logic circuit including the same and methods of manufacturing the same
    41.
    发明授权
    Field effect transistor, logic circuit including the same and methods of manufacturing the same 有权
    场效应晶体管，逻辑电路包括相同的方法和制造方法相同

    公开(公告)号：US08274098B2

    公开(公告)日：2012-09-25

    申请号：US12005372

    申请日：2007-12-27

    申请人： Hyun-jong Chung ,  Ran-ju Jung ,  Sun-ae Seo ,  Dong-chul Kim ,  Chang-won Lee

    发明人： Hyun-jong Chung ,  Ran-ju Jung ,  Sun-ae Seo ,  Dong-chul Kim ,  Chang-won Lee

    IPC分类号： H01L29/66

    CPC分类号： H01L29/18 ,  H01L21/823807 ,  H01L27/11807 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/2203 ,  H01L29/7606 ,  H01L29/7781 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869

    摘要： Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

    摘要翻译： 提供一种场效应晶体管，包括该场效应晶体管的逻辑电路及其制造方法。 场效应晶体管可以包括双极层，其包括源极区域，漏极区域和源极区域和漏极区域之间的沟道区域，其中源区域，漏极区域和沟道区域可以形成在 单片结构，沟道区上的栅极电极以及将栅电极与双极层分离的绝缘层，其中源极区和漏极区的宽度大于第二方向上的沟道区的宽度，该第二方向跨越第一 源极区域和漏极区域彼此连接的方向。

    Quantum interference transistors and methods of manufacturing and operating the same
    47.
    发明申请
    Quantum interference transistors and methods of manufacturing and operating the same 有权
    量子干涉晶体管及其制造和操作方法

    公开(公告)号：US20100090759A1

    公开(公告)日：2010-04-15

    申请号：US12585724

    申请日：2009-09-23

    申请人： Jai-kwang Shin ,  Sun-ae Seo ,  Jong-seob Kim ,  Ki-ha Hong ,  Hyun-jong Chung

    发明人： Jai-kwang Shin ,  Sun-ae Seo ,  Jong-seob Kim ,  Ki-ha Hong ,  Hyun-jong Chung

    IPC分类号： H03H11/24 ,  H01L29/66 ,  H01L21/336

    CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/1029 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/66977

    摘要： A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.

    摘要翻译： 量子干涉晶体管可以包括源极; 排水 在源极和漏极之间的N沟道（N≥2），源极和漏极之间具有N-1个路径差; 以及设置在所述N个通道中的一个或多个的至少一个门。 N个通道中的一个或多个可以形成在石墨烯片中。 制造量子干涉晶体管的方法可以包括使用石墨烯片形成N个通道中的一个或多个。 操作量子干涉晶体管的方法可以包括向至少一个栅极施加电压。 电压可以使通过通道的电子的波的相位偏移至设置至少一个栅极的通道。

    Oscillators and methods of operating the same
    49.
    发明授权
    Oscillators and methods of operating the same 有权
    振荡器和操作方法相同

    公开(公告)号：US08421545B2

    公开(公告)日：2013-04-16

    申请号：US13099684

    申请日：2011-05-03

    申请人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    发明人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    IPC分类号： H03L7/26 ,  H03B28/00 ,  H01L29/82

    CPC分类号： H03B15/006

    摘要： Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

    摘要翻译： 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。