公开(公告)号：US20080299687A1

公开(公告)日：2008-12-04

申请号：US12180312

申请日：2008-07-25

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US07115909B2

公开(公告)日：2006-10-03

申请号：US10940748

申请日：2004-09-15

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L29/10 ,  H01L27/15

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

公开(公告)号：US20060109881A1

公开(公告)日：2006-05-25

申请号：US11221872

申请日：2005-09-09

申请人： Joon-seop Kwak ,  Kwang-ki Choi ,  Kyoung-ho Ha ,  Yeon-hee Kim ,  Jong-in Shim

发明人： Joon-seop Kwak ,  Kwang-ki Choi ,  Kyoung-ho Ha ,  Yeon-hee Kim ,  Jong-in Shim

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S5/2202

摘要： A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.

摘要翻译： 提供半导体激光二极管及其制造方法。 半导体激光二极管包括：基板; 形成在所述基板上的预定化合物半导体层; 形成在所述化合物半导体层上的下包层; 形成在下包层上的有源层; 在所述有源层上形成有在其中间形成有脊的上包层; 沟槽形成在脊的至少一侧上的预定深度，以从上包层穿透有源层; 形成在上包层的表面以外的电流阻挡层，除了脊的上表面和沟槽的内壁之外; 形成在所述脊的顶表面上的接触层; 以及形成在接触层和电流阻挡层的顶表面上的第一电极。

公开(公告)号：US20050180475A1

公开(公告)日：2005-08-18

申请号：US11061541

申请日：2005-02-18

申请人： Kyoung-ho Ha ,  Joon-seop Kwak ,  Sung-nam Lee ,  Jung-hye Chae

发明人： Kyoung-ho Ha ,  Joon-seop Kwak ,  Sung-nam Lee ,  Jung-hye Chae

IPC分类号： H01S5/20 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/32341 ,  H01S2301/173

摘要： The provided semiconductor laser device includes a substrate, an active layer, a first cladding layer located between the active layer and the substrate, a second cladding layer located on the active layer, and a first electrode layer including a metal waveguide layer, which is formed of a metal having a smaller refractive index than the second cladding layer, and formed on the second cladding layer, wherein the first electrode layer is formed to operate as a waveguide.

摘要翻译： 所提供的半导体激光器件包括衬底，有源层，位于有源层和衬底之间的第一覆层，位于有源层上的第二覆层，以及形成有金属波导层的第一电极层 的折射率小于第二包覆层的金属，并形成在第二包覆层上，其中第一电极层形成为作为波导进行工作。

公开(公告)号：US20050167681A1

公开(公告)日：2005-08-04

申请号：US10978811

申请日：2004-11-02

申请人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

发明人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L29/15

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.

摘要翻译： 提供电极层，包括电极层的发光器件和形成电极层的方法。 电极层包括依次堆叠的第一电极层和第二电极层，第一电极层由添加元素添加的氧化铟形成。 此外，添加元素包括选自Mg，Ag，Zn，Sc，Hf，Zr，Te，Se，Ta，W，Nb，Cu，Si，Ni，Co，Mo，Cr，Mn中的至少一种 ，Hg，Pr和La。

公开(公告)号：US20050145876A1

公开(公告)日：2005-07-07

申请号：US10979240

申请日：2004-11-03

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/32 ,  H01L33/42 ,  H01L29/24

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US08536604B2

公开(公告)日：2013-09-17

申请号：US13188297

申请日：2011-07-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

公开(公告)号：US07960746B2

公开(公告)日：2011-06-14

申请号：US10979240

申请日：2004-11-03

申请人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

发明人： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L23/48 ,  H01L23/52 ,  H01L23/40 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

摘要翻译： 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US20070235814A1

公开(公告)日：2007-10-11

申请号：US11654602

申请日：2007-01-18

申请人： Jae-hee Cho ,  Joon-seop Kwak

发明人： Jae-hee Cho ,  Joon-seop Kwak

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： A GaN-based semiconductor light-emitting device is provided having an improved structure in which the optical output and luminous efficiency are improved. The GaN-based semiconductor light-emitting device includes an n-electrode, a p-electrode, and an n-type semiconductor layer, an active layer and a p-type semiconductor layer, which are disposed between the n-electrode and the p-electrode, wherein the p-electrode includes a first electrode layer formed of Zn or a Zn-based alloy on the p-type semiconductor layer, a second electrode layer formed of Ag or an Ag-based alloy on the first electrode layer, and a third electrode layer formed of a transparent conductive oxide on the second electrode layer.

摘要翻译： 提供了一种具有提高光输出和发光效率的改进结构的GaN基半导体发光器件。 GaN基半导体发光器件包括设置在n电极和p电极之间的n电极，p电极和n型半导体层，有源层和p型半导体层 - 电极，其中所述p电极包括在所述p型半导体层上由Zn或Zn基合金形成的第一电极层，在所述第一电极层上由Ag或Ag基合金形成的第二电极层，以及 由第二电极层上的透明导电氧化物形成的第三电极层。

公开(公告)号：US20060281209A1

公开(公告)日：2006-12-14

申请号：US11506837

申请日：2006-08-21

申请人： Joon-seop Kwak ,  Jae-hee Cho

发明人： Joon-seop Kwak ,  Jae-hee Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.