摘要:
A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.
摘要:
A semiconductor memory device having MIS transistors to constitute memory cells (MC), each of the MIS transistors including a semiconductor layer (12), a source region (15) formed in the semiconductor layer, a drain region (14) formed apart from the source region in the semiconductor layer, the semiconductor layer between the source region and the drain region serving as a channel body in a floating state, a main gate (13) provided between the source region and the drain region to form a channel in the channel body; and an auxiliary gate (20) provided separately from the main gate to control a potential of the channel body by capacitive coupling, the auxiliary gate being driven in synchronization with the main gate. The MIS transistor has a first data state in which the channel body is set at a first potential and a second data state in which the channel body is set at a second potential.
摘要:
An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer deposited over an electron source layer formed over an ohmic electrode; and a metal thin film electrode deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
摘要:
A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.
摘要:
Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.
摘要:
A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.
摘要:
A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.
摘要:
In a removable disk storage apparatus, a reading/writing head can be stably and reliably moved so as to correspond to an information recording medium. A rotation supporting member for supporting the reading/writing head is formed of a rotary arm and an elastic supporting member fitted to a tip end portion of the rotary arm for supporting the reading/writing head. The rotary arm member is formed by bending it so that it should be dogleg-shaped. The elastic supporting body is fixed on a tip end portion of a bent portion thereof in the extended direction in which the elastic supporting body is bent. The rotary arm is inserted into a disk cartridge substantially straight with its tip end being faced to the disk cartridge, and then supported by a ramp on a center line thereof.
摘要:
A door 20 is rotatably attached to a disk cartridge 1. In mounting the disk cartridge 1, an opening and closing pin 224 moving along a groove 223 is engaged with the door 20 and the door 20 is opened. For example, when the opening and closing pin 224 cannot return to a normal standby position by some cause, a front face of the door 20 and a projected streak portion 206 are brought into contact with each other and the disk cartridge 1 cannot be inserted further. Therefore, even when the disk cartridge 1 is inserted in a state where the door 20 is not opened, there is avoided beforehand an accident where the disk cartridge 1 collides with a head, a lamp or the like to cause the destruction thereof.
摘要:
The present invention relates to a FIFO (First In First Out) memory control circuit for controlling FIFO memory which is used in various electronic devices. Specifically, the present invention relates to a FIFO memory control circuit capable of performing asynchronous read/write control hen a write clock and a read clock are different and it is known or determined which of these clocks has a higher clock frequency.