公开(公告)号：US20120120119A1

公开(公告)日：2012-05-17

申请号：US13200987

申请日：2011-10-06

申请人： Gyung-Soon Park ,  Sung-Ho Cho ,  Seung-Jae Lee ,  Jae-Min Shin

发明人： Gyung-Soon Park ,  Sung-Ho Cho ,  Seung-Jae Lee ,  Jae-Min Shin

IPC分类号： G09G3/36 ,  G09G5/02

CPC分类号： G09G3/2003 ,  G02F1/133371 ,  G02F1/133514 ,  G02F2201/52 ,  G09G2300/0452 ,  G09G2340/06

摘要： A display apparatus includes a first substrate and a second substrate opposite to the first substrate. The first substrate includes a plurality of color pixels and a white pixel that outputs a second white light having a same gray scale as a first white light formed by mixing light outputted from the plurality of color pixel. The white pixel is activated by a second current that is lower than a first current that activates the color pixels.

摘要翻译： 显示装置包括第一基板和与第一基板相对的第二基板。 第一基板包括多个彩色像素和输出与通过混合从多个彩色像素输出的光而形成的第一白光具有相同灰度的第二白光的白色像素。 白色像素被低于激活彩色像素的第一电流的第二电流激活。

公开(公告)号：US08178424B2

公开(公告)日：2012-05-15

申请号：US12590526

申请日：2009-11-10

申请人： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

发明人： Yu-Sik Kim ,  Seong-Deok Hwang ,  Seung-Jae Lee ,  Sun-Pil Youn

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L24/32 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/22 ,  H01L33/50 ,  H01L2224/06102 ,  H01L2224/13 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00011 ,  H01L2224/45099

摘要： Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.

摘要翻译： 提供了一种制造具有改进的光提取效率的发光装置的方法和使用该方法制造的发光装置。 该方法包括：制备单晶衬底; 在所述基板上形成中间结构，所述中间结构包括发光结构，所述发光结构包括依次堆叠的第一导电类型的第一导电图案，发光图案和第二导电类型的第二导电图案，第一导电图案 电连接到第一导电图案的电极和与第二导电图案电连接的第二电极; 通过在水平方向上将激光束照射到基板上，使得激光束聚焦在基板内的光束聚焦点上，形成沿水平方向延伸的多晶区域; 以及沿着多晶区沿水平方向切割基板。

公开(公告)号：US08154927B2

公开(公告)日：2012-04-10

申请号：US12868022

申请日：2010-08-25

申请人： Seung-Jae Lee ,  Dae-Seok Byeon ,  Hyun-Chul Ha

发明人： Seung-Jae Lee ,  Dae-Seok Byeon ,  Hyun-Chul Ha

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G11C16/28 ,  G11C16/0408

摘要： A nonvolatile memory device comprises a memory cell array, a row selection circuit and a voltage generator. The memory cell array comprises a first dummy memory cell, a second dummy memory cell, and a NAND string comprising a plurality of memory cells coupled in series between a string selection transistor and a ground selection transistor through the first dummy memory cell and the second dummy memory cell. During a read-out operation mode, a dummy read-out voltage is applied to a first dummy wordline coupled to the first dummy memory cell, and to a second dummy wordline coupled to the second dummy memory cell. The dummy read-out voltage has a lower magnitude than a read-out voltage applied to an unselected memory cell during the read-out operation mode.

摘要翻译： 非易失性存储器件包括存储单元阵列，行选择电路和电压发生器。 存储单元阵列包括第一虚拟存储单元，第二虚拟存储单元和NAND串，其包括通过第一虚拟存储单元和第二虚拟存储单元串联耦合在串选择晶体管和接地选择晶体管之间的多个存储单元 记忆单元 在读出操作模式期间，将虚拟读出电压施加到耦合到第一虚拟存储器单元的第一伪字线以及耦合到第二虚拟存储单元的第二虚拟字线。 在读出操作模式期间，虚拟读出电压具有比在未选择存储单元上施加的读出电压更低的量值。

公开(公告)号：US07898853B2

公开(公告)日：2011-03-01

申请号：US12204860

申请日：2008-09-05

申请人： Seung-Jae Lee ,  Dong-Ku Kang ,  Seung-Hwan Song ,  Jun-Jin Kong ,  Dong-Hyuk Chae ,  Sung-Chung Park

发明人： Seung-Jae Lee ,  Dong-Ku Kang ,  Seung-Hwan Song ,  Jun-Jin Kong ,  Dong-Hyuk Chae ,  Sung-Chung Park

IPC分类号： G11C16/04

CPC分类号： G11C11/5642 ,  G11C16/3418

摘要： Provided is a read operation for a N-bit data non-volatile memory system. The method includes determining in relation to data states of adjacent memory cells associated with a selected memory cell in the plurality of memory cells whether read data obtained from the selected memory cell requires compensation, and if the read data requires compensation, replacing the read data with compensated read data.

摘要翻译： 提供了一种用于N位数据非易失性存储器系统的读取操作。 该方法包括：确定与多个存储器单元中的所选存储单元相关联的相邻存储器单元的数据状态，从所选择的存储器单元获得的读取数据是否需要补偿，以及如果读取的数据需要补偿，则用 补偿读数据。

公开(公告)号：US07876614B2

公开(公告)日：2011-01-25

申请号：US12255211

申请日：2008-10-21

申请人： Dong-Ku Kang ,  Dong-Hyuk Chae ,  Seung-Jae Lee

发明人： Dong-Ku Kang ,  Dong-Hyuk Chae ,  Seung-Jae Lee

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C2211/5646

摘要： The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.

摘要翻译： 本发明的闪速存储器件被配置为对每个单位单元的多个位进行编程，其中根据用于编程的选择位的最前一位的程序是否被跳过来设置所选位的程序状态 跳过 因此，即使在中间位的程序被跳过的情况下也可以进行准确的编程和读取操作。

公开(公告)号：US07813187B2

公开(公告)日：2010-10-12

申请号：US11938603

申请日：2007-11-12

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： G11C7/00

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C29/00 ,  G11C2211/5621 ,  G11C2211/5642

摘要： A method for programming a flash memory device including a plurality of memory cells, each storing multi-bit data, includes reading data from selected memory cells. An error of the read data is detected and corrected. Input program data is programmed into the selected memory cells based upon the error-corrected read data.

摘要翻译： 一种用于编程包括存储多位数据的多个存储器单元的闪存器件的方法包括从所选存储单元读取数据。 检测并纠正读取数据的错误。 输入程序数据根据纠错后的读取数据编程到所选存储单元中。

公开(公告)号：US20100176415A1

公开(公告)日：2010-07-15

申请号：US12686501

申请日：2010-01-13

申请人： Seung-Jae Lee ,  Seong-Deok Hwang ,  Yu-Sik Kim ,  Sun-Pil Youn

发明人： Seung-Jae Lee ,  Seong-Deok Hwang ,  Yu-Sik Kim ,  Sun-Pil Youn

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05005 ,  H01L2224/05541

摘要： A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11.

摘要翻译： 具有高光提取效率的发光器件包括衬底和设置在衬底的一个表面上的发光结构，所述衬底具有内部重整区域，其中折射率不同于衬底的剩余部分。 重整区域的深度（基板的另一表面与重整区域之间的距离）与基板的厚度的比率在1/8和9/11之间的范围内。

公开(公告)号：US20100042836A1

公开(公告)日：2010-02-18

申请号：US12514526

申请日：2007-10-24

申请人： Min-Jung Shon ,  Sung-Mu Son ,  Seung-Jae Lee ,  Youn-Sung Chu ,  Te-Hyun Kim

发明人： Min-Jung Shon ,  Sung-Mu Son ,  Seung-Jae Lee ,  Youn-Sung Chu ,  Te-Hyun Kim

IPC分类号： H04L9/32

CPC分类号： H04L63/08 ,  H04L63/18

摘要： A secure transmission of a device management message via a broadcast (BCAST) channel, by which a BCAST server can securely transmit a device management message including an authentication value to a plurality of terminals via a one way BCAST channel, and accordingly the terminals is not required to use a separate channel for authenticating the device management message received from the BCAST server.

摘要翻译： 通过广播（BCAST）信道安全地发送设备管理消息，通过该信道，BCAST服务器可以经由单向BCAST信道将包含认证值的设备管理消息安全地发送给多个终端，因此终端不是 需要使用单独的信道来认证从BCAST服务器接收的设备管理消息。

公开(公告)号：US20090265556A1

公开(公告)日：2009-10-22

申请号：US12375500

申请日：2007-08-07

申请人： Seung-Jae Lee

发明人： Seung-Jae Lee

IPC分类号： H04L9/32 ,  G06F17/00

CPC分类号： G06F21/10 ,  G06F21/445 ,  G06F2221/2115 ,  H04L63/0869 ,  H04L63/10 ,  H04L63/12 ,  H04L2463/101

摘要： A digital Rights Management (DRM), and particularly an apparatus and method of authentication between DRM agents for moving Rights Object (RO) is provided, whereby RO and contents can be moved between DRM agents after a simple authentication therebetween using specific authentication information received from a Rights Issuer (RI), in case where the RO is moved in a user domain or among a plurality of DRM agents.

摘要翻译： 提供数字版权管理（DRM），特别是提供用于移动权限对象（RO）的DRM代理之间的认证的装置和方法，由此RO和内容可以在DRM代理之间在其之间进行简单认证之间移动，使用从 如果RO在用户域中移动或者在多个DRM代理之间移动，则权利发行者（RI）。

公开(公告)号：US20090016103A1

公开(公告)日：2009-01-15

申请号：US12169109

申请日：2008-07-08

申请人： Dong-Ku Kang ,  Seung-Jae Lee ,  Jun-Jin Kong

发明人： Dong-Ku Kang ,  Seung-Jae Lee ,  Jun-Jin Kong

IPC分类号： G11C16/04 ,  G11C16/06

CPC分类号： G11C11/5642 ,  G06F11/1068 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3418 ,  G11C2029/0411

摘要： A flash memory system includes a multi-bit flash memory device having a memory cell array including memory cells arranged in rows and columns; a read circuit configured to read data from the memory cell array; and control logic configured to control the read circuit so as to successively read data from a selected memory cell and adjacent memory cells to the selected memory cell in response to a request for a read operation with respect to MSB data stored in the selected memory cell. A compare circuit is configured to compare data read from the adjacent memory cells to the selected memory cell provided from the multi-bit flash memory device and to correct data read from the selected memory cells based upon the comparison result.

摘要翻译： 闪存系统包括具有存储单元阵列的多位闪存器件，该存储器单元阵列包括以行和列排列的存储器单元; 读取电路，被配置为从存储单元阵列读取数据; 以及控制逻辑，被配置为控制所述读取电路，以便响应于对存储在所选择的存储器单元中的MSB数据的读取操作的请求，连续地将数据从所选择的存储器单元和相邻存储器单元读取到所选择的存储器单元。 比较电路被配置为将从相邻存储器单元读取的数据与从多位闪存器件提供的所选择的存储器单元进行比较，并且基于比较结果校正从所选存储器单元读取的数据。