公开(公告)号：US20110013926A1

公开(公告)日：2011-01-20

申请号：US12922447

申请日：2009-04-28

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： G03G21/20 ,  F21V5/04 ,  F21V29/00

CPC分类号： B41J2/451

摘要： A light-emitting unit having an arrayed light source comprises a substrate; an arrayed light source group containing the arrayed light source arranged in a first direction; a lens array for focusing the light emitted from light emitting elements constituting the arrayed light source; and a lens support having a cavity formed between arrayed light source group and the lens array; the lens support having a first hole for introducing a fluid into the cavity, and a second hole for discharging the introduced fluid in a second direction crossing the first direction.

摘要翻译： 具有排列光源的发光单元包括基板; 包含沿第一方向排列的排列光源的排列光源组; 用于聚焦从构成阵列光源的发光元件发出的光的透镜阵列; 以及透镜支架，其具有形成在排列的光源组和透镜阵列之间的空腔; 所述透镜支架具有用于将流体引入所述空腔的第一孔，以及用于沿与所述第一方向交叉的第二方向排出所述引入流体的第二孔。

公开(公告)号：US20100110157A1

公开(公告)日：2010-05-06

申请号：US12611739

申请日：2009-11-03

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： B41J2/385 ,  H01L21/30 ,  H01L33/00

CPC分类号： H01L33/0079 ,  B41J2/45 ,  H01L21/6835 ,  H01L25/167 ,  H01L27/153 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.

摘要翻译： 一种方法包括：在第一基板上的第一功能区域或第二基板上的区域上布置第一接合层，通过第一接合层将第一功能区域与第二基板接合，使第一释放层进行第一处理 在第一释放层处将第一基板与第一功能区域分开，在第一基板上的第二功能区域或第三基板上的区域上布置第二接合层，将第二功能区域结合到第二或第三基板 通过第二接合层，并且使第二剥离层进行第二工序，以将第一衬底与第二剥离层处的第二功能区分离。

公开(公告)号：US20100109024A1

公开(公告)日：2010-05-06

申请号：US12611770

申请日：2009-11-03

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： H01L31/12 ,  H01L21/762 ,  H01L27/15

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0079

摘要： A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.

摘要翻译： 一种方法包括在第一基板和区域上将预定厚度的接合层布置在接合在分离层上的第一功能区域中，该第一功能区域能够在经受处理时落入可释放状态中， 第一功能区域将被转移到第二基板上; 通过所述接合层将所述第一功能区域接合到所述第二基板; 以及在所述剥离层处将所述第一衬底与所述第一功能区分离。

公开(公告)号：US07550305B2

公开(公告)日：2009-06-23

申请号：US11874452

申请日：2007-10-18

申请人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

发明人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20

摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.

摘要翻译： 本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有 其效果与回收基材的方法相同。 通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光 包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光 在第二基板上图案化成岛状的发光层。

公开(公告)号：US20090061604A1

公开(公告)日：2009-03-05

申请号：US12198838

申请日：2008-08-26

申请人： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

发明人： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

IPC分类号： H01L21/205

CPC分类号： H01L29/518 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/94

摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

摘要翻译： 锗电路型结构方便。 在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。 在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。 这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

公开(公告)号：US07495313B2

公开(公告)日：2009-02-24

申请号：US11188140

申请日：2005-07-22

申请人： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

发明人： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

IPC分类号： H01L27/082

CPC分类号： H01L29/518 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/94

摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

摘要翻译： 锗电路型结构方便。 在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。 在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。 这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

公开(公告)号：US07399693B2

公开(公告)日：2008-07-15

申请号：US10566170

申请日：2005-06-15

申请人： Yoshinobu Sekiguchi ,  Takao Yonehara ,  Makoto Koto ,  Masahiro Okuda ,  Tetsuya Shimada

发明人： Yoshinobu Sekiguchi ,  Takao Yonehara ,  Makoto Koto ,  Masahiro Okuda ,  Tetsuya Shimada

IPC分类号： H01L21/44

CPC分类号： H01L21/76251 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/0079 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/32341

摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.

摘要翻译： 本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。 本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤 层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。

公开(公告)号：US07077901B2

公开(公告)日：2006-07-18

申请号：US10402214

申请日：2003-03-31

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

IPC分类号： C30B19/02

CPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/06

摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

摘要翻译： 一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止 温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

公开(公告)号：US20060028100A1

公开(公告)日：2006-02-09

申请号：US11240524

申请日：2005-10-03

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L41/187

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

公开(公告)号：US06609446B1

公开(公告)日：2003-08-26

申请号：US09495847

申请日：2000-02-01

申请人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

发明人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

IPC分类号： B23B2710

CPC分类号： H01L21/67092 ,  H01L21/76259 ,  Y10T82/16 ,  Y10T82/16016 ,  Y10T82/16065

摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

摘要翻译： 当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔 可以防止分离的基板的周边部分的层，锯齿状缺陷。 从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将 键合衬底叠层（30）在多孔层上形成两个衬底。 当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。