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    Dielectric filter having interstage coupling using adjacent electrodes
    42.
    发明授权
    Dielectric filter having interstage coupling using adjacent electrodes 失效
    介质滤波器具有使用相邻电极的级间耦合

    公开(公告)号：US5499004A

    公开(公告)日：1996-03-12

    申请号：US202073

    申请日：1994-02-25

    申请人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Hiroshi Ohno

    发明人： Toshiharu Noguchi ,  Kazuhiro Eguchi ,  Hiroshi Ohno

    IPC分类号： H01P1/205

    CPC分类号： H01P1/2056 ,  H01P1/2053

    摘要： A dielectric filter comprises a pair of dielectric resonators 11 and 12, which have outer conductors 11c and 12c formed with cutouts 11k and 12k, respectively. Interstage coupling electrodes 11f and 12f are provided within the region of these cutouts 11k and 12k, so that the electrodes 11f and 12f do not contact with the conductors, such as outer conductors 11c, 12c and the inner conductors 11d, 12d. The dielectric resonators are connected in such a manner that these electrodes 11f and 12f are brought into contact with each other. Furthermore, input/output coupling electrodes 11g and 12g are provided within the region of the cutouts 11k and 12k. Then, by connecting the electrodes 11f and 12f, it becomes possible to provide a dielectric filter which is compact in size and capable of reducing the number of parts and, therefore, cheap in cost.

    摘要翻译： 介质滤波器包括一对介质谐振器11和12，它们分别具有形成有切口11k和12k的外导体11c和12c。 级间耦合电极11f和12f设置在这些切口11k和12k的区域内，使得电极11f和12f不与外导体11c，12c和内导体11d，12d等导体接触。 介质谐振器以使得这些电极11f和12f彼此接触的方式连接。 此外，输入/输出耦合电极11g和12g设置在切口11k和12k的区域内。 然后，通过连接电极11f和12f，可以提供尺寸紧凑并且能够减少部件数量并因此成本低廉的介质滤波器。

    High-frequency filter having increased mechanical strength
    43.
    发明授权
    High-frequency filter having increased mechanical strength 失效
    高频滤波器具有增加的机械强度

    公开(公告)号：US5276412A

    公开(公告)日：1994-01-04

    申请号：US890424

    申请日：1992-05-29

    申请人： Takehiko Yoneda ,  Kazuhiro Eguchi ,  Hiromitsu Taki

    发明人： Takehiko Yoneda ,  Kazuhiro Eguchi ,  Hiromitsu Taki

    IPC分类号： C01G25/00 ,  C04B35/48 ,  H01B3/12 ,  H01P1/205 ,  H01P7/10 ,  H01P11/00 ,  H01P1/201

    CPC分类号： H01P1/2053

    摘要： A high-frequency filter of the type having a plurality of resonators open at least at one end thereof, a dielectric board forming an input/output coupling and an interstage coupling, and a case for holding therein the resonators and the dielectric board, wherein the dielectric board is made of a ceramic having a critical stress intensity factor K.sub.1c of not less than 5 MPa.multidot.m.sup.1/2 and a dielectric dissipation factor tan. .delta. of not exceeding 1% in a working frequency band of said high-frequency filter, and wherein electrodes are provided on the dielectric board to form an input/output coupling capacity and an interstage coupling capacity. The high-frequency filter of the foregoing construction has the advantage of an excellent mechanical strength which is capable of withstanding severe mechanical loads such as falling impacts or various stresses.

    摘要翻译： 一种高频滤波器，其具有至少在其一端开放的多个谐振器，形成输入/输出耦合的介质板和级间耦合，以及用于保持谐振器和电介质板的壳体，其中， 电介质板由具有不小于5MPa * m1 / 2的临界应力强度因子K1c和介电损耗因数tan的陶瓷制成。 （delta）在所述高频滤波器的工作频带中不超过1％，并且其中电极设置在电介质板上以形成输入/输出耦合能力和级间耦合能力。 上述结构的高频过滤器具有优异的机械强度的优点，其能够承受严重的机械负载，例如落下的冲击或各种应力。

    Semiconductor apparatus and method of manufacturing the semiconductor apparatus
    46.
    发明申请
    Semiconductor apparatus and method of manufacturing the semiconductor apparatus 有权
    半导体装置及其制造方法

    公开(公告)号：US20080054378A1

    公开(公告)日：2008-03-06

    申请号：US11889278

    申请日：2007-08-10

    申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

    发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

    IPC分类号： H01L29/76

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

    摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

    摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种的膜，含有SiO 2的膜作为 主要成分为N，以SiO 2为主要成分的膜，Hf和N，以SiO 2为主要成分的膜，Zr和N，或膜 含有SiO 2作为主要成分的Hf，Zr和N.

    Semiconductor device and method of manufacturing the same
    47.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20060273413A1

    公开(公告)日：2006-12-07

    申请号：US11185678

    申请日：2005-07-21

    申请人： Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Tomohiro Saito ,  Kazuhiro Eguchi ,  Atsushi Yagishita

    发明人： Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Tomohiro Saito ,  Kazuhiro Eguchi ,  Atsushi Yagishita

    IPC分类号： H01L29/94

    CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

    摘要： There are provided: a semiconductor substrate including first and second device regions isolated by device isolation regions; a first gate insulating film of a high-k material formed in the first device region; a first gate electrode formed on the first gate insulating film; first source and drain regions formed at both sides of the first gate electrode in the first device region; a second gate insulating film of a high-k material which is different from the high-k material of the first gate insulating film, the second gate insulating film being formed in the second device region; a second gate electrode formed on the second gate insulating film; and second source and drain regions formed at both sides of the second gate electrode in the second device region.

    摘要翻译： 提供：包括由器件隔离区域隔离的第一和第二器件区域的半导体衬底; 形成在所述第一器件区域中的高k材料的第一栅极绝缘膜; 形成在第一栅极绝缘膜上的第一栅电极; 形成在第一器件区域中的第一栅电极的两侧的第一源极和漏极区; 与所述第一栅极绝缘膜的高k材料不同的高k材料的第二栅极绝缘膜，所述第二栅极绝缘膜形成在所述第二器件区域中; 形成在所述第二栅极绝缘膜上的第二栅电极; 以及形成在第二器件区域中的第二栅电极的两侧的第二源极和漏极区。

    Semiconductor device and method of fabricating the same
    50.
    发明申请
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20050236678A1

    公开(公告)日：2005-10-27

    申请号：US10962673

    申请日：2004-10-13

    申请人： Motoyuki Sato ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Akio Kaneko

    发明人： Motoyuki Sato ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Akio Kaneko

    IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/76

    CPC分类号： H01L29/518 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/78

    摘要： According to the present invention, there is provided a semiconductor device comprising: an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer; a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film; a gate electrode formed on said gate insulating film; and source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.

    摘要翻译： 根据本发明，提供了一种半导体器件，包括：界面绝缘膜，其选择性地形成在半导体衬底的预定区域上，并且具有基本上一个原子层的膜厚度; 形成在所述界面绝缘膜上并具有高于所述界面绝缘膜的介电常数的介电常数的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及源极和漏极区，形成在位于所述栅电极下方的沟道区的两侧的所述半导体衬底的表面区域中。