公开(公告)号：US06844227B2

公开(公告)日：2005-01-18

申请号：US10203891

申请日：2001-12-26

申请人： Minoru Kubo ,  Yo Ichikawa ,  Akira Asai ,  Takahiro Kawashima

发明人： Minoru Kubo ,  Yo Ichikawa ,  Akira Asai ,  Takahiro Kawashima

IPC分类号： H01L21/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/82 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/24 ,  H01L29/51 ,  H01L29/80 ,  H01L21/335 ,  H01L21/8234

CPC分类号： H01L29/518 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L21/8213 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/802

摘要： In a field effect transistor, an Si layer, an SiC (Si1-yCy) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.

摘要翻译： 在场效应晶体管中，在Si衬底上依次沉积Si层，SiC（Si1-yCy）沟道层，由氮化碳层（CN）和栅极形成的CN栅极绝缘膜。 将SiC沟道层的厚度设定为小于或等于临界厚度的值，使得根据碳含量不会发生由于应变引起的位错。 在SiC沟道层的相对侧上形成源极区域和漏极区域，在源极区域和漏极区域分别设置源电极和漏极电极。

公开(公告)号：US06836761B1

公开(公告)日：2004-12-28

申请号：US09693144

申请日：2000-10-20

申请人： Takahiro Kawashima ,  Yasuo Yoshioka ,  Pedro Cano ,  Alex Loscos ,  Xavier Serra ,  Mark Schiementz ,  Jordi Bonada

发明人： Takahiro Kawashima ,  Yasuo Yoshioka ,  Pedro Cano ,  Alex Loscos ,  Xavier Serra ,  Mark Schiementz ,  Jordi Bonada

IPC分类号： G10L1300

CPC分类号： G10L13/033 ,  G10L2021/0135

摘要： A voice converting apparatus is constructed for converting an input voice into an output voice according to a target voice. In the apparatus, a storage section provisionally stores source data, which is associated to and extracted from the target voice. An analyzing section analyzes the input voice to extract therefrom a series of input data frames representing the input voice. A producing section produces a series of target data frames representing the target voice based on the source data, while aligning the target data frames with the input data frames to secure synchronization between the target data frames and the input data frames. A synthesizing section synthesizes the output voice according to the target data frames and the input data frames.

摘要翻译： 构成语音转换装置，用于根据目标语音将输入语音转换为输出语音。 在装置中，存储部临时存储与目标语音相关联并从其中提取的源数据。 分析部分分析输入声音以从中提取代表输入声音的一系列输入数据帧。 产生部分基于源数据产生一系列表示目标语音的目标数据帧，同时使目标数据帧与输入数据帧对齐，以确保目标数据帧与输入数据帧之间的同步。 合成部根据目标数据帧和输入数据帧合成输出声音。

公开(公告)号：US09000437B2

公开(公告)日：2015-04-07

申请号：US13425879

申请日：2012-03-21

申请人： Hiroshi Hayashi ,  Takahiro Kawashima ,  Genshirou Kawachi

发明人： Hiroshi Hayashi ,  Takahiro Kawashima ,  Genshirou Kawachi

IPC分类号： H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L29/04 ,  H01L29/78669 ,  H01L29/78696

摘要： A thin-film semiconductor device according to the present disclosure includes: a substrate; a gate electrode formed above the substrate; a gate insulating film formed on the gate electrode; a channel layer that is formed of a polycrystalline semiconductor layer on the gate insulating film; an amorphous semiconductor layer formed on the channel layer and having a projecting shape in a surface; and a source electrode and a drain electrode that are formed above the amorphous semiconductor layer, and a first portion included in the amorphous semiconductor layer and located closer to the channel layer has a resistivity lower than a resistivity of a second portion included in the amorphous semiconductor layer and located closer to the source and drain electrodes.

摘要翻译： 根据本公开的薄膜半导体器件包括：衬底; 形成在所述衬底上的栅电极; 形成在栅电极上的栅极绝缘膜; 在所述栅极绝缘膜上由多晶半导体层形成的沟道层; 形成在所述沟道层上且在表面具有突出形状的非晶半导体层; 以及形成在非晶半导体层上方的源电极和漏电极，并且包括在非晶半导体层中并且位于更靠近沟道层的第一部分的电阻率低于包含在非晶半导体中的第二部分的电阻率 并且更靠近源电极和漏电极。

公开(公告)号：US08912054B2

公开(公告)日：2014-12-16

申请号：US13440320

申请日：2012-04-05

申请人： Hiroshi Hayashi ,  Takahiro Kawashima ,  Genshiro Kawashi

发明人： Hiroshi Hayashi ,  Takahiro Kawashima ,  Genshiro Kawashi

IPC分类号： H01L21/84 ,  H01L21/20 ,  H01L21/31 ,  H01L29/66

CPC分类号： H01L29/66765

摘要： A method of manufacturing a thin-film semiconductor device according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a first insulating film on the gate electrode; forming a semiconductor thin film that is to be a channel layer, on the first insulating film; forming a second insulating film on the semiconductor thin film; irradiating the second insulating film with a beam so as to increase a transmittance of the second insulating film; and forming a source electrode and a drain electrode above the channel layer.

摘要翻译： 根据本公开的制造薄膜半导体器件的方法包括：制备衬底; 在所述衬底上形成栅电极; 在栅电极上形成第一绝缘膜; 在所述第一绝缘膜上形成作为沟道层的半导体薄膜; 在所述半导体薄膜上形成第二绝缘膜; 用光束照射第二绝缘膜，以增加第二绝缘膜的透射率; 以及在沟道层上方形成源电极和漏电极。

公开(公告)号：US08766260B2

公开(公告)日：2014-07-01

申请号：US13606928

申请日：2012-09-07

申请人： Yuji Kishida ,  Takahiro Kawashima ,  Arinobu Kanegae ,  Genshirou Kawashi

发明人： Yuji Kishida ,  Takahiro Kawashima ,  Arinobu Kanegae ,  Genshirou Kawashi

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/7866

摘要： A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×1011 cm−2.

摘要翻译： 基材; 形成在所述衬底上的栅电极; 形成在栅电极上方的栅极绝缘膜; 形成在栅极绝缘膜上方的晶体硅半导体层; 形成在晶体硅半导体层上方的非晶硅半导体层; 由有机材料制成并形成在非晶硅半导体层之上的有机保护膜; 并且包括形成在插入有机保护膜的非晶硅半导体层上方的源电极和漏电极，并且非晶硅半导体层中的负载流子的电荷密度为至少3×10 11 cm -2。

公开(公告)号：US20140167165A1

公开(公告)日：2014-06-19

申请号：US14236698

申请日：2013-05-29

申请人： Yuji Kishida ,  Eiichi Satoh ,  Takahiro Kawashima

发明人： Yuji Kishida ,  Eiichi Satoh ,  Takahiro Kawashima

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/786 ,  H01L21/76829 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/66765

摘要： A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt≦0.0556θ+16.86 is satisfied where Nt (cm−3) represents a defect density of the semiconductor layer and θ (°) represents a taper angle of an edge portion of the protective layer.

摘要翻译： 薄膜晶体管包括：在基板上方的栅电极; 栅电极上方的栅极绝缘层; 与栅电极相对的半导体层，其间具有栅极绝缘层; 在所述半导体层上方的保护层，并且包含有机材料; 以及源极电极和漏极电极，每个源电极和漏电极具有位于保护层上方的至少一部分。 保护层包括具有至少部分与半导体层接触的部分的改变的层，其是通过在从源电极和漏电极露出的区域中改变保护层的表面层而产生的。 在Nt（cm-3）表示半导体层的缺陷密度和厚度的情况下，满足Log10 Nt＆nlE; 0.0556＆het; +16.86的关系式; （°）表示保护层的边缘部的锥角。

公开(公告)号：US20140054590A1

公开(公告)日：2014-02-27

申请号：US13997802

申请日：2012-10-23

申请人： Arinobu Kanegae ,  Takahiro Kawashima

发明人： Arinobu Kanegae ,  Takahiro Kawashima

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/786 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02675 ,  H01L27/3262 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78696

摘要： A thin-film semiconductor device includes: a gate electrode; a channel layer; a first amorphous semiconductor layer; a channel protective layer; a pair of second amorphous semiconductor layers formed on side surfaces of the channel layer; and a pair of contact layers which contacts the side surfaces of the channel layer via the second amorphous semiconductor layers. The gate electrode, the channel layer, the first amorphous semiconductor layer, and the channel protective layer are stacked so as to have outlines that coincide with one another in a top view. The first amorphous semiconductor layer has a density of localized states higher than those of the second amorphous semiconductor layers. The second amorphous semiconductor layers have band gaps larger than that of the first amorphous semiconductor layer.

摘要翻译： 薄膜半导体器件包括：栅电极; 一个通道层; 第一非晶半导体层; 通道保护层; 形成在所述沟道层的侧表面上的一对第二非晶半导体层; 以及一对接触层，其经由第二非晶半导体层与沟道层的侧表面接触。 堆叠栅电极，沟道层，第一非晶半导体层和沟道保护层，以便在顶视图中具有彼此一致的轮廓。 第一非晶半导体层具有比第二非晶半导体层高的局部状态密度。 第二非晶半导体层的带隙大于第一非晶半导体层的带隙。

公开(公告)号：US08510068B2

公开(公告)日：2013-08-13

申请号：US12957694

申请日：2010-12-01

申请人： Takahiro Kawashima

发明人： Takahiro Kawashima

IPC分类号： G01R35/00

CPC分类号： G08B17/107 ,  G08B29/26

摘要： Provided is a photoelectric smoke sensor capable of correcting a sensitivity according to a state of contamination. The photoelectric smoke sensor includes: a storage section (6) for storing a zero detection value VN and an initial zero detection value; a moving average value calculating section (51) for calculating a moving average value of detection AD values output from a detection portion (1, 2, 3); a zero detection value updating section (52) for calculating a new zero detection value VN when a sensitivity of the detection portion is decreased as compared with that in an initial state, and in addition, when a rate of change in the moving average value with respect to the zero detection value VN exceeds a predetermined value; a detection AD value correcting section (53) for correcting the detection value; and a smoke-density computing section (54) for converting the corrected detection value into smoke-density data.

摘要翻译： 提供一种能够根据污染状态来校正灵敏度的光电烟雾传感器。 光电烟雾传感器包括：用于存储零检测值VN和初始零检测值的存储部分（6）; 移动平均值计算部（51），用于计算从检测部（1,2,3）输出的检测AD值的移动平均值; 零检测值更新部（52），用于当检测部的灵敏度与初始状态相比降低时，计算新的零检测值VN，另外，当移动平均值的变化率与 相对于零检测值VN超过预定值; 用于校正检测值的检测用AD值校正部（53） 以及用于将校正的检测值转换为烟浓度数据的烟浓度计算部（54）。

公开(公告)号：US08279002B2

公开(公告)日：2012-10-02

申请号：US12909763

申请日：2010-10-21

申请人： Takahiro Kawashima ,  Rui Kurihara

发明人： Takahiro Kawashima ,  Rui Kurihara

IPC分类号： H03G3/20

CPC分类号： H03G1/0088 ,  G11B7/13 ,  H03F3/087 ,  H03F3/45475 ,  H03F2203/45526

摘要： A variable gain amplifier circuit includes: an operational amplifier having a non-inverting input terminal applied with a predetermined voltage; a feedback resistor having one end connected to an inverting input terminal of the operational amplifier and the other end connected to an output terminal of the operational amplifier; and a variable resistor having one end applied with an input voltage and the other end connected to the inverting input terminal of the operational amplifier.

摘要翻译： 可变增益放大器电路包括：具有施加预定电压的非反相输入端的运算放大器; 反馈电阻器，其一端连接到运算放大器的反相输入端子，另一端连接到运算放大器的输出端子; 以及可变电阻器，其一端施加有输入电压，另一端连接到运算放大器的反相输入端。

公开(公告)号：US07718995B2

公开(公告)日：2010-05-18

申请号：US11812357

申请日：2007-06-18

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/068 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/762 ,  Y10T428/2918 ,  Y10T428/2927 ,  Y10T428/2938

摘要： A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.

摘要翻译： 根据本发明的纳米线包括：由作为第一材料的晶体半导体制成的纳米线体; 以及多个微粒，其由包括半导体的构成元素的第二材料制成，并且位于纳米线体的表面的至少一部分上。 纳米线体表面光滑。