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公开(公告)号：US20050048787A1
公开(公告)日：2005-03-03
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： G03F7/11 , G03F7/40 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译： 将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。 结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。 对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原 蚀刻后的点蚀和条纹。 此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。
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公开(公告)号：US08955579B2
公开(公告)日：2015-02-17
申请号：US13091770
申请日：2011-04-21
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： F28D15/00 , F25D23/12 , F25B39/02 , H01L21/336 , H01L21/24 , H01L21/40 , C23C16/00 , H01L21/67
CPC分类号： F25B39/02 , F28F2210/02 , H01J2237/2001 , H01L21/67109
摘要： There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.
摘要翻译： 提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。 在样品台中形成圆形的制冷剂流路结构。 由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域 以使制冷剂流路结构中的制冷剂的传热系数恒定。 因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。 此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。 因此，制冷剂的传热系数可以在通道结构中均匀化。
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公开(公告)号：US20130112669A1
公开(公告)日：2013-05-09
申请号：US13354358
申请日：2012-01-20
IPC分类号： B23K9/00
CPC分类号： H01J37/32082
摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
摘要翻译： 本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。 本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。
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公开(公告)号：US20080178608A1
公开(公告)日：2008-07-31
申请号：US11676593
申请日：2007-02-20
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： F25B9/00
CPC分类号： F25B39/02 , F28F2210/02 , H01J2237/2001 , H01L21/67109
摘要： There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.
摘要翻译： 提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。 在样品台中形成圆形的制冷剂流路结构。 由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域 以使制冷剂流路结构中的制冷剂的传热系数恒定。 因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。 此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。 因此，制冷剂的传热系数可以在通道结构中均匀化。
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公开(公告)号：US20060141795A1
公开(公告)日：2006-06-29
申请号：US10531700
申请日：2002-10-18
申请人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
发明人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/461
CPC分类号： H01J37/32935 , H01J37/32091 , H01L21/31116 , H01L21/76802 , H01L22/12
摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.
摘要翻译： 本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。 在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料 气体进入真空室和高频功率引入装置6.通过气体引入装置2引入真空室的气体通过高频功率转换成等离子体，并且多个孔选择性地形成在 在等离子体气氛中的主晶片表面的氧化膜23。 在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。
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公开(公告)号：US09368377B2
公开(公告)日：2016-06-14
申请号：US11836219
申请日：2007-08-09
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32 , C23C16/46 , F25B41/06
CPC分类号： H01L21/67109 , C23C16/463 , F25B41/062 , H01J37/32431 , H01J2237/2001 , H01L21/6831 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.
摘要翻译： 本发明提供了一种用于静电吸附电极的温度控制单元，其能够在宽的温度范围内快速控制晶片温度，而不会在施加高晶片偏置功率的同时进行高热输入蚀刻的同时不影响面内均匀性。 设置在静电吸附电极中的制冷剂流路用作蒸发器。 制冷剂流路连接到压缩机，冷凝器和第一膨胀阀，以形成直接膨胀型制冷循环。 第二膨胀阀安装在静电吸附电极和压缩机之间，以调节制冷剂的流量。 这使得可以压缩静电吸附电极的制冷剂流路中的制冷剂，并且通过提高制冷剂蒸发温度将晶片温度调节到高水平。 此外，采用薄壁圆柱形制冷剂流动路径，使得薄壁圆筒仅由制冷剂压力略微变形。
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公开(公告)号：US06977229B2
公开(公告)日：2005-12-20
申请号：US10460155
申请日：2003-06-13
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/311 , H01L21/768 , H01L21/302
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31138 , H01L21/67028 , H01L21/76807 , H01L21/76814
摘要： The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
摘要翻译： 提供本发明以防止半导体器件制造工艺的干洗中的半导体器件的产量降低。 由于等离子体发生装置产生的第一气体的等离子体引起的电作用和化学作用以及由靠近主表面的平板焊接产生的高速气流的粘性摩擦力引起的物理作用 一起施加在一起以清洁晶片的主表面。 在清洁之后，将晶片暴露于相同真空室中的第二气体的等离子体，然后转移到大气中。
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公开(公告)号：US06629538B2
公开(公告)日：2003-10-07
申请号：US09811652
申请日：2001-03-20
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B1/00 , B08B1/04 , B08B5/02 , B08B7/0035 , H01L21/67028
摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.
摘要翻译： 半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。 将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。 留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。 为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。
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公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译： 可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。 当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。 循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。
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公开(公告)号：US06475918B1
公开(公告)日：2002-11-05
申请号：US09679348
申请日：2000-10-05
IPC分类号： H01L2100
CPC分类号： H01J37/32678 , H01J37/32422 , H01L21/67069 , H01L21/76802
摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要翻译： 一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或 用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制 在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。 由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。
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