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公开(公告)号：US06475918B1
公开(公告)日：2002-11-05
申请号：US09679348
申请日：2000-10-05
IPC分类号： H01L2100
CPC分类号： H01J37/32678 , H01J37/32422 , H01L21/67069 , H01L21/76802
摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要翻译： 一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或 用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制 在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。 由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。
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公开(公告)号：US06643893B2
公开(公告)日：2003-11-11
申请号：US09809202
申请日：2001-03-16
IPC分类号： B08B1100
CPC分类号： H01L21/67028 , B08B5/02 , B08B7/0035
摘要： A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.
摘要翻译： 一种干洗装置，其中衬垫朝向晶片的表面移动，清洁气体被注入到形成在衬垫和晶片之间的空间中，以沿着晶片的表面产生高速气流，从而颗粒留在 用高速气流除去晶片的表面。 此外，为了辅助这种物理清洁动作，可以使用诸如等离子体的化学或电清洁方法。
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公开(公告)号：US06629538B2
公开(公告)日：2003-10-07
申请号：US09811652
申请日：2001-03-20
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B1/00 , B08B1/04 , B08B5/02 , B08B7/0035 , H01L21/67028
摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.
摘要翻译： 半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。 将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。 留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。 为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。
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公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译： 可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。 当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。 循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。
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公开(公告)号：US06713401B2
公开(公告)日：2004-03-30
申请号：US09939770
申请日：2001-08-28
IPC分类号： H01L2100
CPC分类号： H01L21/67167 , H01J37/32192 , H01J37/3244 , H01L21/02068 , H01L21/02071 , H01L21/67028 , H01L21/67069 , H01L21/67225
摘要： Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign matter by using both an electric action of a plasma generated by plasma generation means and a physical action caused by a frictional stress of a fast gas stream formed by a pad structure which is arranged close to a wafer surface.
摘要翻译： 公开了一种半导体器件的制造方法，该半导体器件能够有效地进行半导体衬底上的处理，例如干法蚀刻，以及在处理之后除去杂质的清洗。 该方法包括通过使用由等离子体产生装置产生的等离子体的电作用和由靠近晶片的衬垫结构形成的快速气流的摩擦应力引起的物理作用来除去异物的步骤 表面。
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公开(公告)号：US06977229B2
公开(公告)日：2005-12-20
申请号：US10460155
申请日：2003-06-13
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/311 , H01L21/768 , H01L21/302
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31138 , H01L21/67028 , H01L21/76807 , H01L21/76814
摘要： The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
摘要翻译： 提供本发明以防止半导体器件制造工艺的干洗中的半导体器件的产量降低。 由于等离子体发生装置产生的第一气体的等离子体引起的电作用和化学作用以及由靠近主表面的平板焊接产生的高速气流的粘性摩擦力引起的物理作用 一起施加在一起以清洁晶片的主表面。 在清洁之后，将晶片暴露于相同真空室中的第二气体的等离子体，然后转移到大气中。
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公开(公告)号：US07372582B2
公开(公告)日：2008-05-13
申请号：US10531700
申请日：2002-10-18
申请人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
发明人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： G01B11/14
CPC分类号： H01J37/32935 , H01J37/32091 , H01L21/31116 , H01L21/76802 , H01L22/12
摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.
摘要翻译： 本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。 在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料 气体进入真空室和高频电力引入装置6。 通过气体引入装置2引入真空室的气体通过高频电力转换为等离子体，并且在等离子体气氛中的主晶片表面的氧化物膜23中选择性地形成多个孔。 在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。
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公开(公告)号：US07371690B2
公开(公告)日：2008-05-13
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译： 将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。 结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。 对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原 蚀刻后的点蚀和条纹。 此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。
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公开(公告)号：US20050048787A1
公开(公告)日：2005-03-03
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： G03F7/11 , G03F7/40 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译： 将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。 结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。 对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原 蚀刻后的点蚀和条纹。 此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。
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公开(公告)号：US20060141795A1
公开(公告)日：2006-06-29
申请号：US10531700
申请日：2002-10-18
申请人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
发明人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/461
CPC分类号： H01J37/32935 , H01J37/32091 , H01L21/31116 , H01L21/76802 , H01L22/12
摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.
摘要翻译： 本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。 在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料 气体进入真空室和高频功率引入装置6.通过气体引入装置2引入真空室的气体通过高频功率转换成等离子体，并且多个孔选择性地形成在 在等离子体气氛中的主晶片表面的氧化膜23。 在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。
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